論文

• Takehiko Kikuchi, Takuo Hiratani, Naoki Fujiwara, Naoko Inoue, Toshiyuki Nitta, Moataz Eissa, Takuya Mitarai, Yuning Wang, Yoshitaka Oiso, Nobuhiko Nishiyama, Hideki Yagi. III–V gain region/Si waveguide hybrid lasers with InP-based two-storied ridge structure by direct bonding technology, Japanese Journal of Applied Physics, Vol. 61, Number 5, 052002, May 2022.
• Yuning Wang, Kumi Nagasaka, Takuya Mitarai, Yoshitaka Oiso, Tomohiro Amemiya, Nobuhiko Nishiyama. High-quality InP/SOI heterogeneous material integration by room temperature surface-activated bonding for hybrid photonic devices, Japanese Journal of Applied Physics, Japanese Applied Physics Society, Vol. 59, No. 5, p. 052004, Apr. 2020.  公式リンク  
  
• hibiki kagami, tomohiro amemiya, Makoto Tanaka, Yuning Wang, Nobuhiko nishiyama, Shigehisa Arai. Metamaterial infrared refractometer for determining broadband complex refractive index, Optics Express, Vol. 27, No. 20, pp. 28879-28890, Sept. 2019.

国際会議発表 (査読有り)

• Yutaka Makihara, Nobuhiko Nishiyama, Takehiko Kikuchi, Takuo Hiratani, Naoki Fujiwara, Naoko Inoue, Toshiyuki Nitta, Moataz Eissa, Takuya Mitarai, Yuning Wang, Yoshitaka Oiso, Tomohiro Amemiya, Hideki Yagi. Characteristics of GaInAsP/SOI Hybrid Semiconductor Optical Amplifier with InP-based Two-storied Ridge Structure, 27th Optoelectronics and Communication Conference, July 2022.
• weicheng Fang, Yuning Wang, Tomohiro Amemiya, Nobuhiko Nishiyama. InP/SiO2/Si Surface Activated Bonding assisted by Si nano-film, 9th International Symposium on Photonics and Electronics Convergence, Nov. 2019.
• Yuning Wang, Takuya Mitarai, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai. Investigation of InP/Si bonding condition for optimizing Photoluminescence property by Surface Activated Bonding based on Fast Atom Beam, Compound Semiconductor Week 2019: 31st International Conference on Indium Phosphide and Related Materials (IPRM 2019), May 2019.
• Yuning Wang, Kumi Nagasaka, Junichi Suzuki, Liu Bai, Takuya Mitarai, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai. Photoluminescence properties of GaInAs/InP layers by Ar fast atom beam for room temperature surface activated bonding toward hybrid PIC, Compound Semiconductor Week 2018, May 2018.

国内会議発表 (査読なし・不明)

• 平谷拓生, 藤原直樹, 菊地健彦, 新田俊之, MOATAZShaher Anis Mahmoud Eissa, 王雨寧, 槇原豊, 西山伸彦, 八木英樹. 二段リッジ構造を有するIII-V/Siハイブリッドレーザの室温連続動作, 2020年電子情報通信学会総合大会, Mar. 2020.
• 菊地健彦, 藤原 直樹, 平谷 拓生, 新田 俊之, モータズ エイッサ, 王 雨寧, 槇原 豊, 西山 伸彦, 八木 英樹. III-V/Si直接接合構造を有するリッジ型レーザ特性のSi導波路幅依存性, 第67回応用物理学会春季学術講演会, Feb. 2020.
• Fang Weicheng, 王 雨寧, 雨宮 智宏, 西山 伸彦. Investigation of bonding strength between (InP, Si)/SiO2 and Si by Surface Activated Bonding based on Fast Atom Beam assisted by Si nano-film, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 王 雨寧, MOATAZ Shaher Anis Mahmoud Eissa, 御手洗 拓矢, 雨宮 智宏, 西山 伸彦. Investigation of Photoluminescence property of InP/SOI wafer after bonding experiment using Surface Activated Bonding based on Fast Atom Beam, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 王 雨寧, 御手洗 拓矢, 雨宮 智宏, 西山 伸彦, 荒井 滋久. Investigation of InP/Si bonding condition for suppressing degradation of Photoluminescence property using Surface Activated Bonding, 第66回応用物理会春季学術講演会, Mar. 2019.
• 御手洗 拓矢, MOATAZShaher Anis Mahmoud Eissa, 宮嵜 隆之, 立花 文人, 白 柳, 王 雨寧, 雨宮 智宏, 西山 伸彦, 荒井 滋久. Si曲げ導波路による方向性光結合器を用いた広帯域ループミラーの作製, 電子情報通信学会 光エレクトロニクス研究会, Dec. 2018.
• Yuning Wang, Takuya Mitarai, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai. Gas Species Comparison of Fast Atom Beam Irradiation to Photoluminescence Properties of GaInAs/InP layers for Surface Activated Bonding, The 79th JSAP Autumn Meeting,2018, Extended abstracts of the 79th JSAP autumn meeting, The Japan Society of Applied Physics, Sept. 2018.
• 永坂久美, 鈴木純一, 御手洗拓矢, 王 雨寧, 雨宮智宏, 西山伸彦, 荒井滋久. ハイブリッド集積に向けたAr-FAB表面活性化接合法のInP/Si接合特性の検討, 応用物理学会 春季学術講演会, Mar. 2018.

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