論文

• Takashi Ito, Hajime Ishikawa, Yukio Fukukawa. Thermal Nitridation of Silicon in Advanced LSI Processing, Japanese Journal of Applied Physics. Supplement, The Japan Society of Applied Phisics, Vol. 20-1, pp. 33-38, 1980.
• Takashi Ito, Shinpei Hijiya, Takao Nozaki, Hideki Arakawa, Masaichi Shinoda, Yukio Fukukawa. Very Thin Silicon Nitride Films Grown by Direct Thermal Reaction with Nitrogen, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 125, No. 3, pp. 448-452, 1979.

国際会議発表 (査読有り)

• Takashi Ito, Takao Nozaki, Hajime Ishikawa, Yukio Fukukawa. Thermal Nitride Gate FET Technology for VLSI Devices, ISSCC Dig. of Tech. Papers, ISSCC Dig. of Tech. Papers, pp. 73-74, 1980.
• Takashi Ito, Hajime Ishikawa, Yukio Fukukawa. Thermal Nitridation of Silicon in Advanced LSI Processing, Ext. Abs. on 12th Conf. on SSDM, Ext. Abs. on 12th Conf. on SSDM, pp. 9-10, 1980.
• Takashi Ito, Takao Nozaki, Hideki Arakawa, Shinpei Hijiya, Masaichi Shinoda, Yukio Fukukawa. Thermally Nitrided Silicon Films By Direct Reaction, Abs. of 150th ECS Fall Meeting, Abs. of 150th ECS Fall Meeting, p. 310, 1976.

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