国際会議発表 (査読有り)

• K. Kakushima, Yuta Ikeuchi, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, T. Kikuchi, S. Ishikawa. Low Temperature Ohmic Contact for p-type GaN using Mg Electrodes, Int. Workshop on Junction Technology (IWJT2017), June 2017.
• Y. Ikeuchi, T. Hoshii, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima, S.Ishikawa. Characteristics of Fe/pGaN Contact upon Annealing Process, 47th IEEE Semiconductor Interface Specialists Conference (SISC2016), Dec. 2016.

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