論文

• Takayuki Aoyama, Kunihiro Suzuki, Hiroko Tashiro, Yoko Toda, Tatsuya Yamazaki, Kanetake Takasaki, Takashi Ito. Effect of Fluorine on Boron Diffusion in Thin Silicon Dioxides and Oxynitride, Journal of Applied Physics, American Institute of Physics, Vol. 77, No. 1, pp. 417-419, Sept. 1994.
• Kunihiro Suzuki, Tetsu Tanaka, Yoshiharu Tosaka, Hiroshi Horie, Yoshihiro Arimoto, Takashi Ito. Analytical Surface Potential Expression for Thin Film Double-Gate SOI MOSFETs, Solid-State Electron, ELSEVIER, Vol. 37, No. 2, pp. 327-332, Feb. 1994.
• Takayuki Aoyama, Kunihiro Suzuki, Hiroko Tashiro, Tatsuya Yamazaki, Yoshihiro Arimoto, Takashi Ito. Boron Diffusion Through Pure Silicon Oxide and Oxynitride for Metal-Oxide-Semiconductor Devices, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 140, No. 12, pp. 3624-3627, Dec. 1993.

国際会議発表 (査読有り)

• Kunihiro Suzuki, Tetsu Fukano, Tatsuya Yamazaki, Shinpei Hijiya, Takashi Ito, Hajime Ishikawa. Pseudo-HBT with Polysilicon Emitter Contact and an Ultra shallow Highly Doped Base by Photoepitaxy, Tech. Dig. of, IEDM, Tech. Dig. of, IEDM, pp. 811-813, 1998.
• Kunihiro Suzuki, Tetsu Tanaka, Hiroshi Horie, Yoshihiro Arimoto, Takashi Ito. Analytical Surface Potential Expression for Double-Gate SOI MOS FETS, Proc. Int. Workshop on VLSI Process and Device Modeling, Proc. Int. Workshop on VLSI Process and Device Modeling, pp. 150-151, 1993.
• Toshihiro Sugii, Tatsuya Yamazaki, Kunihiro Suzuki, Tetsu Fukano, Takashi Ito. Si Hetero-Bipolar Transistor with an SiC Emitter and a Thin Epitaxial Base, Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 659-662, 1989.
• Kunihiro Suzuki, Tetsu Fukano, Hiroshi Ishiwari, Tatsuya Yamazaki, Masao Taguchi, Takashi Ito, Hajime Ishikawa. 50nm Ultra Thin Base Silicon Bipolar. Device Fabrication Based on Photo-epitaxial Growth, Digest of Symp. on VLSI Technology, Digest of Symp. on VLSI Technology, pp. 91-93, 1989.
• Tetsuo Eshita, Kunihiro Suzuki, Toru Hara, Fumio Mieno, Yuji Furumura, Mamoru Maeda, Toshihiro Sugii, Takashi Ito. Low-Temperature Heteroepitaxy of β- SiC on Si(111) Substrates, Proc. MRS Symp., pp. 357-362, 1988.

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