|
研究業績一覧 (1件)
- 2025
- 2024
- 2023
- 2022
- 2021


- 全件表示
国際会議発表 (査読なし・不明)
-
W. Feng,
R. Hettiarachchi,
Yeonghun Lee,
Soshi Sato,
Kuniyuki KAKUSHIMA,
M. Sato,
K. Fukuda,
M. Niwa,
K. Yamabe,
Kenji Shiraishi,
HIROSHI IWAI.
Fundamental origin of excellent low-noise property in 3D Si-MOSFETs ~Impact of charge-centroid in the channel due to quantum effect on 1/f noise ~,
2011 IEDM,
2013.
[ BibTeX 形式で保存 ]
[ 論文・著書をCSV形式で保存
]
[ 特許をCSV形式で保存
]
|