論文

• Miranda Enrique, Takamasa Kawanago, Kuniyuki KAKUSHIMA, J. Sune, HIROSHI IWAI. Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown, Microelectronics Reliability, Vol. 52, pp. 1909-1912, 2012.
• Miranda Enrique, shinichi kano, C. Dou, Kuniyuki KAKUSHIMA, J. Sune, HIROSHI IWAI. Nonlinear conductance quantization effects in CeO/SiO-based resistive switching devices, APPLIED PHYSICS LETTERS, Vol. 101, 01291, 2012.

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