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SulthoniMuhammad Amin 研究業績一覧 (10件)
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論文
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M. A. Sulthoni,
T. Kodera,
Y. Kawano,
S. Oda.
Optimization and Tunnel Junction Parameters Extraction of Electro-statically Defined Silicon Double Quantum Dots Structure,
Japanese Journal of Applied Physics,
Vol. 52,
pp. 081301 (5 pages),
July 2013.
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M. A. Sulthoni,
T. Kodera,
Y. Kawano,
S. Oda.
A Multi-purpose Electrostatically Defined Silicon Quantum Dots,
Jpn. J. Appl. Phys,
Vol. 51,
No. 2,
pp. 02BJ10-1-4,
May 2012.
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Muhammad Amin Sulthoni,
Tetsuo Kodera,
Yukio Kawano,
Shunri Oda.
A Multi-Purpose Electrostatically Defined Silicon Quantum Dot Structure,
Japanese Journal of Applied Physics,
Vol. 51,
pp. 02BJ10 (4 pages),
Feb. 2012.
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M. A. Sulthoni,
T. Kodera,
K. Uchida,
S. Oda.
Numerical simulation study of electrostatically defined silicon double quantum dot device,
J. Appl. Phys.,
Vol. 110,
pp. 054511 -1-4,
Aug. 2011.
国際会議発表 (査読有り)
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Muhammad Amin Sulthoni,
Tetsuo Kodera,
Yukio Kawano,
Shunri Oda.
Transport Simulation of an Electrostatically Defined Silicon Double Quantum Dot Device,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
P-2,
Oct. 2011.
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M. A. Sulthoni,
T. Kodera,
Y. Kawano,
S. Oda.
A Multi-purpose Electrostatically Defi ned Silicon Quantum Dot Structure,
Solid State Devices and Materials Conference, Extended Abstracts,
P-9-7,
Sept. 2011.
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Muhammad Amin Sulthoni,
Tetsuo Kodera,
Ken Uchida,
Shunri Oda.
Simulation Study of Electrostatically Defined Silicon Double Quantum Dot Device,
IEEE Silicon Nanoelectronics Workshop,
No. 5-12,
June 2011.
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Muhammad Amin Sulthoni,
Tetsuo Kodera,
Ken Uchida,
Shunri Oda.
Preparation of SOI-based Double Quantum Dots Structure Defined by Geometry and Electrostatically,
Solid State Devices and Materials Conference, Extended Abstracts,
Sept. 2010.
国内会議発表 (査読なし・不明)
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SulthoniMuhammad Amin,
小寺哲夫,
蒲原知宏,
河野行雄,
小田俊理.
単層ゲートによるシリコン2重量子ドット形成のシミュレーション,
2012年春季第59回応用物理学関係連合学術講演会,
18a-GP6-10,
Mar. 2013.
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Muhammad Amin Sulthoni,
Tetsuo Kodera,
Ken Uchida,
Syunri Oda.
Simulation of silicon double quantum dots device fabricated by combining lithographical and electrostatical approaches,
第57回応用物理学関係連合講演会,
19a-B-4,
Mar. 2010.
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