@article{CTT100634579,
  author = {Takayuki Aoyama and Kunihiro Suzuki and Hiroko Tashiro and Yoko Toda and Tatsuya Yamazaki and Kanetake Takasaki and Takashi Ito},
  title = {Effect of Fluorine on Boron Diffusion in Thin Silicon Dioxides and Oxynitride},
  journal = {Journal of Applied Physics},
  year = 1994,
}

@article{CTT100634578,
  author = {Kenichi Goto and Tatsuya Yamazaki and Yasuo Nara and Tetsu Fukano and Toshihiro Sugii and Yoshihiro Arimoto and Takashi Ito},
  title = {Ti Salicide Process for Sub-quarter-Micron CMOS Devices},
  journal = {IEICE TRANSACTIONS on Electronics},
  year = 1994,
}

@article{CTT100634574,
  author = {Takayuki Aoyama and Kunihiro Suzuki and Hiroko Tashiro and Tatsuya Yamazaki and Yoshihiro Arimoto and Takashi Ito},
  title = {Boron Diffusion Through Pure Silicon Oxide and Oxynitride for Metal-Oxide-Semiconductor Devices},
  journal = {Journal of The Electrochemical Society},
  year = 1993,
}

@article{CTT100634571,
  author = {Takayuki Aoyama and Tatsuya Yamazaki and Takashi Ito},
  title = {Silicon Surface Cleaning Using Photoexcited Fluorine Gas Diluted with Hydrogen},
  journal = {Journal of The Electrochemical Society},
  year = 1993,
}

@article{CTT100634573,
  author = {Manabu Kojima and Atsushi Fukuroda and Tetsu Fukano and Naoshi Higaki and Tatsuya Yamazaki and Toshihiro Sugii and Yoshihiro Arimoto and Takashi Ito},
  title = {High-Speed SOI Bipolar Transistors Using Bonding and Thinning Techniques},
  journal = {IEICE TRANSACTIONS on Electronics},
  year = 1993,
}

@article{CTT100634569,
  author = {Takayuki Aoyama and Tatsuya Yamazaki and Takashi Ito},
  title = {Surface Cleaning for Si Epitaxy Using Photoexcited Fluorine Gas},
  journal = {Journal of The Electrochemical Society},
  year = 1993,
}

@article{CTT100634567,
  author = {Norio Miyata and Tatsuya Yamazaki and Yoshihiro Arimoto and Takashi Ito},
  title = {Intermittent Ultraviolet lrradiation for Silicon Selective Epitaxial Growth},
  journal = {Applied Phisics Letters},
  year = 1992,
}

@article{CTT100634558,
  author = {Takayuki Aoyama and Tatsuya Yamazaki and Takashi Ito},
  title = {Nonuniformities of Native Oxide on Si(001) Surfaces Formed during Wet Chemical Cleaning},
  journal = {Applied Phisics Letters},
  year = 1992,
}

@article{CTT100634566,
  author = {Toshihiro Sugii and Tatsuya Yamazaki and Yoshihiro Arimoto and Takashi Ito and Yuji Furumura and Ikuo.Namura and Hiroshi Goto and Toshiya Tahara},
  title = {SiC Growth and its Application  to High Speed Si-HBTs},
  journal = {Microelectronic Engineering},
  year = 1992,
}

@article{CTT100634557,
  author = {Tatsuya Yamazaki and Takashi Ito},
  title = {Photoexcited Processes for Semiconductor Low Temperature Epitaxy},
  journal = {FUJITSU SCIENTIFIC & TECHNICAL JOURNAL},
  year = 1991,
}

@article{CTT100634548,
  author = {Takayuki Aoyama and Tatsuya Yamazaki and Takashi Ito},
  title = {Removing Native Oxide from Si (001) Surfaces using Photoexcited Fluorine Gas},
  journal = {Applied Phisics Letters},
  year = 1991,
}

@article{CTT100634549,
  author = {Toshihiro Sugii and Tatsuya Yamazaki and Takashi Ito},
  title = {Achieving High Current Gain and Low Emitter Resistance with the SiCx:F Widegap Emitter},
  journal = {Japanese Journal of Applied Physics},
  year = 1991,
}

@article{CTT100634552,
  author = {伊藤隆司 and 山崎辰也},
  title = {光励起プロセスを用いたSiの低温エピタキシー},
  journal = {精密工学会誌},
  year = 1991,
}

@article{CTT100634546,
  author = {Toshihiro Sugii and Tatsuya Yamazaki and Takashi Ito},
  title = {Si Hetero-Bipolar Transistor with a Fluorine Doped SiC Emitter and a Thin, Highly-Doped Epitaxial Base},
  journal = {IEEE Transactions on Electron Devices},
  year = 1990,
}

@article{CTT100634545,
  author = {Tatsuya Yamazaki and Hiroshi Minakata and Takashi Ito},
  title = {Continuous Growth of Low-Temperature Si Epitaxial Layer with Heavily Phosphorous and Boron Doping Using Photoepitaxy},
  journal = {Journal of The Electrochemical Society},
  year = 1990,
}

@article{CTT100634561,
  author = {Tatsuya Yamazaki and Norio Miyata and Takayuki Aoyama and Takashi Ito},
  title = {Investigation of Thermal Removal of Native Oxide from Si (100) Surfaces in Hydrogen for Low-Temperature Si CVD Epitaxy},
  journal = {Journal of The Electrochemical Society},
  year = 1990,
}

@article{CTT100634544,
  author = {Tatsuya Yamazaki and Satoru Watanabe and Takashi Ito},
  title = {Heavy Boron Doping in Low Temperature Si Photoepitaxy},
  journal = {Journal of The Electrochemical Society},
  year = 1990,
}

@article{CTT100634538,
  author = {Tatsuya Yamazaki and Hiroshi Minakata and Takashi Ito},
  title = {Continuous Growth of Heavily Doped p+-n+ Si Epitaxial Layer Using Low-Temperature Photoepitaxy},
  journal = {Applied Physics Letters},
  year = 1989,
}

@article{CTT100634541,
  author = {Satoru Watanabe and Rinshi Sugino and Tatsuya Yamazaki and Yasuo Nara and Takashi Ito},
  title = {Wafer Cleaning with Photoexcited Chlorine and Thermal Treatment for High-Quality Silicon Epitaxy},
  journal = {Japanese Journal of Applied Physics},
  year = 1989,
}

@article{CTT100634537,
  author = {Toshihiro Sugii and Tatsuya Yamazaki and Takashi Ito},
  title = {Improved Current Gain in Bipolar Transistor with Bandgap Narrowing in Base},
  journal = {Electronics Letters},
  year = 1989,
}

@article{CTT100634530,
  author = {Toshihiro Sugii and Tatsuya Yamazaki and Tetsu Fukano and Takashi Ito},
  title = {Epitaxially Grown Base Transistor for High-Speed Operation},
  journal = {Electron Device Letters, IEEE},
  year = 1987,
}

@inproceedings{CTT100634668,
  author = {Takashi Ito and Tatsuya Yamazaki and Satoru Watanabe and Yasuo Nara and Hajime Ishikawa},
  title = {Photoenhancement in Low-Temperature Silicon Epitaxy},
  booktitle = {Proc. Int. Symp. on Advanced Materials for ULSI, 1988 ECS Spring Meeting},
  year = 1998,
}

@inproceedings{CTT100634672,
  author = {Kunihiro Suzuki and Tetsu Fukano and Tatsuya Yamazaki and Shinpei Hijiya and Takashi Ito and Hajime Ishikawa},
  title = {Pseudo-HBT with Polysilicon Emitter Contact and an Ultra shallow Highly Doped Base by Photoepitaxy},
  booktitle = {Tech. Dig. of, IEDM},
  year = 1998,
}

@inproceedings{CTT100634716,
  author = {Takayuki Aoyama and Tatsuya Yamazaki and Takashi Ito},
  title = {Surface Cleaning for Silicon Epitaxy Using Photoexcited Fluorine Gas},
  booktitle = {Proc. of MRS Symposium},
  year = 1993,
}

@inproceedings{CTT100634725,
  author = {Tatsuya Yamazaki and Kenichi Goto and Tetsu Fukano and Yasuo Nara and Toshihiro Sugii and Takashi Ito},
  title = {2l psec Switching 0.13μm-CMOS at Room Temperature Using High Performance Co Salicide Process},
  booktitle = {IEDM Dig. of Tech.},
  year = 1993,
}

@inproceedings{CTT100634710,
  author = {Takashi Ito and Rinshi Sugino and Yasuhiro Sato and Masaki Okuno and Akira Osawa and Takayuki Aoyama and Tatsuya Yamazaki and Yoshihiro Arimoto},
  title = {Photo-Excited Cleaning of Silicon with Chlorine and Fluorine},
  booktitle = {MRS Symp. Proceeding},
  year = 1992,
}

@inproceedings{CTT100634696,
  author = {Tatsuya Yamazaki and Itaru Namura and Toshihiro Sugii and Hiroshi Goto and Akinori Tahara and Takashi Ito},
  title = {High Speed Si Hetero-Bipolar Transistor with a SiC Wide-gap Emitter and an Ultra-thin Heavily Doped Photoepitaxially Grown Base},
  booktitle = {Proc. IEEE 1991 Bipolar Circuits and Technology Meeting},
  year = 1991,
}

@inproceedings{CTT100634699,
  author = {Takashi Ito and Toshihiro Sugii and Tatsuya Yamazaki},
  title = {SiC(F) Hetero-Emitter and Epitaxial Base Bipolar Transistors},
  booktitle = {4th Int. Conf. on Amorphous and Crystalline Silicon Carbide and Other IV- IV Materials},
  year = 1991,
}

@inproceedings{CTT100634694,
  author = {Manabu Kojim and Atsushi Fukuroda and Tetsu Fukano and Naoshi Higaki and Tatsuya Yamazaki and Toshihiro Sugii and Yoshihiro Arimoto and Takashi Ito},
  title = {High-Speed Epitaxial Base Transistors on Bonded SOI},
  booktitle = {IEEE 1991 ,Bipolar Circuits and Technology Meeting},
  year = 1991,
}

@inproceedings{CTT100634690,
  author = {Atsushi Fukuroda and Toru Miyabo and Manabu Kojima and Tetsu Fukano and Naoshi Higaki and Tatsuya Yamazaki and Toshihiro Sugii and Yoshihiro Arimoto and Takashi Ito},
  title = {Wafer Bonding and Thinning for High-Speed SOI Epitaxial-Base Transistor},
  booktitle = {Ext. Abst. of Int. Conf. on SSDM},
  year = 1991,
}

@inproceedings{CTT100634687,
  author = {Toshihiro Sugii and Tatsuya Yamazaki and Takashi Ito},
  title = {Process Technologies for    Advanced Si Bipolar Devices},
  booktitle = {Ext. Abst, of Int. Conf. on SSDM},
  year = 1990,
}

@inproceedings{CTT100634686,
  author = {Tatsuya Yamazaki and Ikuo Namura and Hiroshi Goto and Atsushi Tahara and Takashi Ito},
  title = {A 11.7 GHz l/8 Divider using 43 GHz Si High Speed Bipolar Transistor with Photo-epitaxially Grown Ultra Thin Base},
  booktitle = {Tech. Digest of IEDM},
  year = 1990,
}

@inproceedings{CTT100634680,
  author = {Tatsuya Yamazaki and Hiroshi Minakata and Takashi Ito},
  title = {Abrupt and Defect-free p+-n+ Junction Formed by Low-Temperature Photo-Epitaxy with Continuous Boron and Phosphorous Doping},
  booktitle = {Ext. Abs. of 2lst Conf. on SSDM},
  year = 1989,
}

@inproceedings{CTT100634669,
  author = {Satoru Watanabe and Rinshi Sugino and Tatsuya Yamazaki and Yasuo Nara and Takashi Ito},
  title = {Wafer-Cleaning with Photo-Excited Chlorine and Thermal Treatment for High-Quality Silicon Epitaxy},
  booktitle = {Dig. of 2nd MicroProcess Conf.},
  year = 1989,
}

@inproceedings{CTT100634670,
  author = {Toshihiro Sugii and Tatsuya Yamazaki and Kunihiro Suzuki and Tetsu Fukano and Takashi Ito},
  title = {Si Hetero-Bipolar Transistor with an SiC Emitter and a Thin Epitaxial Base},
  booktitle = {Tech. Dig. of IEDM},
  year = 1989,
}

@inproceedings{CTT100634671,
  author = {Satoru Watanabe and Tatsuya Yamazaki and Takashi Ito},
  title = {Wavelength Dependence Boron Doping in Silicon Photochemical Vapor Deposition},
  booktitle = {Proc. of SPIE},
  year = 1989,
}

@inproceedings{CTT100634674,
  author = {Kunihiro Suzuki and Tetsu Fukano and Hiroshi Ishiwari and Tatsuya Yamazaki and Masao Taguchi and Takashi Ito and Hajime Ishikawa},
  title = {50nm Ultra Thin Base Silicon Bipolar. Device Fabrication Based on Photo-epitaxial Growth},
  booktitle = {Digest of Symp. on VLSI Technology},
  year = 1989,
}

@inproceedings{CTT100634667,
  author = {Satoru Watanabe and Tatsuya Yamazaki and Yasuo Nara and Takashi Ito},
  title = {Photo- Enhanced Boron Doping in Low-Temperature Silicon Epitaxy and its FTIR Study},
  booktitle = {Ext. Abs. of 20th Conf. on SSDM},
  year = 1988,
}

@inproceedings{CTT100634638,
  author = {Toshihiro Sugii and Tatsuya Yamazaki and Tetsu Fukano and Takashi Ito},
  title = {Thin-Base Bipolar Technology by Low-Temperature Photo-Epitaxy},
  booktitle = {Dig. of Symp. on VLSI Tech.},
  year = 1987,
}

@inproceedings{CTT100634656,
  author = {Takashi Ito and Rinshi Sugino and Tatsuya Yamazaki and Satoru Watanabe and Yasuo Nara},
  title = {Photochemical Cleaning of Silicon Wafers with Halogen Radicals},
  booktitle = {1987 ECS Fall Meeting},
  year = 1987,
}

@inproceedings{CTT100634635,
  author = {Rinshi Sugino and Yasuo Nara and Tatsuya Yamazaki and Satoru Watanabe and Takashi Ito},
  title = {Through-Oxide Cleaning of Silicon Surface by Photo-Excited Radicals},
  booktitle = {Ext. Abs. of 19th Conf. on SSDM},
  year = 1987,
}

@inproceedings{CTT100634634,
  author = {Tatsuya Yamazaki and Satoru Watanabe and Toshihiro Sugii and Takashi Ito},
  title = {Ultra Shallow p+ /n Junction Formed by Photo-Enhanced Low-Temperature Epitaxy},
  booktitle = {Tech. Dig. of IEDM},
  year = 1987,
}

@inproceedings{CTT100634625,
  author = {Tatsuya Yamazaki and Rinshi Sugino and Takashi Ito and Hajime Ishikawa},
  title = {Photo-Chemical Effects for Low Temperature Si Epitaxy},
  booktitle = {Ext. Abst. of 1986 Int. Conf. on SSDM},
  year = 1986,
}

@inproceedings{CTT100634613,
  author = {Tatsuya Yamazaki and Takashi Ito and Hajime Ishikawa},
  title = {Disilane Photoepitaxy for VLSI},
  booktitle = {Dig. of Tech. Papers on 1984 Symp. on VLSI Tech.},
  year = 1984,
}