@article{CTT100634524,
  author = {Shinpei Hijiya and Takashi Ito and Tetsuo Nakamura},
  title = {A High-Speed Write/Erase EAROM Cell},
  journal = {FUJITSU SCIENTIFIC & TECHNICAL JOURNAL},
  year = 1984,
}

@article{CTT100634522,
  author = {Ichiro Kato and Takashi Ito and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Characteristics of Thermally Nitrided Silicon Dioxide Film and Plasma Enhancement},
  journal = {Journal of Electronic Materials},
  year = 1984,
}

@article{CTT100634525,
  author = {土屋真平 and 伊藤隆司 and 中村哲夫},
  title = {傾斜したバンドギャップを持つ高速EAROMセル},
  journal = {電子通信学会論文誌},
  year = 1984,
}

@article{CTT100634519,
  author = {Takashi Ito and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Advantages of Thermal Nitride and Nirtoxide Gate Films in VLSI Process},
  journal = {IEEE Transactions on Electron Devices},
  year = 1982,
}

@article{CTT100634518,
  author = {Takashi Ito and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Effect of Thermally Nitrided SiO2 (Nirtoxide) on MOS Charactristics},
  journal = {Journal of The Electrochemical Society},
  year = 1982,
}

@article{CTT100634515,
  author = {Ichiro Kato and Takashi Ito and Shnichi Inoue and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Ammonia Annealed SiO2 Films for Thin Gate Insulators},
  journal = {Japanese Journal of Applied Physics. Supplement},
  year = 1982,
}

@article{CTT100634517,
  author = {Shinpei Hijiya and Takashi Ito and Tetsuo Nakamura and Hajime Ishikawa and Hideki Arakawa},
  title = {A Nitride Barrier Avalanche Injection EAROM},
  journal = {IEEE Journal of Solid-State Circuits},
  year = 1982,
}

@article{CTT100634514,
  author = {Takashi Ito and Ichiro Kato and Takao Nozak and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Plasma enhanced Thermal Nitridation of Silicon},
  journal = {Applied Phisics Letters},
  year = 1981,
}

@inproceedings{CTT100634608,
  author = {Ichiro Kato and Takashi Ito and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Plasma Nitrided Silicon Dioxide Film for VLSI Gate Dielectrics},
  booktitle = {Elec. Mat. Conf.},
  year = 1983,
}

@inproceedings{CTT100634609,
  author = {Takashi Kato and Takashi Ito and Masao Taguchi and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Interfacial Oxidation of Ta205-Si Systems for High Density DRAM},
  booktitle = {Dig. of Tech. Papers on 1983 Symp. on VLSI Tech.},
  year = 1983,
}

@inproceedings{CTT100634606,
  author = {Takashi Ito and Ichiro Kato and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Thermal Nitride Thin Films for VLSI Circuits},
  booktitle = {Proc. of Symp. on Silicon Nitride Thin Insulating Films, ECS},
  year = 1983,
}

@inproceedings{CTT100634605,
  author = {Takashi Ito and Toshihiko Sugii and Tetsuo Nakamura},
  title = {Aluminum Plasma CVD for VLSI Circuit Inter-connections},
  booktitle = {Dig. of Tech. Papers on 1982 Symp. on VLSI Tech.},
  year = 1982,
}

@inproceedings{CTT100634604,
  author = {Shinpei Hijiya and Takashi Ito and Tetsuo Nakamura and Hajime Ishikawa and Hideki Arakawa},
  title = {A Nitride Barrier Avalanche Injection EAROM},
  booktitle = {ISSCC Dig. of Tech. Papers},
  year = 1982,
}

@inproceedings{CTT100634601,
  author = {Ichiro Kato and Takashi Ito and Shinichi Inoue and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Ammonia Annealed SiO2. Films for Thin Gate Insulators},
  booktitle = {Ext. Abs. on 13th Conf. on SSDM},
  year = 1981,
}

@inproceedings{CTT100634602,
  author = {Masao Taguchi and Takashi Ito and Tetsu Fukano and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Thermal Nitride Capacitors for High Density RAMs},
  booktitle = {Tech. Dig. of IEDM},
  year = 1981,
}

@inproceedings{CTT100634603,
  author = {Takashi Ito and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Thin Gate Insulators for VLSI},
  booktitle = {Dig. of Tech. Papers on 1981 Symp. on VLSI Tech.},
  year = 1981,
}

@inproceedings{CTT100634600,
  author = {Shinpei Hijiya and Takashi Ito and Tetsuo Nakamura and Nobuo Toyokura and Hajime Ishikawa},
  title = {Electrically Alterable Read Only Memory Cell with Graded Energy Band-Gap Insulator},
  booktitle = {Tech. Dig. of IEDM},
  year = 1980,
}