論文

• Masashi Yukinari, Noriaki Sato, Nobuhiko Nishiyama, Shigehisa Arai. Spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser under various operating conditions, IEICE Electronics Express, Vol. 11, No. 18, pp. 1-6, Aug. 2014.
• Noriaki Sato, Mizuki Shirao, Takashi Sato, Masashi Yukinari, Nobuhiko Nishiyama, Tomohiro Amemiya, Shigehisa Arai. Design and Characterization of AlGaInAs/InP Buried Heterostructure Transistor Lasers Emitting at 1.3-µm Wavelength, IEEE J. Select. Top. Quantum Electron., Vol. 19, No. 4, pp. 1502608, July 2013.  公式リンク  
  
• Noriaki Sato, Mizuki Shirao, Takashi Sato, Masashi Yukinari, Nobuhiko Nishiyama, Tomohiro Amemiya, Shigehisa Arai. Room-Temperature Continuous-Wave Operation of npn-AlGaInAs Transistor Laser Emitting at 1.3-um Wavelength, IEEE Photonics Technol. Lett., Vol. 25, No. 8, pp. 728-730, Feb. 2013.  公式リンク  
  
• Mizuki Shirao, Nobuhiko Nishiyama, Noriaki Sato, Shigehisa Arai. Theoretical analysis of the damping effect on a transistor laser, IEICE Electronics Express, Vol. 9, No. 23, pp. 1792-1798, Dec. 2012.
• Yuuta Takino, Mizuki Shirao, Noriaki Sato, takashi sato, Tomohiro Amemiya, Nobuhiko Nishiyama, SHIGEHISA ARAI. Improved regrowth interface of AlGaInAs/InP-buried-heterostructure lasers by in-situ thermal cleaning, IEEE Journal of Quantum Electronics, Vol. 48, No. 8, pp. 971-979, Aug. 2012.  公式リンク  
  
• Mizuki Shirao, takashi sato, Noriaki Sato, Nobuhiko Nishiyama, SHIGEHISA ARAI. Room-temperature operation of npn- AlGaInAs/InP multiple quantum well transistor laser emitting at 1.3-µm wavelength, Optics Express, Vol. 20, No. 4, pp. 3983–3989, Feb. 2012.
• mizuki shirao, takashi sato, yuta takino, noriaki sato, nobuhiko nishiyama, shigehisa arai. Room-Temperature Continuous-Wave Operation of 1.3-µm Transistor Laser with AlGaInAs/InP Quantum Wells, Appl. Phys. Express, Vol. 4, No. 7, pp. 072101-1-3, June 2011.

国際会議発表 (査読有り)

• Masashi Yukinari, Noriaki Sato, Nobuhiko Nishiyama, Shigehisa Arai. Spectral Characteristics under Various Operation Conditions of 1.3-μm npn-AlGaInAs/InP Transistor Laser, The 10th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR 2013), ThK2-2, July 2013.
• Noriaki Sato, Mizuki Shirao, Takashi Sato, Masashi Yukinari, Nobuhiko Nishiyama, Tomohiro Amemiya, S. Arai. Room-Temperature Continuous-Wave Operation of a 1.3-μm npn-AlGaInAs/InP Transistor Laser, 23rd IEEE International Semiconductor Laser Conference (ISLC 2012), No. MA7, Oct. 2012.  公式リンク  
  
• Takashi Sato, Mizuki Shirao, Yuta Takino, Noriaki Sato, Nobuhiko Nishiyama, Shigehisa Arai. Room-Temperature Lasing Operation of a 1.3-µm npn-AlGaInAs/InP Transistor Laser, the IEEE Photonics Conference 2011, Oct. 2011.
• Noriaki Sato, Yuuta Takino, Mizuki Shirao, Nobuhiko NIshiyama, Shigehisa Arai. Effect of Thermal Cleaning on Regrowth Interface Quality of AlGaInAs/InP Buried Heterostructure Lasers, International Symposium on Compound Semiconductors, P5.60, July 2011.
• mizuki shirao, takashi sato, noriaki sato, nobuhiko nishiyama, shigehisa arai. Lasing Operation of Long-Wavelength Transistor Laser Using AlGaInAs/InP Quantum Well Active Region, The 23rd International Conference on Indium Phosphide and Related Materials (IPRM2011), pp. Tu-3.2.4, May 2011.

国内会議発表 (査読なし・不明)

• 行成 元志, 佐藤 憲明, 西山 伸彦, 荒井 滋久. 1.3μm帯npn-AlGaInAs/InPトランジスタレーザ発光スペクトルの動作条件依存性, 電気情報通信学会 2013年ソサイエティ大会, C-4-26, Sept. 2013.
• 佐藤 孝司, 白尾 瑞基, 佐藤 憲明, 西山 伸彦, 荒井 滋久. 1.3-µm帯npn-AlGaInAs/InPトランジスタレーザの室温パルス動作, 第72回応用物理学会学術講演会, Oct. 2011.
• 佐藤憲明, 白尾瑞基, 佐藤孝司, 西山伸彦, 荒井滋久. ICP-RIEを用いたAlGaInAs/InP埋め込みヘテロ構造レーザ, 第72回応用物理学会学術講演会, July 2011.
• 佐藤憲明, 瀧野祐太, 白尾瑞基, 佐藤孝司, 西山伸彦, 荒井滋久. AlGaInAs/InP 埋め込みヘテロ構造レーザにおけるサーマルクリーニング中温度の再成長界面品質に対する影響, 2011春季第58回応用物理関係連合講演会, July 2011.

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