@article{CTT100634578,
  author = {Kenichi Goto and Tatsuya Yamazaki and Yasuo Nara and Tetsu Fukano and Toshihiro Sugii and Yoshihiro Arimoto and Takashi Ito},
  title = {Ti Salicide Process for Sub-quarter-Micron CMOS Devices},
  journal = {IEICE TRANSACTIONS on Electronics},
  year = 1994,
}

@article{CTT100634573,
  author = {Manabu Kojima and Atsushi Fukuroda and Tetsu Fukano and Naoshi Higaki and Tatsuya Yamazaki and Toshihiro Sugii and Yoshihiro Arimoto and Takashi Ito},
  title = {High-Speed SOI Bipolar Transistors Using Bonding and Thinning Techniques},
  journal = {IEICE TRANSACTIONS on Electronics},
  year = 1993,
}

@article{CTT100634530,
  author = {Toshihiro Sugii and Tatsuya Yamazaki and Tetsu Fukano and Takashi Ito},
  title = {Epitaxially Grown Base Transistor for High-Speed Operation},
  journal = {Electron Device Letters, IEEE},
  year = 1987,
}

@article{CTT100634528,
  author = {Takashi Ito and Hiroshi Horie and Tetsu Fukano and Hajime Ishikawa},
  title = {A Nitride-Isolated Molybdenum-Polysilicon Gate Electrode for MOS VLSI Circuits},
  journal = {IEE Trans Electron Devices},
  year = 1986,
}

@inproceedings{CTT100634672,
  author = {Kunihiro Suzuki and Tetsu Fukano and Tatsuya Yamazaki and Shinpei Hijiya and Takashi Ito and Hajime Ishikawa},
  title = {Pseudo-HBT with Polysilicon Emitter Contact and an Ultra shallow Highly Doped Base by Photoepitaxy},
  booktitle = {Tech. Dig. of, IEDM},
  year = 1998,
}

@inproceedings{CTT100634725,
  author = {Tatsuya Yamazaki and Kenichi Goto and Tetsu Fukano and Yasuo Nara and Toshihiro Sugii and Takashi Ito},
  title = {2l psec Switching 0.13μm-CMOS at Room Temperature Using High Performance Co Salicide Process},
  booktitle = {IEDM Dig. of Tech.},
  year = 1993,
}

@inproceedings{CTT100634706,
  author = {Naoshi Higaki and Tetsu Fukano and Atsushi Fukuroda and Toshihiro Sugii and Yoshihiro   Arimoto and Takashi Ito},
  title = {A Thin-Base Lateral Bipolar Transistor Fabricated on   Bonded SOI},
  booktitle = {Dig. Tech. Papers of Symp. on VLSI Tech.},
  year = 1991,
}

@inproceedings{CTT100634694,
  author = {Manabu Kojim and Atsushi Fukuroda and Tetsu Fukano and Naoshi Higaki and Tatsuya Yamazaki and Toshihiro Sugii and Yoshihiro Arimoto and Takashi Ito},
  title = {High-Speed Epitaxial Base Transistors on Bonded SOI},
  booktitle = {IEEE 1991 ,Bipolar Circuits and Technology Meeting},
  year = 1991,
}

@inproceedings{CTT100634690,
  author = {Atsushi Fukuroda and Toru Miyabo and Manabu Kojima and Tetsu Fukano and Naoshi Higaki and Tatsuya Yamazaki and Toshihiro Sugii and Yoshihiro Arimoto and Takashi Ito},
  title = {Wafer Bonding and Thinning for High-Speed SOI Epitaxial-Base Transistor},
  booktitle = {Ext. Abst. of Int. Conf. on SSDM},
  year = 1991,
}

@inproceedings{CTT100634670,
  author = {Toshihiro Sugii and Tatsuya Yamazaki and Kunihiro Suzuki and Tetsu Fukano and Takashi Ito},
  title = {Si Hetero-Bipolar Transistor with an SiC Emitter and a Thin Epitaxial Base},
  booktitle = {Tech. Dig. of IEDM},
  year = 1989,
}

@inproceedings{CTT100634674,
  author = {Kunihiro Suzuki and Tetsu Fukano and Hiroshi Ishiwari and Tatsuya Yamazaki and Masao Taguchi and Takashi Ito and Hajime Ishikawa},
  title = {50nm Ultra Thin Base Silicon Bipolar. Device Fabrication Based on Photo-epitaxial Growth},
  booktitle = {Digest of Symp. on VLSI Technology},
  year = 1989,
}

@inproceedings{CTT100634638,
  author = {Toshihiro Sugii and Tatsuya Yamazaki and Tetsu Fukano and Takashi Ito},
  title = {Thin-Base Bipolar Technology by Low-Temperature Photo-Epitaxy},
  booktitle = {Dig. of Symp. on VLSI Tech.},
  year = 1987,
}

@inproceedings{CTT100634620,
  author = {Tetsu Fukano and Takashi Ito and Hajime Ishikawa},
  title = {Microwave Annealing for Low Temperature VLSI Processing},
  booktitle = {Tech. Dig. of IEDM},
  year = 1985,
}

@inproceedings{CTT100634617,
  author = {Takashi Ito and Hiroshi Horie and Tetsu Fukano and Hajime Ishikawa},
  title = {A Nitride Isolated Molybdenum-Polysilicon Gate Electrode},
  booktitle = {Dig. of Tech. Papers on 1985 Symp. on VLSI Tech.},
  year = 1985,
}

@inproceedings{CTT100634612,
  author = {Tetsu Fukano and Takashi Ito and Tokushige Hisatsugu and Hajime Ishikawa},
  title = {Ultra Sharp Trench Capacitors Formed by Peripheral Etching},
  booktitle = {Ext. Abst. of 16th (1984 International Conf. on SSDM},
  year = 1984,
}

@inproceedings{CTT100634610,
  author = {Hiroshi Horie and Tetsu Fukano and Takashi Ito and Hajime Ishikawa},
  title = {Multiple Self-Alignment MOS Technology (MUSA/MOS)},
  booktitle = {Tech. Dig. of IEDM},
  year = 1984,
}

@inproceedings{CTT100634602,
  author = {Masao Taguchi and Takashi Ito and Tetsu Fukano and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Thermal Nitride Capacitors for High Density RAMs},
  booktitle = {Tech. Dig. of IEDM},
  year = 1981,
}