国際会議発表 (査読有り)

• Shuhei Hosoda, Kamale Tuokedaerhan, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai. Reliability of La-Silicate Mos Capacitors With Tungsten Carbide Gate Electrode, 224th ECS Meeting in San Francisco, Oct. 2013.

国際会議発表 (査読なし・不明)

• K. Tuokedaerhan, Shuhei Hosoda, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, K. Tuokedaerhan, S. Hosoda, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan, 2014.
• Shuhei Hosoda, Kamale Tuokedaerhan, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kenji Natori, takeo hattori, HIROSHI IWAI. Atomically flat interface of La-silicate/Si with W2C gate electrodes, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• K. Tuokedaerhan, Shuhei Hosoda, Yoshinori Nakamura, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Influence of Carbon Incorporation in W Gate Electrode for La-silicate Gate Dielectrics, 2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCINCE AND TECHNOLOGY, 2014.
• Shuhei Hosoda, K. Tuokedaerhan, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Reliability of La-silicate MOS capacitors with tungsten carbide gate electrode for scaled EOT, ECS 224nd Meeting, ECS Transactions, Vol. 58, No. 7, pp. 61-64, Oct. 2013.
• Shuhei Hosoda, K. Tuokedaerhan, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Improvenents in interface, states with W-carbide metal gate for La2O3/si MOS Capacitor, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• K. Tuokedaerhan, Shuhei Hosoda, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Work Function Extraction of W,Ta and Ti Carbides Formed by Multi Stacked Process, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.

国内会議発表 (査読なし・不明)

• Tuokedaerhan Kamale, Shuhei Hosoda, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. W2Cゲート電極によるLa-silicate MOSFETの移動度改善, 第61回応用物理学会春季学術講演会, 2014.
• 細田修平, Tuokedaerhan Kamale, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. W2C電極導入によるLa-silicate/Siにおける平坦な界面の実現, 第61回応用物理学会春季学術講演会, 2014.
• 中村嘉基, 細田修平, Tuokedaerhan Kamale, 角嶋邦之, 片岡好則, 西山彰, 若林整, 杉井信之, 筒井一生, 名取研二, 岩井洋. W2Cゲート電極とLa-silicateゲート絶縁膜を用いたMOSキャパシタの信頼性評価, 第74回応用物理学会秋季学術講演会, 2013.

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