@inproceedings{CTT100610502,
  author = {武部直明 and 山下浩明 and 高橋新之助 and 宮本恭幸 and 古屋一仁},
  title = {SiO2細線埋込InP系HBTにおけるCBr4を使ったin-situエッチング},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598419,
  author = {YASUYUKI MIYAMOTO and Hiroaki Yamashita and Naoaki Takebe and KAZUHITO FURUYA},
  title = {In-situ Etching in MOVPE for Thin Collector of InP HBT with Buried SiO2 Wire},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610503,
  author = {武部直明 and 山下浩明 and 高橋新之助 and 齋藤尚史 and 小林 嵩 and 宮本恭幸 and 古屋一仁},
  title = {SiO2細線埋込InP系HBTにおけるCBr4を使ったIn-situエッチング},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100576980,
  author = {高橋新之助 and 山下浩明 and 小林嵩 and 磯谷優治 and 鈴木裕之 and 宮本恭幸 and 古屋一仁},
  title = {EB露光により作製したエミッタ幅200nmのInP/InGaAs SHBT},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100549527,
  author = {Shinnosuke Takahashi and Tsukasa Miura and Hiroaki Yamashita and Yasuyuki Miyamoto and Kazuhito Furuya},
  title = {DC Characteristics of Heterojunction Bipolar Transistor with Buried SiO2 Wires in Collector},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100549526,
  author = {Hiroaki Yamashita and Tsukasa Miura and Shinnosuke Takahashi and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Fabrication of 200-nm-thick SiO2 wires buried in InP for reduction in collector capacitance in InP/InGaAs DHBT},
  booktitle = {},
  year = 2007,
}