論文

• Shinpei Hijiya, Takashi Ito, Tetsuo Nakamura. A High-Speed Write/Erase EAROM Cell, FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, Fijitsu, Vol. 20, No. 4, pp. 535-545, Dec. 1984.
• Ichiro Kato, Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa. Characteristics of Thermally Nitrided Silicon Dioxide Film and Plasma Enhancement, Journal of Electronic Materials, Springer, Vol. 13, No. 6, pp. 913-929, Aug. 1984.
• 土屋真平, 伊藤隆司, 中村哲夫. 傾斜したバンドギャップを持つ高速EAROMセル, 電子通信学会論文誌, 電子通信学会, Vol. J67-C, No. 6, pp. 505-512, June 1984.
• Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa. Advantages of Thermal Nitride and Nirtoxide Gate Films in VLSI Process, IEEE Transactions on Electron Devices, IEEE Electron Devices Society, Vol. ED-29, No. 4, pp. 498-502, Apr. 1982.
• Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa. Effect of Thermally Nitrided SiO2 (Nirtoxide) on MOS Charactristics, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 129, No. 1, pp. 184-188, 1982.
• Ichiro Kato, Takashi Ito, Shnichi Inoue, Tetsuo Nakamura, Hajime Ishikawa. Ammonia Annealed SiO2 Films for Thin Gate Insulators, Japanese Journal of Applied Physics. Supplement, The Japan Society of Applied Phisics, Vol. 21-1, pp. 153-158, 1982.
• Shinpei Hijiya, Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa, Hideki Arakawa. A Nitride Barrier Avalanche Injection EAROM, IEEE Journal of Solid-State Circuits, IEEE Solid-State Circuits Society, Vol. SC-17, No. 5, pp. 852-856, 1982.
• Takashi Ito, Ichiro Kato, Takao Nozak, Tetsuo Nakamura, Hajime Ishikawa. Plasma enhanced Thermal Nitridation of Silicon, Applied Phisics Letters, American Institute of Physics, Vol. 38, No. 5, pp. 370-372, 1981.

国際会議発表 (査読有り)

• Ichiro Kato, Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa. Plasma Nitrided Silicon Dioxide Film for VLSI Gate Dielectrics, Elec. Mat. Conf., Elec. Mat. Conf., Vol. 6, No. 13, pp. 913-929, 1983.
• Takashi Kato, Takashi Ito, Masao Taguchi, Tetsuo Nakamura, Hajime Ishikawa. Interfacial Oxidation of Ta205-Si Systems for High Density DRAM, Dig. of Tech. Papers on 1983 Symp. on VLSI Tech., Dig. of Tech. Papers on 1983 Symp. on VLSI Tech., pp. 86-87, 1983.
• Takashi Ito, Ichiro Kato, Tetsuo Nakamura, Hajime Ishikawa. Thermal Nitride Thin Films for VLSI Circuits, Proc. of Symp. on Silicon Nitride Thin Insulating Films, ECS, Proc. of Symp. on Silicon Nitride Thin Insulating Films, ECS, pp. 295-301, 1983.
• Takashi Ito, Toshihiko Sugii, Tetsuo Nakamura. Aluminum Plasma CVD for VLSI Circuit Inter-connections, Dig. of Tech. Papers on 1982 Symp. on VLSI Tech., Dig. of Tech. Papers on 1982 Symp. on VLSI Tech., pp. 20-21, 1982.
• Shinpei Hijiya, Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa, Hideki Arakawa. A Nitride Barrier Avalanche Injection EAROM, ISSCC Dig. of Tech. Papers, ISSCC Dig. of Tech. Papers, pp. 116-117, 1982.
• Ichiro Kato, Takashi Ito, Shinichi Inoue, Tetsuo Nakamura, Hajime Ishikawa. Ammonia Annealed SiO2. Films for Thin Gate Insulators, Ext. Abs. on 13th Conf. on SSDM, Ext. Abs. on 13th Conf. on SSDM, pp. 73-74, 1981.
• Masao Taguchi, Takashi Ito, Tetsu Fukano, Tetsuo Nakamura, Hajime Ishikawa. Thermal Nitride Capacitors for High Density RAMs, Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 400-403, 1981.
• Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa. Thin Gate Insulators for VLSI, Dig. of Tech. Papers on 1981 Symp. on VLSI Tech., Dig. of Tech. Papers on 1981 Symp. on VLSI Tech., pp. 72-73, 1981.
• Shinpei Hijiya, Takashi Ito, Tetsuo Nakamura, Nobuo Toyokura, Hajime Ishikawa. Electrically Alterable Read Only Memory Cell with Graded Energy Band-Gap Insulator, Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 590-593, 1980.

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