論文

• Shinpei Hijiya, Takashi Ito, Masaichi Shinoda. Dual Dielectric Nonvolatile Memory Cells with Thermally Grown Silicon Nitride Films, Fujitsu Scientific and Technical Journal., Fujitsu Ltd., Vol. 16, No. 3, pp. 115-121, Sept. 1980.
• Takashi Ito, Shinpei Hijiya, Takao Nozaki, Hideki Arakawa, Masaichi Shinoda. Low Voltage Alterable EAROM Cells with Nitride-Barrier Avalanche Injection MIS(NAMIS), IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE Electron Devices Society, Vol. ED-26, No. 6, pp. 906-913, 1979.
• Takashi Ito, Shinpei Hijiya, Takao Nozaki, Hideki Arakawa, Masaichi Shinoda, Yukio Fukukawa. Very Thin Silicon Nitride Films Grown by Direct Thermal Reaction with Nitrogen, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 125, No. 3, pp. 448-452, 1979.
• Takashi Ito, Shinpei Hijiya, Hidetoshi Nishi, Masaichi Shinoda, Toshio Furuya. Interfacial Doping by Recoil Implantation for Nonvolatile Memories, Japanese Journal of Applied Physics. Supplement, The Japan Society of Applied Phisics, Vol. 17-1, pp. 201-206, 1978.
• Takashi Ito, Takao Nozaki, Hideki Arakawa, Masaichi Shinoda. Thermally Grown Silicon Nitride Films for High Performance MNS Devices, Applied Phisics Letters, American Institute of Physics, Vol. 32, No. 5, pp. 330-331, 1978.

国際会議発表 (査読有り)

• Takashi Ito, Shinpei Hijiya, Hidetoshi Nishi, Masaichi Shinoda, Toshio Furuya. Interfacial Doping by Recoil Implantation for Nonvolatile Memories, Ext. Abs. on 9th Conf: on SSDM, Ext. Abs. on 9th Conf: on SSDM, pp. 61-62, 1977.
• Takashi Ito, Shinpei Hijiya, Hajime Ishikawa, Masaichi Shinoda. 0V Write/Erase EAROM Cells with Directly Nitrided Silicon Nitride Films as First Insulating Layers, Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 284-286, 1977.
• Takashi Ito, Takao Nozaki, Hideki Arakawa, Shinpei Hijiya, Masaichi Shinoda, Yukio Fukukawa. Thermally Nitrided Silicon Films By Direct Reaction, Abs. of 150th ECS Fall Meeting, Abs. of 150th ECS Fall Meeting, p. 310, 1976.

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