論文

• A. Kunisaki, M. Muruganathan, H. Mizuta, T. Kodera. First-principles calculation of a negatively charged boron-vacancy center in diamond, Jpn. J. Appl. Phys., 56, 04CK02-1-4, Mar. 2017.
• Muhammad A. Rafiq, Katsunori Masubuchi, Zahid A. K. Durrani, Alan Colli, Hiroshi Mizuta, William I. Milne, Shunri Oda. High ON/OFF ratio and multimode transport in silicon nanochains field effect, Applied Physics Letters, Vol. 100, pp. 113108 (4 pages), Mar. 2012.
• Muhammad A. Rafiq, Katsunori Masubuchi, Zahid A. K. Durrani, Alan Colli, Hiroshi Mizuta, William I. Milne, Shunri Oda. Conduction Bottleneck in Silicon Nanochain Single Electron Transistors Operating at Room Temperature, Japanese Journal of Applied Physics, Vol. 51, pp. 025202 (6 pages), Feb. 2012.
• C. B. Li, K. Usami, H. Mizuta, S. Oda. Growth of Ge-Si nanowires heterostructure via chemical vapour deposition, Thin Solid Films, pp. 4174-4176, Apr. 2011.
• Jun Ogi, Thierry Ferrus, Tetsuo Kodera, Yoshishige Tsuchiya, Ken Uchida, David A. Williams, Shunri Oda, Hiroshi Mizuta. Experimental Observation of Enhanced Electron–Phonon Interaction in Suspended Si Double Quantum Dots, Japanese Journal of Applied Physics, Vol. 49, pp. 045203, 2010.
• Jun Ogi, Mohammad Adel Ghiass, Tetsuo Kodera, Yoshishige Tsuchiya, Ken Uchida, Shunri Oda, Hiroshi Mizuta. Suspended Quantum Dot Fabrication on a Heavily Doped Silicon Nanowire by Suppressing Unintentional Quantum Dot Formation, Japanese Journal of Applied Physics, Vol. 49, pp. 044001, 2010.
• G. Yamahata, T. Kodera, H. Mizuta, K. Uchida, S. Oda, H. Mizuta. Control of Inter-dot Electrostatic Coupling by a Side Gate in Silicon Double Quantum Dot Operating at 4.5 K, Appl. Phys. Express., Vol. 2, No. 9, pp. 095002, Sept. 2009.
• Hiroshi Mizuta, Mario A.G. Ramirez, Yoshishige Tsuchiya, Tasuku Nagami, Shun-ichiro Sawai, Shunri Oda, Masakuni Okamoto. MULTI-SCALE SIMULATION OF HYBRID SILICON NANO-ELECTROMECHANICAL (NEM) INFORMATION SYSTEMS, Journal of Automation, Mobile Robotics & Intelligent Systems, pp. 58-61, 2009.

著書

• Chuanbo Li, Hiroshi Mizuta, Shunri Oda. Chapter 22. Growth and Characterisation of Ge Nanowires by Chemical Vapour Deposition, Nanowires - Implementations and Applications (Edited by Abbass Hashim, InTech Press, Rijeka, Croatia), pp. 487-508, July 2011.
• SHUNRI ODA, H. Mizuta, S. Uno, N. Mori, S. Oda, N. Koshida. Electron transport in nanocrystalline silicon, Device Applications of Silicon Nanocrystals and Nanostructures (Nanostructure Science and Technology), N. Koshida ed,, Springer, pp. 197-222, 2008.

国際会議発表 (査読有り)

• J. Ogi, T. Ferrus, T. Kodera, Y. Tsuchiya, K. Uchida, D. A. Williams, S. Oda, H. Mizuta. Single-electron energy dissipation processes mediated by slab mode phonons observed for suspended silicon double quantum dots, IEEE Silicon Nanoelectronics Workshop, June 2010.
• J. Ogi, T. Ferrus, T. Kodera, Y. Tsuchiya, K. Uchida, D. A. Williams, S. Oda, H. Mizuta. Inelastic single-electron tunneling assisted by confined phonons observed for suspended silicon double quantum dots, IOP Quantum Dot Meeting (QDCAM2010), Jan. 2010.
• J. Ogi, T Ferrus, T. Kodera, Y. Tsuchiya, K. Uchida, D. A. Williams, S. Oda, Hiroshi Mizuta. Electron-phonon interaction in suspended Si double quantum dots, International Microprocesses and Nanotechnology Conference (MNC 2009), Nov. 2009.

国内会議発表 (査読なし・不明)

• 井上 顧基, 国崎 愛子, 小寺 哲夫, マノハラン ムルガナタン, 水田 博. 励起状態を考慮した第一原理計算によるダイヤモンドB-V-1センターの電子状態解析, 第78回応用物理学会秋季学術講演会, Sept. 2017.
• 永見 佑, 土屋良重, 水田 博, 内田 建, 小田俊理. エレクトロメカニカルシミュレーションによるNEMSメモリのスケーリング特性, 第57回応用物理学関係連合講演会, 17p-B-12, Mar. 2010.
• 小木 純, Thierry Ferrus, 小寺哲夫, 土屋良重, 内田 建, David Williams, 水田 博, 小田俊理. シリコン宙づり構造内の結合二重量子ドットの電子フォノン相互作用, 第57回応用物理学関係連合講演会, 20a-P14-13, Mar. 2010.

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