論文

• Gen Nakada, Yoshiharu Kihara, Akira Yasui, Kuniyuki KAKUSHIMA, Hiroshi Nohira. Estimation of the band alignment of metal/AlScN interfaces by hard X-ray photoelectron spectroscopy, Japanese Journal of Applied Physics, Volume 63, Number 5, 05SP14, May 2024.
• Tomoya Tsutsumi, Kazuki Goshima, Yoshiharu Kirihara, Tatsuki Okazaki, Akira Yasui, Mitani Yuichiro, Kuniyuki KAKUSHIMA, Hiroshi Nohira. Effects of plasma oxidation and plasma nitridation on chemical bonding state of AlScN evaluated by AR-HAXPES, Apr. 2024.
• "J. Chen", "T. Kawanago", "H. Wakabayashi", "K. Tsutsui", "H. Iwai", "D. Nohata", "H. Nohira", "K. Kakushima". La2O3 gate dielectrics for AlGaN/GaN HEMT, Microelectronics Reliability, Vol. 60, pp. 16-19, 2016.
• DARYOUSH ZADEH, Hiroshi Oomine, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, Hiroshi Nohira, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode, Solid-State Electronics, Vol. 82, pp. 29-33, Apr. 2013.
• マイマイティ マイマイティレャアティ, Miyuki Kouda, Kuniyuki KAKUSHIMA, Hiroshi Nohira, Ahmet Parhat, 片岡好則, 西山彰, KAZUO TSUTSUI, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Valance number transition and silicate formation of cerrium oxide on Si(100), Vacuum, Vol. 86, No. 10, pp. 1513-1516, Apr. 2012.
• 山下晃司, 沼尻 侑也, M. Watanabe, Kuniyuki KAKUSHIMA, HIROSHI IWAI, Hiroshi Nohira. Study of High-k/Ino.53Ga.0.47As interface by Hard X-ray Photoemission Spectroscopy, Japanese Journal of Applied Physics, Vol. 50, No. 10, pp. 10PD02-1-5, Oct. 2011.
• ダリューシュザデ, Takashi Kanda, 山下晃司, Kuniyuki KAKUSHIMA, Hiroshi Nohira, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on Ino.53Ga.0.47As Substrate with Different Surface Treatment Methods, Japanese Journal of Applied Physics, Vol. 50, No. 10, pp. 10PD03-1-4, Oct. 2011.
• Kuniyuki KAKUSHIMA, Koichi Okamoto, Tomotsune Koyanagi, Miyuki Kouda, Kiichi Tachi, Takamasa Kawanago, Jaeyeol Song, Ahmet Parhat, Hiroshi Nohira, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. SrO capping effect for La2O3/ Ce-Silicate gate dielectrics, Microelectronics Reliability 50, pp. 356-359, Mar. 2010.
• Kuniyuki KAKUSHIMA, Kiichi Tachi, Jaeyeol Song, Soshi Sato, Hiroshi Nohira, E. Ikenaga, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film, JOURNAL OF APPLIED PHYSICS, [ 145] K. Kakushima, K. Tachi K, J. Song, S. Sato, H. Nohira, E. Ikenaga, P. Ahmet, K.Tsutsui, N. Sugii, T.Hattori, H. Iwai, “Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film”, JOURNAL OF APPLIED PHYSICS, Vol.106, 2009, Vol. 106, 2009.
• KAZUO TSUTSUI, T Matsuda, M Watanabe, Cheng-Guo Jin, 佐々木雄一朗, Bunji Mizuno, E Ikenaga, Kuniyuki KAKUSHIMA, Ahmet Parhat, T Maruizumi, Hiroshi Nohira, takeo hattori, HIROSHI IWAI. Activated Boron and its Concentration Profiles in Heavily Doped Si Studied by Soft X-ray Photoelectron Spectroscopy and Hall Measurements, Journal of Applied Physics, Vol. 104, 093709, 2008.
• Ahmet Parhat, 中川健太郎, Kuniyuki KAKUSHIMA, Hiroshi Nohira, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack, Microelectronics Reliability, Vol. 48, pp. 1769–1771, 2008.
• Ahmet Parhat, Nakagawa Kentaro, Kuniyuki KAKUSHIMA, Hiroshi Nohira, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack, Microelectronics Reliability 48, Vol. 48, pp. 1769–1771, 2008.
• Hiroshi Nohira, T. Yoshida, H. Okamoto, S. Shinagawa, W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, NJ. Aun, Y. Kobayashi, Shun-ichiro OHMI, HIROSHI IWAI, E. Ikenaga, Y. Tanaka, K. Kobayashi, takeo hattori. Thermal stability of Gd2O3/Si(100) interfacial transition layer, JOURNAL DE PHYSIQUE IV, Vol. 132, pp. 273-277, 2006.

国際会議発表 (査読有り)

• Tomoyuki Suzuki, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Hiroshi Nohira, Kuniyuki Kakushima. Properties of SiC Schottky Junction with Laminated Molybdenum/Carbon Electrode, 47th IEEE Semiconductor Interface Specialists Conference (SISC2016), Dec. 2016.
• DARYOUSH ZADEH, Hiroshi Oomine, Yuya Suzuki, Kuniyuki KAKUSHIMA, Hiroshi Nohira, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode, 2013.
• Youhei Miyata, Jun Kanehara, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori1, Hiroshi Iwai. Analysis of Chemical Bonding States of Boron Doped in Si Fin Structures: Selective Observation on Top Surfaces and Sidewalls, 12th Int. Workshop on Junction Technology (IWJT2012), May 2012.
• Youhei Miyata, Jun Kanehara, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai. Soft X-ray Photoelectron Spectroscopy on Chemical Bonding States of Boron Doped in Si Fin Structures, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.
• Jun Kanehara, Youhei Miyata, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai. Chemical Bonding States of As in Si Shallow Junctions Detected by Soft X-ray Photoelectron Spectroscopy and their Profiles, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.
• KAZUO TSUTSUI, Masaoki Tanaka, Norifumi Hoshino, Hiroshi Nohira, Kuniyuki KAKUSHIMA, Ahmet Parhat, 佐々木雄一朗, Bunji Mizuno, T. Muro, T. Kinoshita, takeo hattori, HIROSHI IWAI. Soft X-ray Photoelectron Spectroscopy Study of Activation and Deactivation of Impurities in Shallow Junctions, ICSICT(International Conference on Solid-State and Integrated Circuit Technology)2010, Nov. 2010.
• KAZUO TSUTSUI, Norifumi Hoshino, Yasumasa Nakagawa, Masaoki Tanaka, Hiroshi Nohira, Kuniyuki KAKUSHIMA, Ahmet Parhat, 佐々木雄一朗, Bunji Mizuno, takeo hattori, HIROSHI IWAI. Depth Profiling of Chemical Bonding States of Impurity Atoms and Their Correlation with Electrical Activity in Si Shallow Junctions, IEEE IWJT 2010 Extended Abstracts 2010 International Workshop on Junction Technology, May 2010.
• Hiroshi Nohira, Yoichiro Kon, Koji Kitamura, Miyuki Kouda, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Annealing-temperature Dependence of Compositional Depth Profiles and Chemical Bonding States of CeOx / LaOx/Si and LaOx/CeOx /Si Structure, ECS 216th Meeting, vol. 25, No. 6, pp. 321-326, Oct. 2009.
• Tomoyuki Kurihara, Yohei Nagahama, Daisuke Kobayshi, Hiroki Niikura, Yoshishige Tsuchiya, Hiroshi Mizuta, Hiroshi Nohira, Ken Uchida, Shunri Oda. Engineering of Heterostructured Tunnel Barrier for Non-Volatile Memory Applications: Potential of Pr-based Heterostructured Barrier as a Tunneling Oxide, IEEE Silicon Nanoelectronics Workshop, June 2009.
• H. Nohira, Y. Takenaga, K. Kakushima, P. Ahmet, K. Tsutsui, H. Iwai. Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• K. Tsutsui, M. Watanabe, Y. Nakagawa, T. Matsuda, Y. Yoshida, E. Ikenaga, K. Kakushima, P. Ahmet, H. Nohira, T. Maruizumi, A. Ogura, T. Hattori, H. Iwai. New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-Ray Photoelectron Spectroscopy, the 38th European Solid-State Device Research Conference (ESSDERC2008), Sept. 2008.

国内会議発表 (査読有り)

• 野平博司, 今 陽一郎, 北村幸司, 幸田みゆき, 角嶋邦之, 岩井洋. CeO2/La2O3/Si(100)構造の熱安定性, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 703, Sept. 2008.
• 野平博司, 白石 貴義, 高橋 健介, 柏木 郁未, 大島 千鶴, 大見俊一郎, 岩井洋, 城森 慎司, 中嶋 薫, 鈴木 基史, 木村 健二, 服部 健雄. 極薄希土類酸化膜/Si(100)界面構造（極薄ゲート絶縁膜・シリコン界面の評価技術・解析技術）, 電子情報通信学会技術研究報告、SDM、シリコン材料・デバイス, 電子情報通信学会, Vol. 103, No. 149, pp. 25-29, June 2003.

国際会議発表 (査読なし・不明)

• Kouhei Akita, Jun Kanehara, Hiroshi Nohira, Y. Izumi, TAKAYUKI MURO, 木下豊彦, パールハットアヘメト, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, takeo hattori, HIROSHI IWAI. [517] Y. Miyata, K. Akita, J. Kanehara, H. Nohira, Y. Izumi, T. Muro, T. Kinoshita, P. Analysis of Boron Doped in Si Fin Structure by Soft X-ray Photoelectron Spectroscopy, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Jun Kanehara, Yusuke Takei, Youhei Miyata, Hiroshi Nohira, Y. Izumi, TAKAYUKI MURO, 木下豊彦, パールハットアヘメト, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, takeo hattori, HIROSHI IWAI. Depth Profiling of As with Various Chemical Bonding States Doped in Si Shallow Junction by Using Soft X-ray Photoelectron Spectroscopy, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, 中塚理, パールハットアヘメト, Hiroshi Nohira, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Properties of Ultrathin-Nickel-Silicide Schottky Diodes on Si(100), 15th International Conference on Thin Films, 2013.
• Youhei Miyata, Jun Kanehara, Hiroshi Nohira, Y. Izumi, T. Muro, 木下豊彦, パールハットアヘメト, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, takeo hattori, HIROSHI IWAI. Soft X-ray Photoelectron Spectroscopy Study of Boron Doped on Top Surfaces and Sidewalls of Si Fin Structures, 2012 12th International Workshop on Junction Technology(IWJT2012), 2012.
• Hiroshi Nohira, 小松新, 山下晃司, Kuniyuki KAKUSHIMA, HIROSHI IWAI, Y. Hioshi, K. Sawano, Y. Shiraki. XPS Study on Chemical Bonding States of high-k/high-μ Gate Stacks for Advanced CMOS, ECS 220th Meeting, ECS Transactions, Vol. 41, No. 7, pp. 137-146, 2011.
• Kuniyuki KAKUSHIMA, Tomotsune Koyanagi, 来山大祐, Miyuki Kouda, Jaeyeol Song, Takamasa Kawanago, M. Mamatrishat, Kiichi Tachi, M. K. Bera, Ahmet Parhat, Hiroshi Nohira, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, Keisaku Yamada, HIROSHI IWAI. Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability, 2010 Symposium on VLSI Technology, June 2010.

国内会議発表 (査読なし・不明)

• 宮田陽平, 金原潤, 難波覚, 三角元力, 筒井一生, 野平博司, 室隆桂之, 木下豊彦, 角嶋邦之, パールハットアヘメト, 服部健雄, 岩井洋. 軟X線光電子分光法を用いたFin構造中の不純物化学結合状態分析, 第72回応用物理学会学術講演会, 2011.
• 沢尻 侑也, 山下晃司, 小松 新, ダリューシュザデ, 角嶋邦之, 岩井洋, 野平博司. AR-XPSによる(NH４) ２S処理したIn0.53Ga0.47As表面の化学結合状態の評価, 第72回応用物理学会学術講演会, 2011.
• 金原潤, 宮田陽平, 秋田洸平, 筒井一生, 野平博司, 室隆桂之, 木下豊彦, パールハットアヘメト, 角嶋邦之, 服部健雄, 岩井洋. Si中に極浅ドープされたAsの軟X線光電子分光による化学結合状態の検出とその深さ方向分布, 第72回応用物理学会学術講演会, 2011.
• 田中正興, 金原潤, 宮田陽平, 角嶋邦之, パールハットアヘメト, 室隆桂之, 木下豊彦, 野平博司, 筒井一生, 室田 淳一, 服部健雄, 岩井洋. Siエピタキシャル層にドープされたボロンの軟X線光電子分光, 第７１回応用物理学会学術講演会, Sept. 2010.
• 角嶋邦之, 小柳友常, 来山大祐, 幸田みゆき, 宋在烈, 佐藤創志, 川那子高暢, M. マイマイティ, 舘喜一, M.K. Bera, パールハットアヘメト, 野平博司, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 山田啓作, 岩井洋. LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御, 応用物理学会分科会 シリコンテクノロジー, ，野平博司，筒井一生，西山彰，杉井信之，名取研二，服部健雄，山田啓作，岩井洋“LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御” 応用物理学会分科会 シリコンテクノロジー No.127 pp.4-8（2010年7月22日 ）, No. 127, pp. 4-8, July 2010.
• 田中正興, 星野憲文, 筒井一生, 野平博司, 室隆桂之, 加藤有香子, 木下豊彦, パールハットアヘメト, 角嶋邦之, 服部健雄, 岩井洋. 光電子分光により検出したSi中のAsおよびPの化学結合状態の評価, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-191, Mar. 2010.
• 山下晃司, 野平博司, 角嶋邦之, 岩井洋. HfO2/La2O３/In0.53Ga0.47As構造の熱安定性, 第７１回応用物理学会学術講演会, 2010.
• Miyuki Kouda, Naoto Umezawa, Kuniyuki KAKUSHIMA, Hiroshi Nohira, Ahmet Parhat, Kenji Shiraishi, 知京豊裕, Keisaku Yamada, HIROSHI IWAI. Charged defects reduction in gate insulator with multivalent materials, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• 野平博司, 今陽一郎, 北村幸司, 幸田みゆき, 角嶋邦之, 岩井 洋. CeO2 /La2O3/Si(100)構造の熱安定性(2), 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 853, Mar. 2009.
• 星野憲文, 中川恭成, 野平博司, 室 隆桂之, 加藤 有香子, 甲斐隆行, 金成国, パールハットアヘメト, 角嶋邦之, 水野文二, 木下 豊彦, 筒井一生, 服部健雄, 岩井洋. 光電子分光によるSi中Asの化学結合状態評価, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 883, Mar. 2009.
• 中川恭成, 野平博司, 酒井一憲, 横田 知之, 甲斐 隆行, 金成国, パールハットアヘメト, 角嶋邦之, 水野文二, 服部健雄, 筒井一生, 岩井洋. 光電子分光によるSi中Asの活性化状態の深さ方向分布評価, 秋季第69回応用物理学会学術講演会, 応用物理学会, 応用物理学会, No. 2, pp. 738, Sept. 2008.
• 北村 幸司, 舘喜一, 角嶋邦之, 野平 博司, 岩井洋. HfLaOx/SiO2/Siの組成分布に及ぼす熱処理の効果, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 848, Mar. 2008.

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