論文

• Fumitoshi Sugimoto, Yoshihiro Arimoto, Takashi Ito. Simultaneous Temperature Measurement of Wafers in Chemical Mechanical Polishing of Silicon Dioxide Layer, Japanese Journal of Applied Physics, The Japan Society of Applied Phisics, Vol. 34, No. 12A, pp. 6314-6320, Dec. 1995.
• Fumitoshi Sugimoto, Hiroshi Horie, Yoshihiro Arimoto, Takashi Ito. A pH-Controlled Chemical Mechanical Polishing Method for Thin Bonded Silicon-on-Insulator Wafers, Japanese Journal of Applied Physics, The Japan Society of Applied Phisics, Vol. 34, No. 1, pp. 30-35, Jan. 1995.
• Kenichi Goto, Tatsuya Yamazaki, Yasuo Nara, Tetsu Fukano, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. Ti Salicide Process for Sub-quarter-Micron CMOS Devices, IEICE TRANSACTIONS on Electronics, The Institute of Electronics, Information and Communication Engineers, Vol. E-77-C, No. 3, pp. 480-485, Mar. 1994.
• Kunihiro Suzuki, Tetsu Tanaka, Yoshiharu Tosaka, Hiroshi Horie, Yoshihiro Arimoto, Takashi Ito. Analytical Surface Potential Expression for Thin Film Double-Gate SOI MOSFETs, Solid-State Electron, ELSEVIER, Vol. 37, No. 2, pp. 327-332, Feb. 1994.
• Takayuki Aoyama, Kunihiro Suzuki, Hiroko Tashiro, Tatsuya Yamazaki, Yoshihiro Arimoto, Takashi Ito. Boron Diffusion Through Pure Silicon Oxide and Oxynitride for Metal-Oxide-Semiconductor Devices, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 140, No. 12, pp. 3624-3627, Dec. 1993.
• Yoshihiro Arimoto, Hiroshi Horie, Naoshi Higaki, Manabu Kojima, Fumitoshi Sugimoto, Takashi Ito. Advanced Metal Oxide Semiconductor and Bipolar Devices on Bonded Silicon-on-Insulators, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 140, No. 4, pp. 1138-1143, Apr. 1993.
• Manabu Kojima, Atsushi Fukuroda, Tetsu Fukano, Naoshi Higaki, Tatsuya Yamazaki, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. High-Speed SOI Bipolar Transistors Using Bonding and Thinning Techniques, IEICE TRANSACTIONS on Electronics, The Institute of Electronics, Information and Communication Engineers, Vol. E-76-C, No. 4, pp. 572-576, Apr. 1993.
• Norio Miyata, Tatsuya Yamazaki, Yoshihiro Arimoto, Takashi Ito. Intermittent Ultraviolet lrradiation for Silicon Selective Epitaxial Growth, Applied Phisics Letters, American Institute of Physics, Vol. 62, No. 8, pp. 588-590, Dec. 1992.
• Toshihiro Sugii, Tatsuya Yamazaki, Yoshihiro Arimoto, Takashi Ito, Yuji Furumura, Ikuo.Namura, Hiroshi Goto, Toshiya Tahara. SiC Growth and its Application to High Speed Si-HBTs, Microelectronic Engineering, ELSEVIER, Vol. 19, pp. 335-342, 1992.
• Atsushi Fukuroda, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. Si Wafer Bonding with Ta Silicide Formation, Japanese Journal of Applied Physics, The Japan Society of Applied Phisics, Vol. 30, No. 10A, pp. L1693-L1695, Oct. 1991.

国際会議発表 (査読有り)

• Hiromasa Hoko, Akira Ohishi, Yoshihiro Arimoto, Takashi Ito. Global Planarization for 4 mm Square Pattern, Dumic Conference, Dumic Conference, Vol. 101D, No. 95, pp. 163-167, 1995.
• Akira Sato, Youichi Momiyama, Yasuo Nara, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. A 0.5μm EEPROM Cell Using Poly-Si TFT Technology, Proc. 5lth Annual Device Research Conference, Proc. 5lth Annual Device Research Conference, 1993.
• Fumio Sugimoto, Hiroshi Horie, Yoshihiro Arimoto, Takashi Ito. A pH- Controlled Chemical Mechanical Polishing Method for Ultra-Thin Bonded SOI Wafer, Dig. of Tech. Papers, Symp. on VLSI Tech., Dig. of Tech. Papers, Symp. on VLSI Tech., pp. 113-114, 1993.
• Kunihiro Suzuki, Tetsu Tanaka, Hiroshi Horie, Yoshihiro Arimoto, Takashi Ito. Analytical Surface Potential Expression for Double-Gate SOI MOS FETS, Proc. Int. Workshop on VLSI Process and Device Modeling, Proc. Int. Workshop on VLSI Process and Device Modeling, pp. 150-151, 1993.
• Takashi Ito, Rinshi Sugino, Yasuhiro Sato, Masaki Okuno, Akira Osawa, Takayuki Aoyama, Tatsuya Yamazaki, Yoshihiro Arimoto. Photo-Excited Cleaning of Silicon with Chlorine and Fluorine, MRS Symp. Proceeding, MRS Symp. Proceeding, 1992.
• Yoshihiro Arimoto, Shinpei Hijiya, Takashi Ito. Advanced Bipolar and MOS Devices Based on Silicon Wafer-Bonding, Proc. 1st. Int. Symp. on Semicon. Wafer Bonding, ECS, Proc. 1st. Int. Symp. on Semicon. Wafer Bonding, ECS, pp. 414-426, 1992.
• Naoshi Higaki, Tetsu Fukano, Atsushi Fukuroda, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. A Thin-Base Lateral Bipolar Transistor Fabricated on Bonded SOI, Dig. Tech. Papers of Symp. on VLSI Tech., Dig. Tech. Papers of Symp. on VLSI Tech., pp. 53-54, 1991.
• Manabu Kojim, Atsushi Fukuroda, Tetsu Fukano, Naoshi Higaki, Tatsuya Yamazaki, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. High-Speed Epitaxial Base Transistors on Bonded SOI, IEEE 1991 ,Bipolar Circuits and Technology Meeting, IEEE 1991 ,Bipolar Circuits and Technology Meeting, pp. 63-66, 1991.
• Atsushi Fukuroda, Toru Miyabo, Manabu Kojima, Tetsu Fukano, Naoshi Higaki, Tatsuya Yamazaki, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. Wafer Bonding and Thinning for High-Speed SOI Epitaxial-Base Transistor, Ext. Abst. of Int. Conf. on SSDM, Ext. Abst. of Int. Conf. on SSDM, pp. 168-169, 1991.

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