@article{CTT100647587, author = {H.D. Trinh and Yueh-Chin Lin and H.C. Wang and C.H. Chang and Kuniyuki KAKUSHIMA and HIROSHI IWAI and Takamasa Kawanago and Y.G. Lin and C.M. Chen and Y.Y.Wong and G.N. Huang and M. Hudait and E.Y. Chang}, title = {Effect of Postdeposition, Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors}, journal = {Applied Physics Express}, year = 2012, } @article{CTT100624981, author = {H.D. Trinh and G. Brammertz and E.Y. Chang and C.I. Kuo and C.Y. Lu and Y.C. Lin and H. Q. Nguyen and Y. Y. Wong and B.T. Tran and Kuniyuki KAKUSHIMA and HIROSHI IWAI}, title = {Electrical Characterization of Al2O3 /n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments}, journal = {IEEE ELECTRON DEVICE LETTERS}, year = 2011, }