論文

• Tsunaki Takahashi, Shunri Oda, Ken Uchida. Methodology for Evaluating Operation Temperatures of Fin-Type Field-Effect Transistors Connected by Interconnect Wires, Japanese Journal of Applied Physics, Vol. 52, pp. 064203 (7 pages), May 2013.
• Tsunaki Takahashi, Nobuyasu Beppu, Kunro Chen, Shunri Oda, Ken Uchida. Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors, Japanese Journal of Applied Physics, Vol. 52, pp. 04CC03 (6 pages), Feb. 2013.
• N. Kadotani, T. Ohashi, T. Takahashi, S. Oda, K. Uchida. Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors, Japanese Journal of Applied Physics, Vol. 50, pp. 094101 (7 pages), Sept. 2011.
• Tomohiro Kambara, Tetsuo Kodera, Tsunaki Takahashi, Gento Yamahata, Ken Uchida, Shunri Oda. Simulation study of charge modulation in coupled quantum dots in silicon, Japanese Journal of Applied Physics, Vol. 50, 04DJ05, Apr. 2011.
• T. Takahashi, T. Kodera, S. Oda, K. Uchida. Experimental study on subband structures and hole transport in (110) Si p-type metal-oxide-semiconductor field-effect transistors under high magnetic field, Journal of Applied Physics, Vol. 109, pp. 034505, Feb. 2011.
• N. Kadotani, T. Takahashi, T. Ohashi, S. Oda, K. Uchida. Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1E18 cm-3 and silicon-on-insulator thickness of less than 10 nm, Journal of Applied Physics, Vol. 110, pp. 034502. (7 pages), 2011.
• 高橋綱己, 山端元音, 小木純, 小寺哲夫, 小田俊理, 内田建. 「強磁場印加による(110)pMOSFETサブバンド構造の直接的観測」, 『応用物理学会シリコンテクノロジー分科会研究集会予稿集』, 応用物理学会, No. 118, pp. 12-15, 2010.

国際会議発表 (査読有り)

• Aya Shindome, Tsunaki Takahashi, Shunri Oda, Ken Uchida. Experimental Study on SET/RESET Conditions for Graphene ReRAM, Solid State Devices and Materials Conference, Sept. 2013.
• T. Ohashi, T. Takahashi, T. Kodera, S. Oda, K. Uchida. Experimental Observation of Record-high Electron Mobility of Greater than 1100 cm2V-1s-1 in Unstressed Si MOSFETs and Its Physical Mechanisms, 2012 International Conference on Solid State Devices and Materials (SSDM 2012), Sept. 2012.
• N. Beppu, T. Takahashi, S Oda, K. Uchida. Experimental Study of Self-Heating Effect (SHE) in SOI MOSFETs: Accurate Understanding of Temperatures During AC Conductance Measurement, Proposals of 2ω Method and Modified Pulsed IV, IEDM 2012, pp. 641-644, 2012.
• T. Takahashi, K.Chen, N.Beppu, S. Oda, K. Uchida. Thermal-Aware Device Design of Nanoscale Bulk/SOI FinFETs: Suppression of Operation Temperature and Its Variability, IEDM2011, 34.6, Dec. 2011.
• T. Ohashi, T. Takahashi, N. Beppu, S. Oda, K. Uchida. Experimental Evidence of Increased Deformation Potential at MOS Interface and its Impact on Characteristics of ETSOI FETs, IEDM2011, No. 16.4, Dec. 2011.
• Teruyuki Ohashi, Naotoshi Kadotani, Tsunaki Takahashi, Shunri Oda, Ken Uchida. Mechanisms of electron mobility enhancement in junctionless SOI MOSFETs, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-15, Oct. 2011.
• Tsunaki Takahashi, Tetsuo Kodera, Shunri Oda, Ken Uchida. Direct Observation of Subband Structures in (110) Si pMOSFETs under High Magnetic Field and Its Impact on Hole Transport, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-14, Oct. 2011.
• T. Takahashi, N. Beppu, K. Chen, S. Oda, K. Uchida. Thermal-Aware Device Design of Nanoscale Bulk/SOI FinFETs: Suppression of Operation Temperature and Its Variability, IEDM 2011, pp. 809-812, 2011.
• T. Ohashi, T. Takahashi, N. Beppu, S. Oda, K. Uchida. Experimental Evidence of Increased Deformation Potential at MOS Interface and Its Impact on Characteristic of ETSOI FETs, IEDM 2011, pp. 390-393, 2011.
• N. Kadotani, T. Takahashi, K. Chen, T. Kodera, S. Oda, K. Uchida. Anomalous Electron Mobility in Extremely-Thin SOI (ETSOI) Diffusion Layers with SOI Thickness of Less Than 10 nm and High Doping Concentration of Greater Than 1×1018cm-3, EDM2010, Dec. 2010.
• T. Takahashi, G. Yamahata, J. Ogi, T. Kodera, S. Oda, K. Uchida. Direct Observation of Subband Structures in (110) pMOSFETs under High Magnetic Field: Impact of Energy Split Between Bands and Effective Masses on Hole Mobility, IEDM2009, Dec. 2009.

国内会議発表 (査読なし・不明)

• 新留 彩, 別府伸耕, 高橋綱己, 小田俊理, 内田 建. 架橋・非架橋構造のグラフェン抵抗変化型メモリの書込・消去特性, 第60回応用物理学会春季学術講演会, 2013.
• 高橋綱己, 別府伸耕, 小田俊理, 内田建. 熱配慮設計によるFinFETアナログ特性の最適化, 第60回応用物理学会春季学術講演会, 2013.
• 大橋輝之, 高橋綱己, 内田 建, 小田俊理. MOS 界面における変形ポテンシャルの上昇, 第59回応用物理学関係連合講演会, 17a-A1-3, Mar. 2012.
• 高橋綱己, 別府伸耕, 陳 君璐, 小田俊理, 内田 建. デバイスシミュレータを用いたナノスケールBulk/SOI FinFET の熱設計, 第59回応用物理学関係連合講演会, 17a-A1-9, Mar. 2012.
• 黒澤裕也, 角谷直哉, 高橋綱己, 大橋輝之, 小田俊理, 内田 建. ナノ薄膜SOI における不純物のイオン化エネルギー増大, 第59回応用物理学関係連合講演会, 17a-A1-4, Mar. 2012.
• 高橋綱己, 別府伸耕, 小田俊理, 内田 建. デバイスシミュレータを用いたナノスケールBulk/SOI FinFET熱等価回路モデルの導出, 第73回応用物理学会学術講演会, 2012.
• 大橋輝之, 高橋綱己, 小寺哲夫, 小田俊理, 内田 建. ユニバーサル曲線を超えるMOSFET移動度の観測とその物理的起源の解明, 秋季 第73回応用物理学会学術講演会, 2012.
• 大橋輝之, 高橋綱己, 小寺哲夫, 小田俊理, 内田 建. 低温・強磁場環境を利用した極薄膜SOI中の変形ポテンシャルの評価, 第72回応用物理学会学術講演会, pp. 2a-J-11, Aug. 2011.
• 角谷直哉, 高橋綱己, 大橋輝之, 小寺哲夫, 小田俊理, 内田 建. 高不純物濃度のETSOI(Extremely-Thin SOI) 拡散層における移動度とSOI 膜厚および不純物濃度の関係, 第58回応用物理学関係連合講演会, Mar. 2011.
• 角谷直哉, 高橋綱己, 小寺哲夫, 小田俊理, 内田 建. pn接合の無い極薄膜SOIトランジスタの作製と電気特性評価, 第71回応用物理学会学術講演会, 16a-ZE-2, Sept. 2010.
• 高橋綱己, 山端元音, 小木 純, 小寺哲夫, 小田俊理, 内田 建. 強磁場印加による(110) pMOSFETサブバンド構造の直接的観測, 第57回応用物理学関係連合講演会, 18a-B-2, Mar. 2010.

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