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新井健司 研究業績一覧 (5件)
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論文
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Takeshi Arai,
Soshi Iimura,
Hideo Hosono.
Doping Induced Polymorph and Carrier Polarity Changes in LaSeF,
Chem. Mater.,
30,
597-601,
Jan. 2018.
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Takeshi Arai,
Soshi Iimura,
Junghwan Kim,
Yoshitake Toda,
Shigenori Ueda,
Hideo Hosono.
Chemical Design and Example of Transparent Bipolar Semiconductors,
Journal of the American Chemical Society,
Vol. 139,
pp. 17175-17180,
Nov. 2017.
公式リンク
学位論文
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Design for Novel Semiconductors Based on Early Transition Metals,
Thesis,
Doctor (Engineering),
Tokyo Institute of Technology,
2018/03/26,
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Design for Novel Semiconductors Based on Early Transition Metals,
Summary,
Doctor (Engineering),
Tokyo Institute of Technology,
2018/03/26,
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Design for Novel Semiconductors Based on Early Transition Metals,
Exam Summary,
Doctor (Engineering),
Tokyo Institute of Technology,
2018/03/26,
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