論文

• K. Fushinobu, T. Hatakeyama. Electro-thermal scaling analysis of Si MOSFETs with device length typically larger than 100 nm, Transactions of The Japan Institute of Electronics Packaging, Vol. 4, No. 1, pp. 31-35, Mar. 2012.
• Taisuke Miura, Tomoyuki Hatakeyama, KAZUYOSHI FUSHINOBU, Ken Okazaki. An investigation of effect of micro-structure on current collector for polymer electrolyte fuel cells, Thermal Science and Engineering, Heat Transfer Society of Japan, Vol. 17, No. 2, pp. 75-81, July 2009.
• S. Hasmady, T. Hatakeyama, M. P. Wacker, K. Fushinobu, KEN OKAZAKI. Treatment of Heterogeneous Electrocatalysis in Modeling Transport-Reaction Phenomena in PEFCs, Thermal Science and Engineering, Vol. 17, No. 4, pp. 147-156, 2009.
• Tomoyuki Hatakeyama, KEN OKAZAKI, KAZUYOSHI FUSHINOBU. Electro-Thermal Analysis of Submicron Si MOSFET with Zoned Mesh Based on Semiconductor Physics Theory, 2008.
• T. Hatakeyama, K. Fushinobu. Modeling of Heat Generation and Heat Flow in CMOS Device (Invited), Heat Transfer Engineering, Vol. 29, No. 2, pp. 120-133, 2008.
• Tomoyuki Hatakeyama, KAZUYOSHI FUSHINOBU. Modeling of Heat Generation and Heat Flow in CMOS Device (Invited), Heat Transfer Engineering, Vol. 29, No. 2, pp. 120-133, 2008.

国際会議発表 (査読有り)

• T. Hatakeyama, M. Ishizuka, S. Nakagawa, K. Fushinobu. Electro-Thermal Analysis and Monte Carlo Simulation for Thermal Design of Si Devices, ICEP2011, Proc. ICEP2011, Apr. 2011.
• K. Fushinobu, T. Hatakeyama. Electro-thermal scaling analysis of Si MOSFETs with device length typically larger than 100 nm, ICEP2011, Proc. ICEP2011, Apr. 2011.
• K. Fushinobu, T. Hatakeyama. Scaling consideration on local hotspot for Si MOSFETs - For device length scale typically larger than 100 nm, SEMI-THERM 27, Proc. SEMI-THERM 27, pp. 175-180, Mar. 2011.
• K. Fushinobu, Y. Yamamoto, T. Hatakeyama. Scaling consideration on local hotspot for Si MOSFETs - For device length scale typically larger than 100 nm, ITherm 2010, Proc. ITherm 2010, No. 008, June 2010.
• Yasufumi Yamamoto, T. Hatakeyama, K. Fushinobu, K. Okazaki. Heat generation characteristics in Si MOSFETs for the device-level thermal management - Effect of the device scaling and transport properties, 7th CHE Conference, Proc. 7th CHE Conference, CHE2009-23, Sept. 2009.
• T. Hatakeyama, K. Fushinobu, K. Okazaki, M. Ishizuka. Electro-Thermal Analysis and Monte Carlo Simulation for Thermal Issue in Si Devices, InterPACK 09, Proc. InterPACK 09, July 2009.
• T. Hatakeyama, K. Fushinobu, K. Okazaki. Impact of the Device Design on Electro-Thermal Properties of Si Devices, TFEC2008, No. F213, Oct. 2008.
• Yasufumi Yamamoto, Tomoyuki Hatakeyama, Kazuyoshi Fushinobu, Ken Okazaki. Electro-Thermal Analysis for Compact Heat Generation Model of Si MOSFET, The Seventh JSME-KSME Thermal and Fluids Engineering Conference (TFEC2008), CD-ROM, F134, Oct. 2008.
• T. Hatakeyama, K. Fushinobu, K. Okazaki. Temperature and Applied Voltage Dependence of the Device Interactions in Bulk Si CMOS, IFHT2008, No. 194, Sept. 2008.
• Tomoyuki Hatakeyama, Kazuyoshi Fushinobu, Ken Okazaki. ELECTRO-THERMAL ANALYSIS OF SUBMICRON Si MOSFET WITH ZONED MESH BASED ON SEMICONDUCTOR PHYSICS THEORY, The ASME-JSME 2007 Thermal Engineering and Summer Heat Transfer Conference, Proc. The ASME-JSME 2007 Thermal Engineering and Summer Heat Transfer Conference, pp. HT2007-32745, July 2007.
• Tomoyuki Hatakeyama, Kazuyoshi Fushinobu, Ken Okazaki. Device level thermal management of sub-100 nm semiconductor devices, rd International Nanotechnology Conference on Communication and Cooperation, Book of abstracts, 3rd International Nanotechnology Conference on Communication and Cooperation, pp. IN35, Apr. 2007.
• T. Hatakeyama, K. Fushinobu, K. Okazaki. Device Interactions of Submicron Si CMOS in Transient State, 17th ISTP, Proc. 17th ISTP, pp. 2-E-I-2, Sept. 2006.
• T. Hatakeyama, K. Fushinobu, K. Okazaki. Temperature and Time Dependence of Device Interactions in Submicron Si CMOS, 9th AIAA/ASME Joint Thermophysics and Heat Transfer Conference, Proc. 9th AIAA/ASME Joint Thermophysics and Heat Transfer Conference, pp. AIAA-2006-3611, June 2006.
• Tomoyuki Hatakeyama, K. Fushinobu, KEN OKAZAKI. Electro-thermal analysis of device interactions in Si CMOS structure, EMAP2005, Proc. EMAP2005, pp. 296-301, Dec. 2005.
• Tomoyuki Hatakeyama, K. Fushinobu, KEN OKAZAKI. Effect of the Device Structure in Electro-Thermal Analysis of Si CMOS, InterPACK'05, Proc. InterPACK'05, pp. IPACK2005-73151 (CD-ROM), July 2005.

国際会議発表 (査読なし・不明)

• Tomoyuki Hatakeyama, K. Fushinobu, KEN OKAZAKI. Electro-thermal analysis of interactions between Si MOSFETs in CMOS structures, Japan/US Joint Seminar on Nanoscale Transport Phenomena -Science and Engineering -, Abstracts of Japan/US Joint Seminar on Nanoscale Transport Phenomena -Science and Engineering -, pp. 55, July 2005.

国内会議発表 (査読なし・不明)

• 畠山友行, 伏信一慶, 石塚勝. Siナノトランジスタ熱管理のための熱・電気連成解析, 日本機械学会第22回計算力学講演会, 日本機械学会第22回計算力学講演会講演論文集, 1504, Oct. 2009.
• 畠山友行, 岡崎健, 伏信一慶, 石塚勝. 熱・電気連成解析における緩和時間が発熱に与える影響, 第46回日本伝熱シンポジウム, 第46回日本伝熱シンポジウム講演論文集, Vol. 3, pp. 329-630, June 2009.
• 山本泰史, 畠山友行, 伏信一慶, 岡崎健. Si MOSFETにおけるコンパクト発熱モデルのための熱・電気連成解析, 第４５回日本伝熱シンポジウム, 第４５回日本伝熱シンポジウム講演論文集, 社団法人日本伝熱学会, Vol. 2+3, pp. 683-684, May 2008.
• 畠山友行, 伏信一慶, 岡崎健. Si CMOS内デバイス間相互作用に関する実験, 第４５回日本伝熱シンポジウム, 第４５回日本伝熱シンポジウム講演論文集, 社団法人日本伝熱学会, Vol. 2+3, pp. 685-686, May 2008.
• T. Hatakeyama, K. Fushinobu, K. Okazaki. Modeling of Heat Generation and Heat Flow in CMOS Device, Tokyo Tech - ?? Workshop, July 2007.
• 畠山 友行, 伏信 一慶, 岡崎 健. サブミクロンSi MOSFETの熱・電気連成解析におけるチャンネル部での最適メッシュサイズ, 第44回日本伝熱シンポジウム, 第44回日本伝熱シンポジウム講演論文集, pp. 417-418, May 2007.
• 畠山 友行, 伏信 一慶, 岡崎 健. サブミクロンSi MOSFETの熱・電気連成解析におけるメッシュサイズのゾーニング手法, 熱工学コンファレンス2006, 熱工学コンファレンス2006講演論文集, pp. 263-264, Nov. 2006.
• 畠山友行, 伏信一慶, 岡崎健. サブミクロンSi CMOSにおけるデバイス間相互作用の熱・電気連成解析, 第43回日本伝熱シンポジウム, 第43回日本伝熱シンポジウム講演論文集, pp. 35-36, May 2006.

学位論文

• シリコンナノデバイス熱管理のための熱・電気連成現象解明,  本文,  博士（工学）,  東京工業大学,  2008/03/26,   

[ BibTeX 形式で保存 ]    [ 論文・著書をCSV形式で保存 ]    [ 特許をCSV形式で保存 ]