@article{CTT100628822,
  author = {R. Terao and T. Kanazawa and S. Ikeda and Y. Yonai and A. Kato and Y. Miyamoto},
  title = {InP/InGaAs Composite MOSFETs with Regrown Source and Al2O3 gate dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm},
  journal = {Applied Phys. Exp.},
  year = 2011,
}

@article{CTT100611953,
  author = {Toru Kanazawa and kazuya wakabayashi and Hisashi Saito and Ryousuke Terao and Shunsuke Ikeda and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Submicron InP/InGaAs Composite-Channel Metal–Oxide–Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source},
  journal = {Applied Physics Express},
  year = 2010,
}

@inproceedings{CTT100670027,
  author = {柏木 and 上田 and 寺尾 and 鈴木 and 高尾 and 下川 and 中本},
  title = {ヒータ加熱方式を用いた超小型香り発生デバイスの性能評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100628829,
  author = {T. Kanazawa and R. Terao and S. Ikeda and Y. Miyamoto},
  title = {MOVPE-regrown source/drain regions for III-V MOSFETs with high drain current of 1.28 A/mm},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619804,
  author = {金澤 徹 and 寺尾 良輔 and 山口 裕太郎 and 池田 俊介 and 米内 義晴 and 加藤 淳 and 宮本 恭幸},
  title = {裏面電極を有するⅢ－Ⅴ族量子井戸型チャネルMOSFET},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100612622,
  author = {金澤徹 and 寺尾良輔 and 山口裕太郎 and 池田俊介 and 米内義晴 and 加藤淳 and 宮本恭幸},
  title = {Si基板上貼付された裏面電極付InP/InGaAs MOSFET},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100612624,
  author = {Toru Kanazawa and Ryousuke Terao and Yuutarou Yamaguchi and Shunsuke Ikeda and Yosiharu Yonai and YASUYUKI MIYAMOTO},
  title = {InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100612623,
  author = {寺尾良輔 and 金澤徹 and 池田俊介 and 米内義晴 and 加藤淳 and 宮本恭幸},
  title = {Al2O3ゲート絶縁膜および再成長ソースを有するサブミクロンInP/InGaAs n-MOSFET},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610518,
  author = {T. Kanazawa and K. Wakabayashi and H. Saito and R. Terao and T. Tajima and S. Ikeda and Y. Miyamoto and K. Furuya},
  title = {Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n+-source/drain buried in channel undercut},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610493,
  author = {若林和也 and 金澤 徹 and 齋藤尚史 and 寺尾良輔 and 池田俊介 and 宮本恭幸 and 古屋一仁},
  title = {再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610505,
  author = {金澤 徹 and 若林和也 and 齋藤尚史 and 寺尾良輔 and 田島智宣 and 池田俊介 and 宮本恭幸 and 古屋一仁},
  title = {III-V族サブミクロンチャネルを有する高移動度MOSFET},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610494,
  author = {寺尾良輔 and 金澤 徹 and 齋藤尚史 and 若林和也 and 池田俊介 and 宮本恭幸 and 古屋一仁},
  title = {Al2O3ゲート絶縁膜を用いたInP/InGaAsチャネル n-MOSFETの電気特},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100597640,
  author = {金澤徹 and 若林和也 and 齋藤尚史 and 寺尾良輔 and 田島智宣 and 池田俊介 and 宮本恭幸 and 古屋一仁},
  title = {Al2O3ゲート絶縁膜を用いたInP/InGaAsコンポジットチャネルMOSFET},
  booktitle = {電子情報通信学会技術研究報告 電子デバイス},
  year = 2010,
}

@inproceedings{CTT100591555,
  author = {Toru Kanazawa and Hisashi Saito and Kazuya Wakabayashi and Ryousuke Terao and Tomonori Tajima and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N<sup>+</sup>-InGaAs Source Region},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610500,
  author = {K. Wakabayashi and T. Kanazawa and H. Saito and R. Terao and S. Ikeda and Y. Miyamoto and K. Furuya},
  title = {InP/In0.53Ga0.47As composite channel n-MOSFETwith heavily dopedregrown source/drain structure},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610491,
  author = {若林和也 and 金澤 徹 and 齋藤尚史 and 田島智宣 and 寺尾良輔 and 宮本恭幸 and 古屋一仁},
  title = {「再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100591554,
  author = {若林 和也 and 金澤 徹 and 齋藤 尚史 and 田島 智宣 and 寺尾 良輔 and 宮本 恭幸 and 古屋 一仁},
  title = {再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性},
  booktitle = {},
  year = 2009,
}