論文

• Shinpei Hijiya, Takashi Ito, Tetsuo Nakamura. A High-Speed Write/Erase EAROM Cell, FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, Fijitsu, Vol. 20, No. 4, pp. 535-545, Dec. 1984.
• 土屋真平, 伊藤隆司, 中村哲夫. 傾斜したバンドギャップを持つ高速EAROMセル, 電子通信学会論文誌, 電子通信学会, Vol. J67-C, No. 6, pp. 505-512, June 1984.
• Shinpei Hijiya, Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa, Hideki Arakawa. A Nitride Barrier Avalanche Injection EAROM, IEEE Journal of Solid-State Circuits, IEEE Solid-State Circuits Society, Vol. SC-17, No. 5, pp. 852-856, 1982.
• Shinpei Hijiya, Takashi Ito, Masaichi Shinoda. Dual Dielectric Nonvolatile Memory Cells with Thermally Grown Silicon Nitride Films, Fujitsu Scientific and Technical Journal., Fujitsu Ltd., Vol. 16, No. 3, pp. 115-121, Sept. 1980.
• Takashi Ito, Shinpei Hijiya, Takao Nozaki, Hideki Arakawa, Masaichi Shinoda. Low Voltage Alterable EAROM Cells with Nitride-Barrier Avalanche Injection MIS(NAMIS), IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE Electron Devices Society, Vol. ED-26, No. 6, pp. 906-913, 1979.
• Takashi Ito, Shinpei Hijiya, Takao Nozaki, Hideki Arakawa, Masaichi Shinoda, Yukio Fukukawa. Very Thin Silicon Nitride Films Grown by Direct Thermal Reaction with Nitrogen, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 125, No. 3, pp. 448-452, 1979.
• Takashi Ito, Shinpei Hijiya, Hidetoshi Nishi, Masaichi Shinoda, Toshio Furuya. Interfacial Doping by Recoil Implantation for Nonvolatile Memories, Japanese Journal of Applied Physics. Supplement, The Japan Society of Applied Phisics, Vol. 17-1, pp. 201-206, 1978.

国際会議発表 (査読有り)

• Kunihiro Suzuki, Tetsu Fukano, Tatsuya Yamazaki, Shinpei Hijiya, Takashi Ito, Hajime Ishikawa. Pseudo-HBT with Polysilicon Emitter Contact and an Ultra shallow Highly Doped Base by Photoepitaxy, Tech. Dig. of, IEDM, Tech. Dig. of, IEDM, pp. 811-813, 1998.
• Yoshihiro Arimoto, Shinpei Hijiya, Takashi Ito. Advanced Bipolar and MOS Devices Based on Silicon Wafer-Bonding, Proc. 1st. Int. Symp. on Semicon. Wafer Bonding, ECS, Proc. 1st. Int. Symp. on Semicon. Wafer Bonding, ECS, pp. 414-426, 1992.
• Yasuhisa Sato, Rinshi Sugino, Masaki Okuno, Nobuo Kikuchi, Junichi Teramae, Akinao Ogawa, Shinpei Hijiya, Takashi Ito. Photo-Excited Dry Cleaning for ULSI, Proc. of VLSI Symp. on Tech. System and Application, Proc. of VLSI Symp. on Tech. System and Application, 1991.
• Shinpei Hijiya, Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa, Hideki Arakawa. A Nitride Barrier Avalanche Injection EAROM, ISSCC Dig. of Tech. Papers, ISSCC Dig. of Tech. Papers, pp. 116-117, 1982.
• Shinpei Hijiya, Takashi Ito, Tetsuo Nakamura, Nobuo Toyokura, Hajime Ishikawa. Electrically Alterable Read Only Memory Cell with Graded Energy Band-Gap Insulator, Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 590-593, 1980.
• Takashi Ito, Shinpei Hijiya, Hajime Ishikawa, Masaichi Shinoda. 0V Write/Erase EAROM Cells with Directly Nitrided Silicon Nitride Films as First Insulating Layers, Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 284-286, 1977.
• Takashi Ito, Shinpei Hijiya, Hidetoshi Nishi, Masaichi Shinoda, Toshio Furuya. Interfacial Doping by Recoil Implantation for Nonvolatile Memories, Ext. Abs. on 9th Conf: on SSDM, Ext. Abs. on 9th Conf: on SSDM, pp. 61-62, 1977.
• Takashi Ito, Takao Nozaki, Hideki Arakawa, Shinpei Hijiya, Masaichi Shinoda, Yukio Fukukawa. Thermally Nitrided Silicon Films By Direct Reaction, Abs. of 150th ECS Fall Meeting, Abs. of 150th ECS Fall Meeting, p. 310, 1976.

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