論文

• Toshihiro Sugii, Tatsuya Yamazaki, Yoshihiro Arimoto, Takashi Ito, Yuji Furumura, Ikuo.Namura, Hiroshi Goto, Toshiya Tahara. SiC Growth and its Application to High Speed Si-HBTs, Microelectronic Engineering, ELSEVIER, Vol. 19, pp. 335-342, 1992.

国際会議発表 (査読有り)

• Tatsuya Yamazaki, Itaru Namura, Toshihiro Sugii, Hiroshi Goto, Akinori Tahara, Takashi Ito. High Speed Si Hetero-Bipolar Transistor with a SiC Wide-gap Emitter and an Ultra-thin Heavily Doped Photoepitaxially Grown Base, Proc. IEEE 1991 Bipolar Circuits and Technology Meeting, Proc. IEEE 1991 Bipolar Circuits and Technology Meeting, pp. 71-74, 1991.
• Tatsuya Yamazaki, Ikuo Namura, Hiroshi Goto, Atsushi Tahara, Takashi Ito. A 11.7 GHz l/8 Divider using 43 GHz Si High Speed Bipolar Transistor with Photo-epitaxially Grown Ultra Thin Base, Tech. Digest of IEDM, Tech. Digest of IEDM, pp. 309-312, 1990.

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