@inproceedings{CTT100658307,
  author = {Wei Li and 中島一裕 and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Extraction of Interface State Density of 3-dimensional Si channel},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654579,
  author = {中島一裕 and Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface state density measurements of 3D silicon channel by charge pumping method},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654580,
  author = {中島一裕 and Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface state density measurements of 3D silicon channel by charge pumping method},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654667,
  author = {中島一裕 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100654668,
  author = {中島一裕 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100657454,
  author = {Wei Li and 中島一裕 and 竇春萌 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and 片岡好則 and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Evaluation of Interfacial State Density of MOS Capacitor with Three-Dimensional Channel by Conductance Method},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657211,
  author = {中島一裕 and Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface state density measurements of 3D silicon channel by charge pumping method},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100622685,
  author = {中島一裕 and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Interface State Density Measurement of Three Dimensional Silicon Structures by Charge Pumping Method},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100616070,
  author = {中島 一裕 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {チャージポンピング法による立体Si構造の界面準位密度の評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630961,
  author = {中島一裕 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Interface state density of 3-D structured Si using charge pumping method},
  booktitle = {},
  year = 2010,
}