論文

• Trong Tue Phan, Tatsuya Shimoda, Yuzuru Takamura. A facile route enabling low-temperature PZT films using solution-combustion synthesis approach, APL Materials, American Institute of Physics, Vol. 8, 2, 021112, Feb. 2020.
• Jinwang Li, Hirokazu Tsukada, Takaaki Miyasako, Phan Trong Tue, Kazuhiro Akiyama, Hiromi Nakazawa, Yuzuru Takamura, Tadaoki Mitani, Tatsuya Shimoda. High-transconductance indium oxide transistors with a lanthanum-zirconium gate oxide characteristic of an electrolyte, Journal of Applied Physics, American Institute of Physics, Vol. 127, p. 064524, Feb. 2020.  公式リンク  
  
• P. T. Tue, Reijiro Shimura, T. Shimoda, Yuzuru Yakamura. Direct integration of piezo-actuator array with active-matrix oxide thin-film transistors using a low-temperature solution process, Sensors and Actuators A: Physical, Vol. 295, pp. 125-132, May 2019.
• Phan Trong Tue, Jinwang Li, Tatsuya Shimoda. Nano-rheology printing of sub-0.2 μm channel length oxide thin-film transistors, Nano Futures, Vol. 2, p. 035006, July 2018.
• Peixin Zhu, Jinwang Li, Phan Trong Tue, Satoshi Inoue, Tatsuya Shimoda. Hybrid cluster precursors of the LaZrO insulator for transistors: lowering the processing temperature, Scientific Reports, Nature, 8, 5934, Apr. 2018.
• Phan Trong Tue, Reijiro Shimura, Kazuhiro Fukada, Keisuke Satou, Jinwang Li, Tatsuya Shimoda, Yuzuru Takamura. EFFECT OF ULTRAVIOLET/OZONE TREATMENT ON THE STRUCTURAL AND ELECTRICAL PROPERTIES OF SOLUTION-PROCESSED PIEZOELECTRIC THICK-FILM LEAD-ZIRCONIUM-TITANATE (PZT), International Journal of Nanotechnology, Inderscience, Vol. 15, pp. 69-77, Jan. 2018.
• Phan Trong Tue, Kazuhiro Fukada, Tatsuya Shimoda. High-performance oxide thin film transistor fully fabricated by a direct rheology-imprinting, Applied Physics Letters, Vol. 111, p. 223504, Nov. 2017.
• Phan Trong Tue, Tatsuya Shimoda, Yuzuru Takamura. Lift-off process for fine-patterned PZT film using metal oxide as a sacrificial layer, Journal of Micromechanics and Microengineering, IOP, Vol. 27, p. 014004, Dec. 2016.
• Phan Trong Tue, Tatsuya Shimoda, Yuzuru Takamura. Fine-patterning of sol-gel derived PZT film by a novel lift-off process using solution-processed metal oxide as a sacrificial layer, Ceramics International, Elsevier, Vol. 42, No. 16, p. 18431, Aug. 2016.
• Phan Trong Tue, Satoshi Inoue, Yuzuru Takamura, Tatsuya Shimoda. Combustion synthesized Indium-Tin-Oxide (ITO) thin film for Source/Drain electrodes in all solution-processed oxide thin film transistors, Applied Physics A: Materials Science and Processing, Springer, Vol. 122, p. 623, June 2016.
• Satoshi Inoue, Tue Trong Phan, Tomoko Hori, Hiroaki Koyama, Tatsuya Shimoda. Electrophoretic displays driven by all-oxide thin-film transistor backplanes fabricated using a solution process, Physica Status Solidi A, Wiley, Vol. 212, p. 2133, June 2015.
• Phan Trong Tue, Takaaki Miyasako, Eisuke Tokumitsu, Tatsuya Shimoda. Effect of coercive voltage and charge injection on performance of a ferroelectric-gate thin-film transistor, Advances in Materials Science and Engineering, Vol. 2013, Dec. 2013.
• Toshihiko Kaneda, Daisuke Hirose, Takaaki Miyasako, Phan Trong Tue, Yoshitaka Murakami, Shinji Kohara, Jinwang Li, Tadaoki Mitani, Eisuke Tokumitsu, Tatsuya Shimoda. Rheology Printing for Metal-Oxide Patterns and Transistors, Journal of Materials Chemistry C, Vol. 2, pp. 40-49, Nov. 2013.
• Phan Trong Tue, Jinwang Li, Takaaki Miyasako, Satoshi Inoue, Tatsuya Shimoda. Low-temperature all solution-derived amorphous oxide thin film transistors, IEEE Transactions on Electron Devices, Vol. 34, 12, p. 1536, Nov. 2013.
• Phan Trong Tue, Takaaki Miyasako, Koichi Higashimine, Eisuke Tokumitsu, Tatsuya Shimoda. Surface‒Modified Lead‒Zirconium‒Titanate System for Solution-Processed Ferroelectric-Gate Thin-Film Transistors, Applied Physics A: Materials Science and Processing, Springer, Vol. 133, p. 333, Sept. 2013.
• Pham Van Thanh, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda. Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin Film Transistor Using ITO/PZT/Pt Structure, Ferroelectric Letters Section, Taylor & Francis, Vol. 40, p. 17, Aug. 2013.
• Huynh Thi Cam Tu, Satoshi Inoue, Phan Trong Tue, Takaaki Miyasako, Tatsuya Shimoda. Investigation of Polysilazane-Based SiO2 Gate Insulator for Oxide Semiconductor Thin-Film Transistors, IEEE Transactions on Electron Devices, IEEE, Vol. 60, p. 1149, Feb. 2013.
• Phan Trong Tue, Takaaki Miyasako, Jinwang Li, Huynh Thi Cam Tu, Satoshi Inoue, Eisuke Tokumitsu, Tatsuya Shimoda. High-Performance Solution-Processed ZrInZnO Thin-Film Transistors, IEEE Transactions on Electron Devices, IEEE, Vol. 60, No. 1, p. 320, Dec. 2012.
• Pham Van Thanh, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda. Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Stacked Gate Insulator, Japanese Journal of Applied Physics, IOP, Vol. 51, Sept. 2012.
• Takaaki Miyasako, Bui Nguyen Quoc Trinh, Masatoshi Onoue, Toshihiko Kaneda, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda. Ferroelectric-gate thin-film transistor fabricated by total solution deposition process, Japanese Journal of Applied Physics, IOP, Vol. 50, Apr. 2011.
• Phan Trong Tue, Takaaki Miyasako, Bui Nguyen Quoc Trinh, Jinwang Li, Eisuke Tokumitsu, Tatsuya Shimoda. Optimization of Pt and PZT films for Ferroelectric-Gate Thin Film Transistors, FERROELECTRICS, Taylor & Francis, Vol. 405, p. 281, Dec. 2010.
• Takaaki Miyasako, Bui Nguyen Quoc Trinh, Masatoshi Onoue, Toshihiko Kaneda, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda. Totally solution-processed ferroelectric-gate thin-film transistor, Applied Physics Letters, American Institute of Physics, Vol. 97, p. 173509, Oct. 2010.
• Jinwang Li, Hiroyuki Kameda, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Phan Trong Tue, Eisuke Tokumitsu, Tadaoki Mitani, Tatsuya Shimoda. A low-temperature crystallization path for device-quality ferroelectric films, Applied Physics Letters, American Institute of Physics, Vol. 97, p. 102905, Sept. 2010.

国際会議発表 (査読有り)

• Phan Trong Tue, Satoshi Inoue, Hiroaki Koyama, Yuzuru Takamura, Tatsuya Shimoda. All oxide all solution-processed active matrix thin-film transistor for electrophoretic display application, International Conference on Solid State Devices and Materials 2015, 332-333, Sept. 2015.
• Hiroaki Koyama, Kazuhiro Fukada, Yoshitaka Murakami, Phan Trong Tue, Shogo Tanaka, Satoshi Inoue, Tatsuya Shimoda. Oxide TFT Fabrication by Nano‐Rheology Printing for Display Application, SID 2014, Wiley, pp. 979-982, July 2014.
• Phan Trong Tue, Hiroaki Koyama, Jinwang Li, Satoshi Inoue, Tatsuya Shimoda. Development of amorphous oxide thin film transistors fabricated by a total solution process for display application, SID 2014, Wiley, pp. 1005-1008, July 2014.
• Yoshitaka Murakami, Phan Trong Tue, Hirokazu Tsukada, Jinwang Li, Tatsuya Shimoda. Preparation of Ruthernium metal and Ruthernium oxide thin films by a low-temperature solution process, The 20th International Display Workshops, pp. 1573-1576, Jan. 2013.
• Pham Van Thanh, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda. Analysis on interface layer between Pt electrode and ferroelectric layer of solution-processed PZT capacitor, MRS Spring Meeting 2011, July 2011.
• Phan Trong Tue, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Pham Van Thanh, Eisuke Tokumitsu, Tatsuya Shimoda. Lanthanum oxide capping layer for solution-processed ferroelectric-gate thin-film transistors, MRS Spring Meeting 2011, July 2011.
• Phan Trong Tue, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Eisuke Tokumitsu, Tatsuya Shimoda. Fabrication and Characterization of a Ferroelectric-Gate FET With a ITO/PZT/SRO/Pt Stacked Structure, The 22nd International Conference on Microelectronics, IEEE, pp. 32-35, Jan. 2011.

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