国際会議発表 (査読有り)

• Kunihiro Suzuki, Tetsu Fukano, Hiroshi Ishiwari, Tatsuya Yamazaki, Masao Taguchi, Takashi Ito, Hajime Ishikawa. 50nm Ultra Thin Base Silicon Bipolar. Device Fabrication Based on Photo-epitaxial Growth, Digest of Symp. on VLSI Technology, Digest of Symp. on VLSI Technology, pp. 91-93, 1989.
• Takashi Kato, Takashi Ito, Masao Taguchi, Tetsuo Nakamura, Hajime Ishikawa. Interfacial Oxidation of Ta205-Si Systems for High Density DRAM, Dig. of Tech. Papers on 1983 Symp. on VLSI Tech., Dig. of Tech. Papers on 1983 Symp. on VLSI Tech., pp. 86-87, 1983.
• Masao Taguchi, Takashi Ito, Tetsu Fukano, Tetsuo Nakamura, Hajime Ishikawa. Thermal Nitride Capacitors for High Density RAMs, Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 400-403, 1981.

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