論文

• Yuhao Shi, Masatake Tsuji, Hanjun Cho, Shigenori Ueda, Junghwan Kim, Hideo Hosono. Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway, ACS NANO, 18, Mar. 2024.
• Shingo Urata, Nobuhiro Nakamura, Junghwan Kim, Hideo Hosono. Role of hydrogen-doping for compensating oxygen-defect in non-stoichiometric amorphous In2O3-x: Modeling with a machine-learning potential, Journal of Applied Physics, Sept. 2023.
• Masatake Tsuji, Masato Sasase, Soshi Iimura, Junghwan Kim, Hideo Hosono. Room-Temperature Solid-State Synthesis of Cs3Cu2I5 Thin Films and Formation Mechanism for Its Unique Local Structure, May 2023.
• Hironobu Sugiyama, Nobuhiro Nakamura, Satoru Watanabe, Junghwan Kim, Masaaki Kitano, Hideo Hosono. Electronic Promotion of Methanol Synthesis over Cu-Loaded ZnO-Based Catalysts, J. Phys. Chem. Lett., Vol. 14, pp. 1259-1264, Jan. 2023.
• Yamasaki Tomoyuki, Iimura Soshi, Kim Junghwan, Hosono Hideo. Extremely Shallow Valence Band in Lanthanum Trihydride, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, Jan. 2023.
• Keisuke Ide, Naoto Watanabe, Takayoshi Katase, Masato Sasase, Junghwan Kim, Shigenori Ueda, Koji Horiba, Hiroshi Kumigashira, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Low-temperature-processable amorphous-oxide-semiconductor-based phosphors for durable light-emitting diodes, Appl. Phys. Lett., Vol. 121, pp. 192108, Nov. 2022.
• Shi Yuhao, Shiah Yu-Shien, Sim Kihyung, Sasase Masato, Kim Junghwan, Hosono Hideo. High-performance a-ITZO TFTs with high bias stability enabled by self-aligned passivation using a-GaOx, Nov. 2022.
• Kihyung Sim, Takuya Nakao, Masato Sasase, Soshi Iimura, Junghwan Kim, Hideo Hosono. 18-Crown-6 Additive to Enhance Performance and Durability in Solution-Processed Halide Perovskite Electronics, Small, Wiley, p. 2202298, July 2022.  公式リンク  
  
• Masatake Tsuji, Soshi Iimura, Junghwan Kim, Hideo Hosono. Hole Concentration Reduction in CuI by Zn Substitution and its Mechanism: Toward Device Applications, ACS Appl. Mater. Interfaces, July 2022.
• Tomoyuki Yamasaki, Ryosei Takaoka, Soshi Iimura, Junghwan Kim, Hidenori Hiramatsu, Hideo Hosono. Characteristic Resistive Switching of Rare-Earth Oxyhydrides by Hydride Ion Insertion and Extraction, ACS Applied Materials and Interfaces, Vol. 14, No. 17, pp. 19766–19773, Apr. 2022.  公式リンク  
  
• Junghwan Kim, Yu-Shien Shiah, Kihyung Sim, Soshi Iimura, Katsumi Abe, Masatake Tsuji, Masato Sasase, Hideo Hosono. High-Performance P-Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D–3D Core–Shell Structure, Advanced Science, Dec. 2021.  公式リンク  
  
• Yu-Shien Shiah, Kihyung Sim, Yuhao Shi, Katsumi Abe, Shigenori Ueda , Masato Sasase, Junghwan Kim , Hideo Hosono. Mobility–stability trade-off in oxide thin-film transistors, Nature Electronics, Vol. 4, pp. 800-807, Nov. 2021.  公式リンク  
  
• Yu-Shien Shiah, Kihyung Sim, Shigenori Ueda, Junghwan Kim, Hideo Hosono. Unintended Carbon-Related Impurity and Negative Bias Instability in High-Mobility Oxide TFTs, IEEE Electron Device Letters, Vol. 42, pp. 1319 - 1322, July 2021.  公式リンク  
  
• Hye-Mi Kim, Su-Hwan Choi, Hyun Jun Jeong, Jung-Hoon Lee, Junghwan Kim, Jin-Seong Park. Highly Dense and Stable p-Type Thin-Film Transistor Based on Atomic Layer Deposition SnO Fabricated by Two-Step Crystallization, ACS Applied Materials and Interfaces, June 2021.  公式リンク  
  
• Cheol Hee Choi, Taikyu Kim, Shigenori Ueda, Yu-Shien Shiah, Hideo Hosono, Junghwan Kim, Jae Kyeong Jeong. High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film, ACS Applied Materials and Interfaces, ACS Publications, June 2021.  公式リンク  
  
• Ao Liu, Huihui Zhu, Myung-Gil Kim, Junghwan Kim, Yong-Young Noh. Engineering Copper Iodide (CuI) for Multifunctional p-TypeTransparent Semiconductors and Conductors, Advanced Science, p. 2100546, May 2021.  公式リンク  
  
• Xianzhe Liu, Jianhua Zhang, Yu-Shien Shiah, Junghwan Kim, Honglong Ning, Kuankuan Lu, Xiuhua Cao, Wei Xu, Rihui Yao, Junbiao Peng. Implementing Room-Temperature Fabrication of Flexible Amorphous Sn–Si–O TFTs via Defect Control, Advanced Materials Interfaces, Wiley, p. 2002193, Feb. 2021.  公式リンク  
  
• Akira Saitoh, Katsuki Hayashi, Kota Hanzawa, Shigenori Ueda, Shiro Kawachi, Jun-ichi Yamaura, Keisuke Ide, Junghwan Kim, Gregory Tricot, Satoru Matsuishi, Kazuki Mitsui, Tatsuki Shimizu, Masami Mori, Hideo Hosono, Hidenori Hiramatsu. Origins of the coloration from structure and valence state of bismuth oxide glasses, J. NON-CRYST. SOLIDS., 560, 120720-1 - 120720-14, Feb. 2021.
• Hiroshi Mizoguchi, Sang-Won Park, Takayoshi Katase, Grigori V. Vajenine, Joonho Bang, Junghwan Kim, Hideo Hosono. Origin of metallic nature of Na₃N, J. Am. Chem. Soc., vol. 143, p. 69-72, Dec. 2020.
• Nuri On, Bo Kyoung Kim, Yerin Kim, Eun Hyun Kim, Jun Hyung Lim, Hideo Hosono, Junghwan Kim, Hoichang Yang, Jae Kyeong Jeong. Boosting carrier mobility and stability in indium–zinc–tin oxide thin-film transistors through controlled crystallization, Scientific Reports, Vol. 10, p. 18868, Nov. 2020.
• Jiangwei Li, Takeshi Inoshita, Tianping Ying, Atsushi Ooishi, Junghwan Kim, Hideo Hosono. A Highly Efficient and Stable Blue‐Emitting Cs5Cu3Cl6I2 with a 1D Chain Structure, Advanced Materials, 2002945, Aug. 2020.  公式リンク  
  
• Taehwan Jun, Taketo Handa, Kihyung Sim, Soshi Iimura, Masato Sasase, Junghwan Kim, Yoshihiko Kanemitsu, Hideo Hosono. One-step solution synthesis of white-light emitting films via dimensionality control of the Cs–Cu–I system, APL Materials, AIP, Vol. 7, p. 111113, Nov. 2019.  公式リンク  
  
• Seong Gon Park, Kyu Hyoung Lee, Jae-Hoon Lee, Geukchan Bang, Junghwan Kim, Hee Jung Park, Min Suk Oh, Suyoun Lee, Young-Hoon Kim, Young-Min Kim, Hideo Hosono, Joonho Bang, Kimoon Lee. Improved polaronic transport under a strong Mott-Hubbard interaction in Cu-substituted NiO, Inorganic Chemistry Frontiers, Nov. 2019.  公式リンク  
  
• Jiazhen Sheng, TaeHyun Hong, Hyun-Mo Lee, KyoungRok Kim, Masato Sasase, Junghwan Kim, Hideo Hosono, Jin-Seong Park. Amorphous IGZO TFT with High Mobility of ~70 cm2/Vs via Vertical Dimension Control using PEALD, ACS applied materials & interfaces, American Chemical Society (ACS), Vol. 11, No. 43, pp. 40300-10309, Oct. 2019.  公式リンク  
  
• Kihyung Sim, Taehwan Jun, Joonho Bang, Hayato Kamioka, Junghwan Kim, Hidenori Hiramatsu, Hideo Hosono. Performance boosting strategy for perovskite light-emitting diodes, Applied Physics Reviews, American Institute of Physics (AIP), Vol. 6, p. 031402, July 2019.  公式リンク  
  
• Keisuke Ide, Yuki Futakado, Naoto Watanabe, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Transition Metal‐Doped Amorphous Oxide Semiconductor Thin‐Film Phosphor, Chromium‐Doped Amorphous Gallium Oxide, physica status solidi (a), Vol. 216, no. 5, p. 1800198, Mar. 2019.  公式リンク  
  
• Naoto Watanabe, Keisuke Ide, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Multiple Color Inorganic Thin‐Film Phosphor, RE‐Doped Amorphous Gallium Oxide (RE = Rare Earth: Pr, Sm, Tb, and Dy), Deposited at Room Temperature, physica status solidi (a), Vol. 216, No. 5, p. 1700833, Mar. 2019.  公式リンク  
  
• Hiroshi Mizoguchi, Sang-Won Park, Kazuhisa Kishida, Masaaki Kitano, Junghwan Kim, Masato Sasase, Takashi Honda, Kazutaka Ikeda, Toshiya Otomo, Hideo Hosono. Zeolitic Intermetallics: LnNiSi (Ln = La–Nd), Journal of the American Chemical, American Chemical Society, Vol. 141, No. 8, pp. 3376–3379, Feb. 2019.  公式リンク  
  
• Junghwan Kim, Joonho Bang, Nobuhiro Nakamura, Hideo Hosono. Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors, APL Materials, AIP, Vol. 7, No. 2, p. 022501, Feb. 2019.  公式リンク  
  
• Junghwan Kim, Koji Yamamoto, Soshi Iimura, Shigenori Ueda, Hideo Hosono. Electron Affinity Control of Amorphous Oxide Semiconductors and Its Applicability to Organic Electronics, Advanced Materials Interfaces, Wiley, Vol. 5, No. 23, p. 1801307, Dec. 2018.  公式リンク  
  
• Biao Wan, Yangfan Lu, Zewen Xiao, Yoshinori Muraba, Junghwan Kim, Dajian Huang, Lailei Wu, Huiyang Gou, Jingwu Zhang, Faming Gao, Ho-kwang Mao, HIDEO HOSONO. Identifying quasi-2D and 1D electrides in yttrium and scandium chlorides via geometrical identification, npj Comput. Matter, Vol. 4, No. 77, Dec. 2018.  公式リンク  
  
• Taehwan Jun, Kihyung Sim, Soshi Iimura, Masato Sasase, Hayato Kamioka, Junghwan Kim, Hideo Hosono. Lead-Free Highly Efficient Blue-Emitting Cs3Cu2I5 with 0D Electronic Structure, Advanced Materials, Wiley, Vol. 30, No. 43, p. 1804547, Sept. 2018.  公式リンク  
  
• Keisuke Ide, Yuki Futakado, Naoto Watanabe, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Transition metal-doped amorphous oxide semiconductor thin film phosphor, chromium-doped amorphous gallium oxide, Phys. Status Solidi A, 216, 1800198, Aug. 2018.
• Hongsheng Yang, Junghwan Kim, Koji Yamamoto, Xing Xing, Hideo Hosono. Surface tailoring of newly developed amorphous Zn-Si-O thin films as electron injection/transport layer by plasma treatment: Application to inverted OLEDs and hybrid solar cells, Applied Surface Science, Vol. 434, pp. 995-1000, Mar. 2018.  公式リンク  
  
• Taehwan Jun, Junghwan Kim, Masato Sasase, Hideo Hosono. Material Design of p-Type Transparent Amorphous Semiconductor, Cu–Sn–I, Advanced Materials, Wiley, Vol. 30, No. 12, 1706573, Mar. 2018.  公式リンク  
  
• Nobuhiro Nakamura, Junghwan Kim, Hideo Hosono. Material Design of Transparent Oxide Semiconductors for Organic Electronics: Why Do Zinc Silicate Thin Films Have Exceptional Properties?, Advanced Electronic Materials, Wiley, Vol. 4, No. 2, p. 1700352, Feb. 2018.  公式リンク  
  
• Takeshi Arai, Soshi Iimura, Junghwan Kim, Yoshitake Toda, Shigenori Ueda, Hideo Hosono. Chemical Design and Example of Transparent Bipolar Semiconductors, Journal of the American Chemical Society, Vol. 139, pp. 17175-17180, Nov. 2017.  公式リンク  
  
• Junjie Wang, Kota Hanzawa, Hidenori Hiramatsu, Junghwan Kim, Naoto Umezawa, Koki Iwanaka, Tomofumi Tada, Hideo Hosono. Exploration of Stable Strontium Phosphide-Based Electrides: Theoretical Structure Prediction and Experimental Validation, Journal of the American Chemical Society, American Chemical Society, Vol. 139, No. 44, pp. 15668–15680, Oct. 2017.
• Nobuhiro Nakamura, Junghwan Kim, Koji Yamamoto, Satoru Watanabe, Hideo Hosono. Organic light-emitting diode lighting with high out-coupling and reliability: Application of transparent amorphous ZnOeSiO2 semiconductor thick film, Organic Electronics, vol. 51, pp. 103-110, Sept. 2017.  公式リンク  
  
• Naoto Watanabe, Junghwan Kim, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Shigenori Ueda, Hideo Hosono, Toshio Kamiya. Amorphous Gallium Oxide as an Improved Host for Inorganic Light-Emitting Thin Film Semiconductor Fabricated at Room Temperature on Glass, ECS Journal of Solid State Science and Technology, Vol. 6, pp. 410-414, May 2017.  公式リンク  
  
• Hongsheng Yang, Junghwan Kim, Koji Yamamoto, Hideo Hosono. Efficient charge generation layer for tandem OLEDs: Bi-layered MoO3/ZnO-based oxide semiconductor, Organic Electronics, No. 46, pp. 133-138, Apr. 2017.  公式リンク  
  
• Dukyean Yoo, Wonjin Jeon, Junghwan Kim, Youjung Yang, Jungyol Jo. ZnO thin-film transistor grown by rf sputtering using Zn metal target and oxidizer pulsing, Journal of Ceramic Society of Japan, vol. 125, no. 3, pp. 112-117, Mar. 2017.  公式リンク  
  
• Junghwan Kim, Takumi Sekiya, Norihiko Miyokawa, Naoto Watanabe, Koji Kimoto, Keisuke Ide, Yoshitake Toda, Shigenori Ueda, Naoki Ohashi, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor, NPG Asia Materials, vol. 9, p. e359, Mar. 2017.  公式リンク  
  
• Hideo Hosono, Junghwan Kim, Yoshitake Toda, Toshio Kamiya, Satoru Watanabe. Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs, Proceedings of the National Academy of Sciences, vol. 114, no. 2, pp. 233-238, Jan. 2017.  公式リンク  
  
• Junghwan Kim, Norihiko Miyokawa, Takumi Sekiya, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O, Thin Solid Films, Vol. 614, pp. 84-89, Sept. 2016.  公式リンク  
  
• Junghwan KIM, Norihiko MIYOKAWA, Keisuke IDE, Hidenori HIRAMATSU, Hideo HOSONO, Toshio KAMIYA. Transparent amorphous oxide semiconductor thin film phosphor, In–Mg–O:Eu, J. Cerm. Soc. Jpn., Vol. 124, pp. 532-535, 2016.
• 渡邉暁, 伊藤和弘, 渡邉俊成, 中村伸宏, 宮川直通, 金正煥, 戸田喜丈, 神谷利夫, 細野秀雄. 非晶質C12A7エレクトライドの有機ELへの応用, 旭硝子研究報告, Vol. 66, pp. 26-31, 2016.
• Junghwan Kim, Norihiko Miyokawa, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor, AIP Advances, Vol. 6, p. 015106, 2016.
• Hao-Chun TANG, Junghwan KIM, Hidenori HIRAMATSU, Hideo HOSONO, Toshio KAMIYA. Fabrication and opto-electrical properties of amorphous (Zn,B)O thin film by pulsed laser deposition, J. Ceram. Soc. Jpn., Vol. 123, pp. 523-526, 2015.
• Junghwan KIM, Hidenori HIRAMATSU, Hideo HOSONO, Toshio KAMIYA. Effects of sulfur substitution in amorphous InGaZnO4: optical properties and first-principles calculations, J. Ceram. Soc. Jpn., Vol. 123, pp. 537-541, 2015.
• Junghwan Kim, Jun Meng, Donghoon Lee, Meng Yu, Dukyean Yoo, Doowon Kang, Jungyol Jo. ZnO Thin-Film Transistor Grown by rf Sputtering Using Carbon Dioxide and Substrate Bias Modulation, Journal of Nanomaterials, vol. 2014, p. 7, Nov. 2014.  公式リンク  
  
• Junghwan Kim, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Fabrication and characterization of ZnS:(Cu,Al) thin film phosphors on glass substrates by pulsed laser deposition Original Research Article, Thin Solid Films, Vol. 559, pp. 18-22, 2013.

著書

• 金 正煥, 細野 秀雄. 透明酸化物半導体の電極材料への応用 ―陰極への応用と実例―, 最先端の有機EL ―基礎物理・材料化学・デバイス応用と解析技術―, シーエムシー出版, Apr. 2017.

国際会議発表 (査読有り)

• Junghwan Kim, Hideo Hosono. Advantages of using Amorphous Oxide Semiconductors for Organic Electronics, 12th International Symposium on Organic Molecular Electronics (ISOME2022), May 2022.
• Junghwawn Kim, Kihyung Sim, Hideo Hosono, Junghwan Kim. 100,000 Times Foldable Perovskite Light-Emitting Diodes, MRM2021, Dec. 2021.
• Junghwawn Kim, Yu-Shien Shiah, Katsumi Abe, Hideo Hosono, Junghwan Kim. How to Obtain both High Mobility and High Stability in Oxide TFTs?, IUMRS-ICA 2021, Oct. 2021.
• Junghwan Kim, Kihyung Sim, Hideo Hosono. Dimensionality Issue of Recent Halide Perovskites and Strategy for High Performance Perovskite LEDs, TOEO-11, Oct. 2019.
• Junghwan Kim, Kihyung Sim, Hideo Hosono. Realization of High-Performance Perovskite LEDs using a Novel Device Architecture, iLIM-4, Oct. 2019.
• Junghwan Kim, Yu-Shien Shiah, Joonho Bang, Katsumi Abe, Hideo Hosono. Trade-off Relation between Mobility and Reliability in Oxide TFTs: Possible Origins and Experimental Demonstration, International Meeting on Information Display (IMID), Aug. 2019.
• Taehwan Jun, Kihyung Sim, Soshi Iimura, Masato Sasase, Hayato Kamioka, Junghwan Kim, Hideo Hosono. Pb-free Blue-emitting 0D Cs3Cu2I5 with High PLQY of ~90%, Society for Information Display (SID), SID international symposium digest of technical papers, pp. 1176-1178, May 2019.
• Yu-Shien Shiah, Joonho Bang, Katsumi Abe, Junghwan Kim, Hideo Hosono. NBTS-free Oxide TFTs with High Mobility of 40 cm2/Vs: A Possible Origin for NBTS Instability, Society for Information Display (SID), SID international symposium digest of technical papers, pp. 1349-1350, May 2019.
• Junghwan Kim, Yu-Shien Shiah, Joonho Bang, Katsumi Abe, Hideo Hosono. Stability Issues of High-mobility Oxide TFTs, International Thin-Film Transistor Conference (ITC) 2019, The Abstracts of the 15th ITC, p. 36, Feb. 2019.
• Junghwan kim, Hideo Hosono. Development of Ultra-Wide Bandgap Amorphous Oxide Semiconductors for Future Electronics, AiMES 2018, Meeting Abstracts. The Electrochemical Society, No. 36, pp. 1205-1205, Sept. 2018.
• Joonho Bang, Satoru Matsuishi, Junghwan Kim, Hideo Hosono. Hydrogen Anion and Subgap States in Amorphous In–Ga–Zn–O Thin Films, International Meeting on Information Display (IMID), IMID 2018 DIGEST, p. 84, Aug. 2018.
• Taehwan Jun, Kota Aoyama, Joonho Bang, Junghwan Kim, Hideo Hosono. Solution-Processable P-type Transparent Amorphous Semiconductor for Flexible Electronics, AM-FPD 2018, AM-FPD 2018, IEEE, pp. 1-2, July 2018.
• Junghwan Kim, Taehwan Jun, Hideo Hosono. New P‐type Amorphous Semiconductor with High Transparency and High Mobility of 9 cm2/Vs for Next‐Generation Displays, Society for Information Display (SID), SID international symposium digest of technical papers, Wiley, Vol. 49, pp. 236-238, May 2018.  公式リンク  
  
• Hideo Hosono, Nobuhiro Nakamura, Hongsheng Yang, Junghwan Kim. Novel Transparent Oxide Semiconductor, Zinc Silicates, for Electron Injection/Transport Layers in OLEDs, Proc. IDW'17, 685-686, Dec. 2017.
• Junghwan Kim, Toshio Kamiya, Hideo Hosono. Material Design and Development of New Amorphous Oxide Semiconductors for Future Electronics, ICMass/iLIM 2017, Sept. 2017.
• Junghwan Kim, Hideo Hosono, Toshio Kamiya. Development of Amorphous Gallium Oxide Semiconductor and its Application to future Electronic Devices, International Workshop on Ga2O3 and Related Materials (IWGO), Sept. 2017.
• Junghwan Kim, Nobuhiro Nakamura, Toshio Kamiya, Hideo Hosono. Material Design of Ultra-Wide Bandgap AOSs and their Applications in Photostable Electronic Devices, Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2017, 2017 24th International Workshop on. IEEE, pp. 299-301, Aug. 2017.
• Junghwan Kim, Toshio Kamiya, Hideo Hosono. Correlation between Electronic Structures and Instabilities in Amorphous Oxide Semiconductors: Strategies for High-Performance and Stable AOS-TFTs, International Meeting on Information Display (IMID), IMID 2017 DIGEST, p. 266, Aug. 2017.
• Koji Yamamoto, Junghwan Kim, Hideo Hosono. Influence of deposition rate of MoOx on Hole Injection Property for Inverted OLEDs, International Meeting on Information Display (IMID), IMID 2017 DIGEST, p. 432, Aug. 2017.
• Naoto Watanabe, Keisuke Ide, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Electronic structure of amorphous oxide semiconductor-based light emitting thin film, A-GaOx:Eu, The Tenth International Conference on the Science and Technology for Advanced Ceramics (STAC-10), Aug. 2017.
• 渡邉 脩人, 井手 啓介, 金 正煥, 平松 秀典, 片瀬 貴義, 細野 秀雄, 神谷 利夫. Room Temperature Fabricated Multi-Color Liight-Emitting Thin Films Based on Ultra-Wide Bandgap Amorphous Oxide Semiconductor, 10th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics, July 2017.
• Y. Futakado, N. Watanabe, K. Ide, J. Kim, T. Katase, H. Hiramats, H. Hosono, T. Kamiya. Exploration of New Oxide Light-Emitting Semiconductor Thin Films Using Transition Metals, 10th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics, July 2017.
• Nobuhiro Nakamura, Junghwan Kim, Koji Yamamoto, Satoru Watanabe, Naomichi Miyakawa, Toshio Kamiya, Hideo Hosono. OLED Lighting with High Out-Coupling Efficiency and Reliability, Society for Information Display (SID), SID Symposium Digest of Technical Papers, Wiley, Vol. 48, No. 1, pp. 2035-2038, May 2017.  公式リンク  
  
• Hongsheng Yang, Junghwan Kim, Hideo Hosono. Realization of Low-Voltage Drop across Charge Generation Layer using Bi-layer Oxide Semiconductors for Tandem OLEDs, Society for Information Display (SID), SID Symposium Digest of Technical Papers, Wiley, Vol. 48, No. 1, pp. 1971-1973, May 2017.  公式リンク  
  
• Hideo Hosono, Junghwan Kim, Toshio Kamiya, Nobuhiro Nakamura, Satoru Watanabe. Novel Inorganic Electron Injection and Transport Materials Enabling Large‐Sized Inverted OLEDs Driven by Oxide TFTs, Society for Information Display (SID), SID Symposium Digest of Technical Papers, Wiley, vol. 47, pp. 401-404, May 2016.  公式リンク  
  
• Junghwan Kim, Nobuhiro Nakamura, Toshio Kamiya, Hideo Hosono. NBIS-Stable Oxide Thin-Film Transistors Using Ultra-Wide Bandgap Amorphous Oxide Semiconductors, Society for Information Display, SID Symposium Digest of Technical Papers, vol. 47, pp. 951-953, May 2016.  公式リンク  
  
• Nobuhiro Nakamura, Toshinari Watanabe, Junghwan Kim, Satoru Watanabe, Eiji Matsuzaki, Yoshitake Toda, Naomichi Miyakawa, Satoru Fujitsu, Hideo Hosono. Deposition and Structuring Processes of a Newly Developed Transparent Amorphous Oxide Semiconductor for the Electron Transport and Injection Layers of AM-OLEDs, SID 2015, SID 2015 DIGEST, Vol. P-176L, pp. 1710-1713, June 2015.
• Junghwan Kim, Satoru Watanabe, Eiji Matsuzaki, Nobuhiro Nakamura, Naomichi Miyakawa, Yoshitake Toda, Toshio Kamiya, Hideo Hosono. Highly Efficient Inverted OLEDs Using a New Transparent Amorphous Oxide Semiconductor, SID 2015, SID 2015 DIGEST, Vol. P-177L, pp. 1714-1716, June 2015.

国内会議発表 (査読有り)

• 金 正煥. ハロゲン化物発光体を用いた低電圧高輝度無機ELの実現および今後の課題, 電子セラミック・プロセス研究会, Sept. 2019.
• 青山 皓太, 全 泰桓, 金 正煥, 細野 秀雄. 新規p型無機半導体の開発およびフレキシブル素子への 応用, 第66回応用物理学会春季学術講演会, Mar. 2019.
• 西間木祐紀, 井手啓介, 渡邊脩人, 金正煥, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. 希土類添加アモルファス酸化物半導体の電気物性とトランジスタ特性, 薄膜材料デバイス研究会 第15回研究集会, Nov. 2018.
• 井手啓介, 二角勇毅, 渡邉脩人, 金正煥, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. Cr添加アモルファス酸化ガリウム薄膜のフォトルミネッセンス特性, 薄膜材料デバイス研究会 第15回研究集会, Nov. 2018.
• 渡邊脩人, 井手啓介, 片瀬貴義, 笹瀬雅人, 戸田喜丈, 金正煥, 上田茂典, 堀場弘司, 組頭広志, 平松秀典, 細野秀雄, 神谷利夫. アモルファス酸化物半導体をホストとする蛍光体を用いた直流駆動型発光素子の室温形成, 薄膜材料デバイス研究会 第15回研究集会, Nov. 2018.
• 山本 晃司, 金 正煥, 細野 秀雄. 深い伝導帯準位を有する新規アモルファス酸化物半導体の開発とその有機発光素子への応用, 第６５回 応用物理学会 春季学術講演会, Mar. 2018.
• Taehwan Jun, Junghwan Kim, Hideo Hosono. Transparent Amorphous p-type Semiconductor with High Mobility (~9 cm2/Vs), Cu-Sn-I: Utilization of I 5p orbital as Pseudo Extended s-orbital, The 65th Spring Meeting, Mar. 2018.
• 二角勇毅, 渡邉脩人, 井手啓介, 金正煥, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. 遷移金属元素を発光中心としたアモルファス酸化物半導体蛍光体薄膜の探索, 第56回 セラミックス基礎科学討論会, Jan. 2018.
• Hideo Hosono, Eiji Matsuzaki, Yoshitake Toda, Junghwan Kim, Toshio Kamiya, Satoru Watanabe, Nobuhiro Nakamura, Naomichi Miyakawa. Transparent Amorphous Oxide Semiconductors for Efficient and Stable Electron Transport Layers in Organic LEDs and Lightings, Proc. the International Display Workshops (IDW2014), Vol. 21, pp. 649-650 (OLED2-4L), 2014.

国際会議発表 (査読なし・不明)

• Naoto Watanabe, Keisuke Ide, Takayoshi Katase, Junghwan Kim, Shigenori Ueda, Koji Horiba, Hiroshi Kumigashira, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Light emitting diodes on glass using amorphous oxide semiconductor thin-film phosphors, rare-earth doped a-Ga-O, Materials Research Meeting 2019, Dec. 2019.
• Keisuke Ide, Yuki Futakado, Naoto Watanabe, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Transition Metal-Doped Amorphous Oxide Semiconductor Thin-Film Phosphor, Chromium-Doped Amorphous Gallium Oxide, The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11), July 2019.
• Naoto Watanabe, Keisuke Ide, Takayoshi Katase, Junghwan Kim, Shigenori Ueda, Koji Horiba, Hiroshi Kumigashira, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Low-temperature fabrication of direct-current driven electroluminescent device using amorphous oxide semiconductor thin-film phosphor, The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11), July 2019.

国内会議発表 (査読なし・不明)

• 井手啓介, 金正煥, 片瀬貴義, 細野秀雄, 神谷利夫. アモルファス酸化物半導体を用いた新規デバイスの開拓, 薄膜材料デバイス研究会 第16回研究集会「新時代に向けた薄膜材料のデバイス技術」, Nov. 2019.
• 井手啓介, 渡邉脩人, 片瀬貴義, 笹瀬雅人, 金正煥, 上田茂典, 堀場弘司, 組頭広志, 平松秀典, 細野秀雄, 神谷利夫. 希土類添加アモルファス酸化物蛍光体薄膜の作製と発光素子への応用, 日本セラミックス協会 第39回電子材料研究討論会, Nov. 2019.
• 渡邉脩人, 井手啓介, 片瀬貴義, 笹瀬雅人, 戸田喜丈, 金正煥, 上田茂典, 堀場弘司, 組頭広志, 平松秀典, 細野秀雄, 神谷利夫. アモルファス酸化物半導体a-GaOxをホストとする蛍光体を用いた直流駆動型発光素子の低温作製, 第66回応用物理学会春季学術講演会, Mar. 2019.
• 西間木祐紀, 井手啓介, 渡邉脩人, 金正煥, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. アモルファス酸化物半導体薄膜トランジスタの希土類添加効果, 第57回セラミックス基礎科学討論会, Jan. 2019.

特許など

• 細野秀雄, 北野政明, 杉山博信, 横山壽治, 金正煥, 中村　伸宏　, 渡邉　暁　, 村上　貴章　. 水素化触媒. 特許. 公開. 国立大学法人東京工業大学, AGC株式会社. 2022/12/20. 特願2022-203117. 2023/08/08. 特開2023-109700. 2023.
• 細野秀雄, 金正煥, 吉田　尚史　, 大石　敦史　　, 服部　繁樹　　, 羽豆　耕治　　. 放射線検出素子、放射線検出デバイス及び放射線像撮像装置. 特許. 公開. 国立大学法人東京工業大学, 三菱ケミカル株式会社. 2022/08/01. 特願2022-122824. 2024/02/14. 特開2024-019991. 2024.
• 細野秀雄, 金正煥, 雲見日出也. 光電子素子、これを用いた平面ディスプレイ、及び光電子素子の製造方法. 特許. 登録. 国立大学法人東京工業大学. 2019/06/14. 特願2020-528761. 2021/09/24. 再表2020/008839. 特許第7181641号. 2022/11/22 2022.
• 細野秀雄, 金正煥, 方俊皓, 雲見日出也, 渡邉　暁, 大越　雄斗, 宮川　直通, 石橋　奈央, 増茂　邦雄, 中村　伸宏. 半導体化合物、半導体化合物の層を有する半導体素子、積層体、およびターゲット. 特許. 公開. 国立大学法人東京工業大学, AGC株式会社. 2018/10/30. 特願2019-557079. 2020/12/17. 再表2019/107046. 2020.
• 細野秀雄, 金正煥, 中村　伸宏, 渡邉　暁　, 宮川　直通　. 化合物半導体の量子ドットを含む膜. 特許. 登録. 国立大学法人東京工業大学, AGC株式会社. 2018/08/17. 特願2018-153628. 2019/03/14. 特開2019-041104. 特許第7073981号. 2022/05/16 2022.
• 細野秀雄, 金正煥, 宮川　直通　, 中村　伸宏　, 渡邉　暁　, 永井　直美, 苗　偉　. 有機ＥＬ素子. 特許. 公開. 国立大学法人東京工業大学, AGC株式会社, 株式会社カネカ. 2017/05/19. 特願2017-100081. 2018/12/06. 特開2018-195512. 2018.
• 細野秀雄, 神谷利夫, 雲見日出也, 金正煥, 中村　伸宏, 渡邉　暁, 宮川　直通. 酸化物半導体化合物の層、酸化物半導体化合物の層を備える半導体素子、および積層体. 特許. 登録. 国立大学法人東京工業大学, AGC株式会社. 2017/02/23. 特願2018-503092. 2019/01/10. 再表2017/150351. 特許第7130209号. 2022/08/26 2022.

学位論文

• Materials design and development of novel amorphous oxide semiconductors for light-emitting diodes,  Summary,  博士（工学）,  Tokyo Institute of Technology,  2016/03/26,   
• Materials design and development of novel amorphous oxide semiconductors for light-emitting diodes,  Exam Summary,  博士（工学）,  Tokyo Institute of Technology,  2016/03/26,   
• Materials design and development of novel amorphous oxide semiconductors for light-emitting diodes,  Outline,  博士（工学）,  Tokyo Institute of Technology,  2016/03/26,   
• Materials design and development of novel amorphous oxide semiconductors for light-emitting diodes,  Thesis,  博士（工学）,  Tokyo Institute of Technology,  2016/03/26, 

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