論文

• Zhang Ruixian, Ho Hoang Huy, Takanori Shirokura, Pham Nam Hai, Quang Le, Brian York, Cherngye Hwang, Xiaoyong Liu, Michael Gribelyuk, Xiaoyu Xu, Son Le, Maki Maeda, Tuo Fan, Yu Tao, Hisashi Takano. High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers, Applied Physics Letters, Vol. 124, pp. 072402, Feb. 2024.
• Ho Hoang Huy, Zhang Ruixian, Takanori Shirokura, Shigeki Takahashi, Yoshiyuki Hirayama, Pham Nam Hai. Integration of BiSb Topological Insulator and CoFeB/MgO With Perpendicular Magnetic Anisotropy Using an Oxide Interfacial Layer for Ultralow Power SOT-MRAM Cache Memory, IEEE Transactions on Magnetics, Vol. 59, No. 11, pp. 3400905, May 2023.
• Ho Hoang Huy, Julian Sasaki, Nguyen Huynh Duy Khang, Pham Nam Hai, Q. LE, B. YORK, C. Hwang, X. LIU, M. GRIBELYUK, X. XU, S. LE, M. HO, H. TAKANO. Large inverse spin Hall effect in BiSb topological insulator for 4 Tb/in2 magnetic recording technology, Applied Physics Letters, Vol. 122, pp. 052401, Jan. 2023.
• H. H. Huy, J. Sasaki, N. H. D. Khang, S. Namba, P. N. Hai, Q. Le, B. York, C. Hwang, X. Liu, M. Gribelyuk, X. Xu, S. Le, R. Nagabhirava, M. Ho, H. Takano. Large spin Hall angle in sputtered BiSb topological insulator on top of various ferromagnets with in-plane magnetization for SOT reader application, IEEE Transactions on Magnetics, Vol. 59, pp. 3000904/1-4, Oct. 2022.
• J. Sasaki, H. H. Huy, N. H. D. Khang, P. N. Hai, Q. Le, B. York, X. Liu, S. Le, C. Hwang, M. Ho, H. Takano. Improvement of the effective spin Hall angle by inserting an interfacial layer in sputtered BiSb topological insulator (bottom)/ferromagnet with in-plane magnetization, IEEE Transactions on Magnetics, Vol. 58, pp. 3200404, Mar. 2022.
• Tuo Fan, Nguyen Huynh Duy Khang, Takanori Shirokura, Ho Hoang Huy, Pham Nam Hai. Low power spin–orbit torque switching in sputtered BiSb topological insulator/perpendicularly magnetized CoPt/MgO multilayers on oxidized Si substrate, Applied Physics Letters, Vol. 119, pp. 082403, Aug. 2021.

国際会議発表 (査読有り)

• H. H. Huy, J. Sasaki, N. H. D. Khang, S. Namba, P. N. Hai, Q. Le, B. York, C. Hwang, X. Liu, M. Gribelyuk, X. Xu, S. Le, M. Ho, H. Takano. Large inverse spin Hall effect in BiSb topological insulator for beyond 4 TB/In2 magnetic recording technology, IEEE Magnetics Society Summer School 2024, June 2024.
• Z. Ruixian, H. H. Huy, Q. Le, B. York, C. Hwang, X. Liu, M. Gribelyuk, X. Xu, S. Le, M. Maeda, F. Tuo, Y. Tao, H. Takano, T. Shirokura, P. N. Hai. High spin Hall angle in heterostructures of BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers, The 22nd International Conference on Magnetism (ICM2024), June 2024.
• Ho Hoang Huy, Zhang Ruixian, Takanori Shirokura, Shigeki Takahashi, Yoshiyuki Hirayama, Pham Nam Hai. Large spin Hall effect in BiSb topological insulator/CrOx/CoFeB/MgO with perpendicular magnetic anisotropy for ultralow power SOT-MRAM, The 8th International Conference on Applied & Engineering Physics (CAEP-8), Oct. 2023.
• B.R. York, Q. Le, X. Liu, S. Okamura, C. Hwang, M.A. Gribelyuk, S. Le, J. Liu, R. Simmons, M. Maeda, F. Tuo, Y. Tao, J. Ohno, H. Takano, P.N. Hai, H. H. Huy, S. Namba. (Invited) High Thermal Reliability and High Spin Hall Angle Observed in SOT-Reader Thin Films Using BiSbX Topological Insulators, TMRC 2023, July 2023.
• Ho Hoang Huy, Zhang Ruixian, Takanori Shirokura, Shigeki Takahashi, Yoshiyuki Hirayama, Pham Nam Hai. Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power spin-orbit torque magnetic memory, Intermag 2023, May 2023.
• Ho Hoang Huy, J. SASAKI, N. H. D. KHANG, Pham NAM HAI, Q. LE, B. YORK, C. Hwang, X. LIU, M. GRIBELYUK, X. XU, S. LE, M. HO, H. TAKANO. Giant inverse spin Hall effect in BiSb topological insulator for SOT reader, MMM 2022, Oct. 2022.
• B. York, P. Hai, Q. Le, C. Hwang, S. Okamura, M. Gribelyuk, X. Xu, K. Nguyen, H. Ho, J. Sasaki, X. Liu, S. Le, M. Ho, H. Takano. High Spin Hall Angle doped Topological Insulators BiSbX using novel high resistive growth and migration barrier layers, The 33rd Magnetic Recording Conference (TMRC), Aug. 2022.
• H. H. Huy, J. Sasaki, N. H. D. Khang, S. Namba, P. N. Hai, Q. Le, B. York, C. Hwang, X. Liu, M. Gribelyuk, X. Xu, S. Le, R. Nagabhirava, M. Ho, H. Takano. Large spin Hall angle in sputtered BiSb topological insulator on top of various ferromagnets with in-plane magnetization for SOT reader application, The 33rd Magnetic Recording Conference (TMRC), Aug. 2022.
• B. York, P. N. Hai, Q. Le, C. Hwang, Nguyen H.D. Khang, Ho Hoang Huy, J. Sasaki, X. Liu, S. Le, M. Ho, H. Takano. The Practical Material Challenges Involved in using the Topological Insulator BiSb in a Spin Transfer Device, The 32nd Magnetic Recording Conference (TMRC 2021), Aug. 2021.
• J. Sasaki, Ho Hoang Huy, Nguyen H.D. Khang, P. N. Hai, Q. Le, B. York, X. Liu, S. Le, C. Hwang, M. Ho, H. Takano. High spin Hall angle in sputtered BiSb topological insulator (bottom)/ ferromagnet with in-plane magnetization on sapphire substrates, The 32nd Magnetic Recording Conference (TMRC 2021), Aug. 2021.

国際会議発表 (査読なし・不明)

• Ho Hoang Huy, J. SASAKI, N. H. D. KHANG, Pham NAM HAI, Q. LE, B. YORK, C. Hwang, X. LIU, M. GRIBELYUK, X. XU, S. LE, M. HO, H. TAKANO. Giant inverse spin Hall effect in BiSb topological insulator for 4 Tbpsi magnetic recording technology, VANJ Conference 2022, Nov. 2022.

国内会議発表 (査読なし・不明)

• H. H. Huy, L. Wentao, S. Takahashi, Y. Hirayama, Y. Kato, P. N. Hai. Spin Hall effect in annealed BiSb topological thin films deposited on Si/SiOx substrates, The 85th JSAP Autumn Meeting 2024, Sept. 2024.
• L. Wentao, H. H. Huy, S. Takahashi, Y. Hirayama, Y. Kato, P. N. Hai. Growth and evaluation of highly textured BiSb(001) topological insulator on Si/SiOx, The 85th JSAP Autumn Meeting 2024, Sept. 2024.
• Ruixian Zhang, Ho Hoang Huy, Takanori Shirokura, Pham Nam Hai, Quang Le, Brian R. York, Cherngye Hwang, Xiaoyong Liu, Xiaoyu Xu, Son Le, Michael Gribelyuk, Hisashi Takano, Maki Maeda, Fan Tuo, Yu Tao. High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers, The 71th JSAP Spring Meeting 2024, Mar. 2024.
• H. H. Huy, J. Sasaki, N. H. D. Khang, S. Namba, P. N. Hai. Large inverse spin Hall effect in BiSb topological insulator and application to SOT magnetic sensor, CREST領域会議 「トポロジカル材料科学の構築による革新的材料・デバイスの創出」, Jan. 2024.
• Ho Hoang Huy, R. Zhang, T. Shirokura, S. Takahashi, Y. Hirayama, Pham Nam Hai. Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power SOT-MRAM cache memory, 84th JSAP Autumn meeting, Sept. 2023.
• Ho Hoang Huy, J. SASAKI, N. H. D. KHANG, Pham NAM HAI, Q. LE, B. YORK, X. LIU, M. GRIBELYUK, X. XU, S. LE, M. HO, H. TAKANO. Giant inverse spin Hall effect in BiSb topological insulator-based SOT reader, 83th JSAP Autumn meeting, Sept. 2022.

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