論文

• Masaki Otomo, Masaya Hamada, Ryo Ono, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Chemical states of PVD-ZrS2 film underneath scaled high-k film with self-oxidized ZrO2 film as interfacial layer, Japanese Journal of Applied Physics, IOP Publishing, Vol. 62, p. SC1015, Jan. 2023.  公式リンク  
  
• Taiga Horiguchi, Takuya Hamada, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing, Japanese Journal of Applied Physics, Vol. 61, 075506, July 2022.
• Takuya Hamada, Masaya Hamada, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. High Seebeck Coefficient in PVD-WS2 Film with Grain-Size Enlargement, Japanese Journal of Applied Physics (JJAP), Vol. 61, Feb. 2022.
• Ryo Ono, Shinya Imai, Yuta Kusama, Takuya Hamada, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Emi Kano, Nobuyuki Ikarashi, Hitoshi Wakabayash. Elucidation of PVD MoS2 Film Formation Process and its Structure Focusing on Sub-Monolayer Region, Japanese Journal of Applied Physics (JJAP), Vol. 61, Feb. 2022.
• Takuya Hamada, Masaya Hamada, Satoshi Igarashi, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET with TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box, Journal of the Electron Devices Society (J-EDS), Vol. 9, p. 1117, Aug. 2021.
• Shinya Imai, Takuya Hamada, Masaya Hamada, Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Shigetaka Tomiya, Kazuo Tsutsui, Hitoshi Wakabayashi. Importance of Crystallinity Improvement in MoS2 film just after MoS2-Compound Sputtering even followed by Post Sulfurization for Chip-Size Fabrication, Japanese Journal of Applied Physics (JJAP) （SSDM特集号）, Vol. 60, Page SBBH10, Feb. 2021.
• Masaya Hamada, Kentaro Matsuura, Takuya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. ZrS2 Symmetrical-Ambipolar FETs with Near-Midgap TiN Film for Both Top-Gate electrode and Schottky-Barrier Contact, Japanese Journal of Applied Physics (JJAP) （SSDM特集号）, Vol. 60, Page SBBH05, Jan. 2021.
• Takuya Hamada, Shigetaka Tomiya, Tetsuya Tatsumi, Masaya Hamada, Taiga Horiguchi, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Sheet Resistance Reduction of MoS2 Film using Sputtering and Chlorine Plasma Treatment followed by Sulfur Vapor Annealing, Journal of the Electron Devices Society (J-EDS), Vol. 9, Page 278-285, Jan. 2021.
• Satoshi Igarashi, Yusuke Mochiduki, Haruki Tanigawa, Masaya Hamada, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-Aligned-TiSi2 Bottom Contact with APM Cleaning and Post-annealing for Sputtered-MoS2 Film, Japanese Journal of Applied Physics (JJAP) （SSDM特集号）, Vol. 60, Page SBBH04, Jan. 2021.
• Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Haruki Tanigawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Sulfurization even through Al2O3 Passivation Film Simultaneously Preventing Oxidation, Japanese Journal of Applied Physics (JJAP), Vol. 59, No. 10, Page 105501, Sept. 2020.
• Kentaro Matsuura, Masaya Hamada, Takuya Hamada, Haruki Tanigawa, Takuro Sakamoto, Atsushi Hori, Iriya Muneta, Takamasa Kawanago, Kuniyuki Kakushima, Kazuo. Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration, Japanese Journal of Applied Physics (JJAP) (Rapid Communication), Vol. 59, No. 8, Page 80906, Aug. 2020.
• Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film using UHV RF Magnetron Sputtering and Sulfurization, Journal of the Electron Devices Society (J-EDS), IEEE, Vol. 7, No. 1, pp. 1258-1263, Dec. 2019.

国際会議発表 (査読有り)

• Takuya Hamada, Taiga Horiguchi, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. Grain Size Enlargement in 2D WS2 Film with Low-Power RF-Magnetron Sputtering, Internatonal Conference on Solid State Devices and Materials, Sept. 2021.
• Ryo Ono, Shinya Imai, Yuta Kusama, Takuya Hamada, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Nobuyuki Ikarashi, Hitoshi Wakabayashi. Growth Mechanism of PVD MoS2 Film from Sub-Monolayer Region, International Conference on Solid State Devices and Materials, Sept. 2021.
• Masaya Hamada, Takuya Hamada, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Side-Contact Architecture for p/n-Stacked-Nano-Sheet ZrS2 2D-FETs Beyond 1-nm Technology Node, International Workshop on Junction Technology (IWJT2021), June 2021.
• Masaya Hamada, Kentaro Matsuura, Takuya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. ZrS2 Ambipolar FETs with Schottky Barrier to Near-Midgap TiN Contact Controlled by Top Gate TiN/Al2O3 Stack, International Conference of Solid State Devices and Materials (SSDM) 2020, Sept. 2020.
• Satoshi Igarashi, Yusuke Mochiduki, Haruki Tanigawa, Masaya Hamada, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Low Contact Resistance at Interface between Sputtered-MoS2 Film and TiSi2 Contact Treated by Higher-Temperature Forming-Gas Annealing, International Conference of Solid State Devices and Materials (SSDM) 2020, Sept. 2020.
• Shinya Imai, Takuya Hamada, Masaya Hamada, Takanori Shirokura, Shigetaka Tomiya, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Kazuo Tsutsui, Hitoshi Wakabayashi. Importance of MoS2-Compound Sputtering even with Sulfur-Vapor Anneal for Chip-Size Fabrication, International Conference of Solid State Devices and Materials (SSDM) 2020, Sept. 2020.
• K. Matsuura, M. Hamada, T. Hamada, H. Tanigawa, T. Sakamoto, W. Cao, K. Parto, A. Hori, I. Muneta, T. Kawanago, K. Kakushima, K. Tsutsui, A. Ogura, K. Banerjee, H. Wakabayashi. Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration, Int. Workshop on Juction Technology (IWJT2019), June 2019.
• Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. High Hall-Effect Mobility of Atomic-Layered Polycrystalline-ZrS2 Film using Sputtering and Sulfur Annealing, 3rd Electron Devices Technology and Manufactureing Conference (EDTM2019), Mar. 2019.

国内会議発表 (査読なし・不明)

• 濱田 昌也, 松浦 賢太朗, 濱田 拓也, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact, 第70回応用物理学会春季学術講演会, Mar. 2023.
• 立松 真一, 濱田 昌也, 濱田 拓也, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. アニール処理によるWS2-Niエッジコンタクト特性の向上, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 松浦 賢太朗, 濱田 昌也, 濱田 拓也, 谷川 晴紀, 坂本 拓朗, 堀 敦, 宗田 伊理也, 川那子 高暢, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. 大面積集積化に向けたスパッタ堆積ノーマリーオフMoS2-nMISFETs, 第67回応用物理学会春期学術講演会, Mar. 2020.
• 五十嵐 智, 望月 祐輔, 谷川 晴紀, 濱田 昌也, 松浦 賢太朗, 角嶋 邦之, 筒井 一生, 若林 整. スパッタMoS2膜とTiSi2膜の界面におけるFGアニールによるコンタクト抵抗低減, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 濱田 昌也, 松浦 賢太朗, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタ法と硫黄雰囲気アニールで成膜した高いホール効果移動度を持つ層状ZrS2膜, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 濱田 拓也, 堀口 大河, 辰巳 哲也, 冨谷 茂隆, 濱田 昌也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタMoS2膜のCl2プラズマ処理によるシート抵抗低減, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 今井 慎也, 濱田 昌也, 五十嵐 智, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. 硫化プロセスにおけるスパッタMoS2膜質向上の重要性, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 松浦 賢太朗, 濱田 昌也, 坂本 拓朗, 谷川 晴紀, 宗田 伊理也, 石原 聖也, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. F.G.アニールによるMoSi2/スパッタMoS2界面コンタクト抵抗低減, 第66回応用物理学会春期学術講演会, Mar. 2019.
• 谷川 晴紀, 松浦 賢太朗, 濱田 昌也, 坂本 拓朗, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 五十嵐 智, 松浦 賢太朗, 濱田 昌也, 谷川 晴紀, 坂本 拓朗, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. 保護膜を通したフォーミングガスアニールによるスパッタMoS2 膜の結晶性改善, 第79回応用物理学会秋季学術講演会, Sept. 2018.

学位論文

• 2D-Channel FET based on High-Mobility TMDC-Film Formation with PVD Method using Crystal-Quality Improvement Process and Side-Contact Architecture,  Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2022/03/26,   
• 2D-Channel FET based on High-Mobility TMDC-Film Formation with PVD Method using Crystal-Quality Improvement Process and Side-Contact Architecture,  Thesis,  Doctor (Engineering),  Tokyo Institute of Technology,  2022/03/26, 
• 2D-Channel FET based on High-Mobility TMDC-Film Formation with PVD Method using Crystal-Quality Improvement Process and Side-Contact Architecture,  Outline,  Doctor (Engineering),  Tokyo Institute of Technology,  2022/03/26,   
• 2D-Channel FET based on High-Mobility TMDC-Film Formation with PVD Method using Crystal-Quality Improvement Process and Side-Contact Architecture,  Exam Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2022/03/26,   

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