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YOUNGSUKKIM 研究業績一覧 (8件)
論文
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Yi-Chieh Tsai,
Chia-Hsuan Lee,
Hsin-Chi Chang,
Jui-Han Liu,
Han-Wen Hu,
Hiroyuki Ito,
Young Suk Kim,
Takayuki Ohba,
Kuan-Neng Chen.
Electrical Characteristics and Reliability of Wafer-on-Wafer (WOW) Bumpless Through Silicon Via,
IEEE Transactions on Electron Devices,
Vol. 68,
No. 7,
pp. 3520 - 3525,
July 2021.
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Yi-Lun Yang,
Hiroyuki Ito,
Kim Youngsuk,
Takayuki Ohba,
Kuan-Neng Chen.
Evaluation of Metal/Polymer Adhesion and Highly Reliable Four-Point Bending Test Using Stealth Dicing Method in 3D Integration,
IEEE Transactions on Components, Packaging and Manufacturing Technology,
Jan. 2020.
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Yoriko Mizushima,
Youngsuk Kim,
Tomoji Nakamura,
Akira Uedono,
Takayuki Ohba.
Behavior of copper contamination on backside damage for ultra-thin silicon three dimensional stacking structure,
Microelectronic Engineering,
ELSEVIER,
Vol. 167,
pp. 23-31,
Jan. 2017.
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Mizushima Yoriko,
Kim Youngsuk,
Nakamura Tomoji,
Sugie Ryuichi,
Hashimoto Hideki,
Uedono Akira,
Ohba Takayuki.
Impact of back-grinding-induced damage on Si wafer thinning for three-dimensional integration,
Jpn. J. Appl. Phys.,
Institute of Physics,
Vol. 53,
No. 5,
Apr. 2014.
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Noriyuki Taoka,
Osamu Nakatsuka,
Yoriko Mizushima,
Hideki Kitada,
Young Suk Kim,
Tomoji Nakamura,
Takayuki Ohba,
Shigeaki Zaima.
Observation of lattice spacing fluctuation and strain undulation around through-Si vias in wafer-on-wafer structures using X-ray microbeam diffraction,
Japanese Journal of Applied Physics,
Volume 53,
Apr. 2014.
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Akira Uedono,
Yoriko Mizushima,
Youngsuk Kim,
Tomoji Nakamura,
Takayuki Ohba,
Nakaaki Yoshihara,
Nagayasu Oshima,
Ryoichi Suzuki.
Vacancy-type defects induced by grinding of Si wafers studied by monoenergetic,
Journal of Applied Physics,
AIP,
Vol. 116,
134501,
2014.
国際会議発表 (査読有り)
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Yi-Lun Yang,
Jia-Ling Liu,
Guan Wei Chen,
Shoichi Kodama,
Kyosuke Kobinata,
Kuan-Neng Chen,
Hiroyuki Ito,
Kim Youngsuk,
Takayuki Ohba.
Highly Reliable Four-Point Bending Test Using Stealth Dicing Method for Adhesion Evaluation,
International Conference on Electronics Packaging,
pp. 28-31,
Apr. 2019.
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Y. S. Kim,
S. Kodama,
Y. Mizushima,
T. Nakamura,
N. Maeda,
K. Fujimoto,
A. Kawai,
T. Ohba.
Warpage-free Ultra-Thinning ranged from 2 to 5-μm for DRAM Wafers and Evaluation of Devices Characteristics,
2016 IEEE 66th Electronic Components and Technology Conference,
Electronic Components and Technology Conference (ECTC), 2016 IEEE 66th,
IEEE,
pp. 1471-1476,
June 2016.
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