@article{CTT100676861, author = {Masashi Yukinari and Noriaki Sato and Nobuhiko Nishiyama and Shigehisa Arai}, title = {Spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser under various operating conditions}, journal = {IEICE Electronics Express}, year = 2014, } @article{CTT100653654, author = {Noriaki Sato and Mizuki Shirao and Takashi Sato and Masashi Yukinari and Nobuhiko Nishiyama and Tomohiro Amemiya and Shigehisa Arai}, title = {Design and Characterization of AlGaInAs/InP Buried Heterostructure Transistor Lasers Emitting at 1.3-µm Wavelength}, journal = {IEEE J. Select. Top. Quantum Electron.}, year = 2013, } @article{CTT100653653, author = {Noriaki Sato and Mizuki Shirao and Takashi Sato and Masashi Yukinari and Nobuhiko Nishiyama and Tomohiro Amemiya and Shigehisa Arai}, title = {Room-Temperature Continuous-Wave Operation of npn-AlGaInAs Transistor Laser Emitting at 1.3-um Wavelength}, journal = {IEEE Photonics Technol. Lett.}, year = 2013, } @article{CTT100646590, author = {Mizuki Shirao and Nobuhiko Nishiyama and Noriaki Sato and Shigehisa Arai}, title = {Theoretical analysis of the damping effect on a transistor laser}, journal = {IEICE Electronics Express}, year = 2012, } @article{CTT100644768, author = {Yuuta Takino and Mizuki Shirao and Noriaki Sato and takashi sato and Tomohiro Amemiya and Nobuhiko Nishiyama and SHIGEHISA ARAI}, title = {Improved regrowth interface of AlGaInAs/InP-buried-heterostructure lasers by in-situ thermal cleaning}, journal = {IEEE Journal of Quantum Electronics}, year = 2012, } @article{CTT100633300, author = {Mizuki Shirao and takashi sato and Noriaki Sato and Nobuhiko Nishiyama and SHIGEHISA ARAI}, title = {Room-temperature operation of npn- AlGaInAs/InP multiple quantum well transistor laser emitting at 1.3-µm wavelength}, journal = {Optics Express}, year = 2012, } @article{CTT100625279, author = {mizuki shirao and takashi sato and yuta takino and noriaki sato and nobuhiko nishiyama and shigehisa arai}, title = {Room-Temperature Continuous-Wave Operation of 1.3-µm Transistor Laser with AlGaInAs/InP Quantum Wells}, journal = {Appl. Phys. Express}, year = 2011, } @inproceedings{CTT100660905, author = {行成 元志 and 佐藤 憲明 and 西山 伸彦 and 荒井 滋久}, title = {1.3μm帯npn-AlGaInAs/InPトランジスタレーザ発光スペクトルの動作条件依存性}, booktitle = {}, year = 2013, } @inproceedings{CTT100660903, author = {Masashi Yukinari and Noriaki Sato and Nobuhiko Nishiyama and Shigehisa Arai}, title = {Spectral Characteristics under Various Operation Conditions of 1.3-μm npn-AlGaInAs/InP Transistor Laser}, booktitle = {}, year = 2013, } @inproceedings{CTT100639145, author = {Noriaki Sato and Mizuki Shirao and Takashi Sato and Masashi Yukinari and Nobuhiko Nishiyama and Tomohiro Amemiya and S. Arai}, title = {Room-Temperature Continuous-Wave Operation of a 1.3-μm npn-AlGaInAs/InP Transistor Laser}, booktitle = {}, year = 2012, } @inproceedings{CTT100630529, author = {佐藤 孝司 and 白尾 瑞基 and 佐藤 憲明 and 西山 伸彦 and 荒井 滋久}, title = {1.3-µm帯npn-AlGaInAs/InPトランジスタレーザの室温パルス動作}, booktitle = {}, year = 2011, } @inproceedings{CTT100630530, author = {Takashi Sato and Mizuki Shirao and Yuta Takino and Noriaki Sato and Nobuhiko Nishiyama and Shigehisa Arai}, title = {Room-Temperature Lasing Operation of a 1.3-µm npn-AlGaInAs/InP Transistor Laser}, booktitle = {}, year = 2011, } @inproceedings{CTT100625412, author = {佐藤憲明 and 白尾瑞基 and 佐藤孝司 and 西山伸彦 and 荒井滋久}, title = {ICP-RIEを用いたAlGaInAs/InP埋め込みヘテロ構造レーザ}, booktitle = {}, year = 2011, } @inproceedings{CTT100625411, author = {Noriaki Sato and Yuuta Takino and Mizuki Shirao and Nobuhiko NIshiyama and Shigehisa Arai}, title = {Effect of Thermal Cleaning on Regrowth Interface Quality of AlGaInAs/InP Buried Heterostructure Lasers}, booktitle = {}, year = 2011, } @inproceedings{CTT100625410, author = {佐藤憲明 and 瀧野祐太 and 白尾瑞基 and 佐藤孝司 and 西山伸彦 and 荒井滋久}, title = {AlGaInAs/InP 埋め込みヘテロ構造レーザにおけるサーマルクリーニング中温度の再成長界面品質に対する影響}, booktitle = {}, year = 2011, } @inproceedings{CTT100625276, author = {mizuki shirao and takashi sato and noriaki sato and nobuhiko nishiyama and shigehisa arai}, title = {Lasing Operation of Long-Wavelength Transistor Laser Using AlGaInAs/InP Quantum Well Active Region}, booktitle = {The 23rd International Conference on Indium Phosphide and Related Materials (IPRM2011)}, year = 2011, }