論文

• An Li, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Kuniyuki Kakushima. Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma, Japanese Journal of Applied Physics, Volume 63, Number 6, 066503, June 2024.  公式リンク  
  
• Yukimura Tokita, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA. Identification of compressive strain in thin ferroelectric Al1–xScxN films by Raman spectroscopy, Japanese Journal of Applied Physics, Volume 63, Number 4, 04SP31, Apr. 2024.  公式リンク  
  
• Si-Meng Chen, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Edward Yi Chang, Kuniyuki Kakushima. Reactive sputtering of ferroelectric AlScN films with H2 gas flow for endurance improvement, Japanese Journal of Applied Physics, Mar. 2024.  公式リンク  
  
• Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Edward Y. Chang, Kuniyuki Kakushima. Robust formation of ferroelectric HfO2 films by Y2O3 sub-monolayer lamination, Applied Physics Express, Dec. 2022.  公式リンク  
  
• Takamasa Kawanago, Ryosuke Kajikawa, Kazuto Mizutani, Sung-Lin Tsai, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact, IEEE Journal of the Electron Devices Society, IEEE, Vol. 11, p. 15-21, Nov. 2022.  公式リンク  
  
• Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Tien-Kan Chung, Edward Yi Chang, Kuniyuki Kakushima. Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films, Japanese Journal of Applied Physics, Aug. 2022.  公式リンク  
  
• Ryota Shibukawa, Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films, Japanese Journal of Applied Physics, Vol. 61, No. SH, pp. SH1003, July 2022.  公式リンク  
  
• Si-Meng Chen, Sung-Lin Tsai, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Edward Yi Chang, Kuniyuki Kakushima. GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation, Japanese Journal of Applied Physics, July 2022.  公式リンク  
  
• Atsuki Miyata, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima, Takuya Hoshii. Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure, Japanese Journal of Applied Physics, July 2022.  公式リンク  
  
• M. Nishizawa, T. Hoshii, H. Wakabayashi, K. Tsutsui, Yoshiaki Daigo, Ichiro Mizushima, T. Yoda, K. Kakushima. Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate, Japanese Journal of Applied Physics, Vol. 61, SH1011, June 2022.
• Si-Meng Chen, Sung Lin Tsai, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Edward Yi Chang, Kuniyuki KAKUSHIMA. GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation, Japanese Journal of Applied Physics, Volume 61, June 2022.
• Takamasa Kawanago, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Experimental demonstration of high-gain CMOS inverter operation at low V dd down to 0.5 V consisting of WSe2 n/p FETs, Japanese Journal of Applied Physics, Vol. 61, No. SC, pp. SC1004, May 2022.  公式リンク  
  
• Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Tien-Kan Chung, Edward Yi Chang, Kuniyuki Kakushima. Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films, Japanese Journal of Applied Physics (JJAP), Vol. 61, May 2022.
• Ryota Shibukawa, Sung Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA. Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films, Japanese Journal of Applied Physics, Volume 61, Apr. 2022.
• Atsuki Miyata, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA. Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure, Japanese Journal of Applied Physics, 61, SH, SH1005, Apr. 2022.
• Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Edward Y. Chang, Kuniyuki Kakushima. Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement, Japanese Journal of Applied Physics, Feb. 2022.  公式リンク  
  
• Takamasa KAWANAGO, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya HOSHII, Kuniyuki Kakushima, Kazuo TSUTSUI, Hitoshi WAKABAYASHI. Experimental demonstration of high-gain CMOS Inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs, Japanese Journal of Applied Physics (JJAP), Vol. 61, Feb. 2022.
• Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Edward Y. Chang, Kuniyuki Kakushima. Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement, Japanese Journal of Applied Physics (JJAP), Vol. 61, No. 2, Feb. 2022.
• Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Tien-Kan Chung, Edward Yi Chang, Kuniyuki Kakushima. On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films, Japanese Journal of Applied Physics (JJAP) （SSDM特集号）, Vol. 60, Page SBBA05, Apr. 2021.
• Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Tien-Kan Chung, Edward Y. Chang, Kuniyuki Kakushima. Publisher's Note: “Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering” [Appl. Phys. Lett. 118, 082902 (2021)], Applied Physics Letters, Mar. 2021.  公式リンク  
  
• Junji Kataoka, Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. A possible origin of the large leakage current in ferroelectric Al1-xScxN films, Japanese Journal of Applied Physics (JJAP) (Rapid Communication), Vol. 60, Page 30907, Feb. 2021.
• Jinhan Song, Atsuhiro Ohta, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer, Japanese Journal of Applied Physics (JJAP) (Rapid Communication), Vol. 60, Page 30901, Feb. 2021.
• S-L. Tsai, T. Hoshii, H. Wakabayashi, K. Tsutsui, T-K. Chung, E. Chang, K. Kakushima. Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering, Applied Physics Letters, Vol. 118, No. 8, Page 82902, Feb. 2021.
• Junji Kataoka, Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui. N-type conduction of sputter-deposited polycrystalline Al0.78Sc0.22N films by Si ion implantation, Applied Physics Express (APEX), No. 2, pp. 21002, Jan. 2021.
• Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Haruki Tanigawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Sulfurization even through Al2O3 Passivation Film Simultaneously Preventing Oxidation, Japanese Journal of Applied Physics (JJAP), Vol. 59, No. 10, Page 105501, Sept. 2020.
• Jinhan Song, Y. Lin, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima, Takuya Hoshii. Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection, Japanese Journal of Applied Physics, July 2020.  公式リンク  
  
• Haruki Tanigawa, Kentaro Matsuura, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Enhancement-mode accumulation capacitance–voltage characteristics in TiN/ALD-Al2O3/sputtered-MoS2 top-gated stacks, Japanese Journal of Applied Physics, Vol. 59, No. SM, pp. SMMC01, July 2020.  公式リンク  
  
• Kiyoshi Takeuchi, Munetoshi Fukui, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Shinichi Suzuki, Yohichiroh Numasawa, Naoyuki Shigyo, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Wataru Saito, Shin-ichi Nishizawa, Masanori Tsukuda, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto. Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs, IEEE Trans. On Semiconductor Manufactureing, Vol. 33, No. 2, pp. 159-165, May 2020.
• Jinan Song, Lyu Wei Lin, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. Atomic Layer Deposition of Y2O3 Thin Films with a High Growth per Cycle by Ar Multiple Boost Injection, Japanese Journal of Applied Physics (JJAP), Vol. 59, Apr. 2020.
• Haruki Tanigawa, Kentaro Matsuura, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Enhancement-Mode Accumulation Capacitance-Voltage Characteristics in TiN/ALD-Al2O3/Sputtered-MoS2 Top-Gated Stacks, Japanese Journal of Applied Physics (JJAP), Vol. 59, Apr. 2020.
• Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Kuniyuki Kakushima, Takuya Hoshii, Kazuo Tsutsui, Hiroshi Iwai, Shin-ichi Nishizawa, Ichiro Omura, Toshiro Hiramoto. Impact of structural parameter scaling on on-state voltage in 1200 V scaled IGBTs, Japanese Journal of Applied Physics, Apr. 2020.  公式リンク  
  
• Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Kuniyuki Kakushima, Takuya Hoshii, Kazuo Tsutsui, Hiroshi Iwai, Shin-ichi Nishizawa, Ichiro Omura, Toshiro Hiramoto. Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs, Japanese Journal of Applied Physics, Vol. 59, No. SG, Mar. 2020.
• Joel Molina-Reyes, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films, Jpn. J. Appl. Phys., Vol. 59, pp. SGGB06-1-6, Feb. 2020.
• Joel Molina-Reyes, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films, Japanese Journal of Applied Physics, Vol. 59, No. SG, Feb. 2020.
• Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film using UHV RF Magnetron Sputtering and Sulfurization, Journal of the Electron Devices Society (J-EDS), IEEE, Vol. 7, No. 1, pp. 1258-1263, Dec. 2019.
• Takuya Hoshii, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, KAZUO TSUTSUI. Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates, Japanese Journal of Applied Physics, Vol. 58, No. 6, pp. 061006, June 2019.  公式リンク  
  
• Kalainathan, S., Ahsan, N., Hoshii, T., Okada, Y., Logu, T., Sethuraman, K., Takuya Hoshii. Tailoring sub-bandgap of CuGaS<inf>2</inf> thin film via chromium doping by facile chemical spray pyrolysis technique, Journal of Materials Science: Materials in Electronics, Vol. 29, No. 22, pp. 19359-19367, 2018.  公式リンク  
  
• Kazuo Tsutsui, Tomohiro Matsushita, Kotaro Natori, Takayuki Muro, Yoshitada Morikawa, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita. Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography, Nano Letters, Vol. 17, pp. 7533-7538, Nov. 2017.
• Tsutsui, K., Matsushita, T., Natori, K., Muro, T., Morikawa, Y., Hoshii, T., Kakushima, K., Wakabayashi, H., Hayashi, K., Matsui, F., Kinoshita, T., Takuya Hoshii. Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography, Nano Letters, Vol. 17, No. 12, pp. 7533-7538, 2017.  公式リンク  
  
• Hoshii Takuya, Naitoh Shunya, Okada Yoshitaka. Photoassisted impedance spectroscopy for quantum dot solar cells, Jpn. J. Appl. Phys., Institute of Physics, Vol. 55, No. 4, Feb. 2016.
• Hoshii, T., Naitoh, S., Okada, Y., Takuya Hoshii. Photoassisted impedance spectroscopy for quantum dot solar cells, Japanese Journal of Applied Physics, Vol. 55, No. 4, 2016.  公式リンク  
  
• Tamayo, R.E.E., Hoshii, T., Tamaki, R., Watanabe, K., Sugiyama, M., Okada, Y., Miyano, K., Takuya Hoshii. Maskless fabrication of broadband antireflection nanostructures on glass surfaces, Journal of Optics (United Kingdom), Vol. 18, No. 6, 2016.  公式リンク  
  
• Efrain Eduardo Tamayo Ruiz, Kentaroh Watanabe, Ryo Tamaki, Takuya Hoshii, Masakazu Sugiyama, Yoshitaka Okada, Kenjiro Miyano, Aleksandra Cvetkovic, Rubﾃｩn Mohedano, Maikel Hernandez. Plasma etching antireflection nanostructures on optical elements in concentrator photovoltaic systems, Journal of Photonics for Energy, Vol. 5, No. 1, pp. 057006, Dec. 2014.  公式リンク  
  
• Noriyuki Taoka, Masafumi Yokoyama, Sang Hyeon Kim, Rena Suzuki, Sunghoon Lee, Ryo Iida, Takuya Hoshii, Wipakorn Jevasuwan, Tatsuro Maeda, Tetsuji Yasuda, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi. Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in InGaAs Metal–Oxide–Semiconductor Field Effect Transistors, IEEE Transactions on Device and Materials Reliability, Vol. 13, No. 4, pp. 456-462, Dec. 2013.  公式リンク  
  
• Yosuke Tamura, Toshiyuki Kaizu, Takayuki Kiba, Makoto Igarashi, Rikako Tsukamoto, Akio Higo, Weiguo Hu, Cedric Thomas, Mohd Erman Fauzi, Takuya Hoshii, Ichiro Yamashita, Yoshitaka Okada, Akihiro Murayama, Seiji Samukawa. Quantum size effects in GaAs nanodisks fabricated using a combination of the bio-template technique and neutral beam etching, Nanotechnology, Vol. 24, No. 28, pp. 285301, July 2013.  公式リンク  
  
• Noriyuki Taoka, Masafumi Yokoyama, Sang Hyeon Kim, Rena Suzuki, Sunghoon Lee, Ryo Iida, Takuya Hoshii, Wipakorn Jevasuwan, Tatsuro Maeda, Tetsuji Yasuda, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi. Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors, Applied Physics Letters, Vol. 103, No. 14, pp. 143509, 2013.  公式リンク  
  
• Rena Suzuki, Noriyuki Taoka, Masafumi Yokoyama, Sang-Hyeon Kim, Takuya Hoshii, Tatsuro Maeda, Tetsuji Yasuda, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi. Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties, Journal of Applied Physics, Vol. 112, No. 8, pp. 084103, Oct. 2012.  公式リンク  
  
• Takuya Hoshii, Sunghoon Lee, Rena Suzuki, Noriyuki Taoka, Masafumi Yokoyama, Hishashi Yamada, Masahiko Hata, Tetsuji Yasuda, Mitsuru Takenaka, Shinichi Takagi. Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation, Journal of Applied Physics, Vol. 112, No. 7, pp. 073702, Oct. 2012.  公式リンク  
  
• Wipakorn Jevasuwan, Yuji Urabe, Tatsuro Maeda, Noriyuki Miyata, Tetsuji Yasuda, Akihiro Ohtake, Hisashi Yamada, Masahiko Hata, Sunghoon Lee, Takuya Hoshii, Mitsuru Takenaka, Shinichi Takagi. Controlling Anion Composition at Metal-Insulator-Semiconductor Interfaces on III-V Channels by Plasma Processing, Japanese Journal of Applied Physics, Vol. 51, No. 6 PART 1, pp. 065701, May 2012.  公式リンク  
  
• R. Suzuki, N. Taoka, M. Yokoyama, S. Lee, S. H. Kim, T. Hoshii, T. Yasuda, W. Jevasuwan, T. Maeda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, S. Takagi. 1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density, Applied Physics Letters, Vol. 100, No. 13, pp. 132906, 2012.  公式リンク  公式リンク  
  
• Noriyuki Taoka, Masafumi Yokoyama, Sang Hyeon Kim, Rena Suzuki, Takuya Hoshii, Ryo Iida, Sunghoon Lee, Yuji Urabe, Noriyuki Miyata, Tetsuji Yasuda, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi. AC response analysis of C-V curves and quantitative analysis of conductance curves in Al2O3/InP interfaces, Microelectronic Engineering, Elsevier B.V., Vol. 88, No. 7, pp. 1087-1090, July 2011.  公式リンク  公式リンク  
  
• Shinichi Takagi, Rui Zhang, Takuya Hoshii, Noriyuki Taoka, Mitsuru Takenaka, S Kar, S VanElshocht, K Kita, M Houssa, D Misra. MOS Interface Control Technologies for III-V/Ge Channel MOSFETs, ECS transactions, Vol. 41, No. 3, pp. 3-20, 2011.  公式リンク  公式リンク  
  
• Yoshiyuki Kondo, Momoko Deura, Yuki Terada, Takuya Hoshii, Mitsuru Takenaka, Shinichi Takagi, Yoshiaki Nakano, Masakazu Sugiyama. Initial growth of InAs on P-terminated Si(111) surfaces to promote uniform lateral growth of InGaAs micro-discs on patterned Si, Journal of Crystal Growth, Vol. 312, No. 8, pp. 1348-1352, Apr. 2010.  公式リンク  
  
• T. Haimoto, T. Hoshii, S. Nakagawa, M. Takenaka, S. Takagi. Fabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces, Applied Physics Letters, Vol. 96, No. 1, pp. 012107, 2010.  公式リンク  
  
• T. Hoshii, M. Yokoyama, H. Yamada, M. Hata, T. Yasuda, M. Takenaka, S. Takagi. Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO[sub 2], Applied Physics Letters, Vol. 97, No. 13, pp. 132102, 2010.  公式リンク  
  
• Momoko Deura, Takuya Hoshii, Takahisa Yamamoto, Yuichi Ikuhara, Mitsuru Takenaka, Shinichi Takagi, Yoshiaki Nakano, Masakazu Sugiyama. Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy, Applied Physics Express, Vol. 2, No. 1, pp. 011101, Jan. 2009.  公式リンク  
  
• Momoko Deura, Takuya Hoshii, Mitsuru Takenaka, Shinichi Takagi, Yoshiaki Nakano, Masakazu Sugiyama. Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on Si, Journal of Crystal Growth, Vol. 310, No. 23, pp. 4768-4771, Nov. 2008.  公式リンク  
  
• Takuya Hoshii, Momoko Deura, Masakazu Sugiyama, Ryosho Nakane, Satoshi Sugahara, Mitsuru Takenaka, Yoshiaki Nakano, Shinichi Takagi. Epitaxial lateral overgrowth of InGaAs on SiO 2 from (111) Si micro channel areas, physica status solidi (c), Vol. 5, No. 9, pp. 2733-2735, July 2008.  公式リンク  
  
• Takuya Hoshii, Satoshi Sugahara, Shin-ichi Takagi. Effect of Tensile Strain on Gate Current of Strained-Si n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors, Japanese Journal of Applied Physics, Vol. 46, No. 4B, pp. 2122-2126, Apr. 2007.  公式リンク  
  

国際会議発表 (査読有り)

• Ryosuke Kajikawa, Takamasa Kawanago, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-Aligned WOx S/D Contacts to Gate Stacks with TiOx Nucleation Layer by Multiple-Deposition Method in WSe2 pFETs, International Conference on Solid State Devices and Materials, Sept. 2023.
• Shonosuke Kimura, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui. Performance Improvements of P-channel GaN HFETs by Atomic Layer Etching using Nitrogen Plasma, the International Workshop on Nitride Semiconductors 2022, Oct. 2022.
• Mitsuki Nishizawa, T. Hoshii, H. Wakabayashi, K. Tsutsui, I. Mizushima, T. Yoda, K. Kakushima. Introduction of surface field-plate for accurate minority carrier lifetime estimation of 4H-SiC epitaxial layer, International Workshop on Dielectric Thin Films for Futre Electron Devices -Science and Technology-, Nov. 2021.
• Si-Meng Chen, Sung-Lin Tsai, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation, International Workshop on Dieectfic Thin Films for Futre Electron Devices -Science and Technology-, Nov. 2021.
• Sho Sasaki, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. Observation of ferroelectricity in atomic layer deposited AlN film, International Workshop on Dierectric Thin Films for Futre Electron Devices -Science and Technology-, Nov. 2021.
• R. Shibukawa, S. -L. Tsai, T. Hoshii, H. Wakbayashi, K. Tsutsui, K. Kakushima. Thermal stability of ferroelectric AlScN films, International Workshop on Dierectric Thin Films for Futre Electron Devices -Science and Technology-, Nov. 2021.
• Kazuto Mizutani, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima. Recovery of ferroelectric property after endurance test by positive reset voltage application for CeOx-capped ferroelectric HfO2 films, International Workshop on Dielectric Thin Films for Futre Electron Devices -Science and Technology-, Nov. 2021.
• Takamasa Kawanago, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd Down to 0.5 V Consisting of WSe2 n/p FETs, International Conference on Solid State Devices and Materials, Sept. 2021.
• Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai. Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices, IEEE 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021), Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021), pp. 217-219, Apr. 2021.
• Takuya Saraya, Kazuo Ito, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Katsumi Satoh, Tomoko Matsudai, Kuniyuki Kakushima, Takuya Hoshii, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Wataru Saito, Shin-ichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto. 3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology, International Electron Devices Meeting (IEDM) 2020, Dec. 2020.
• S. Tsai, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima. Highly Oriented Growth of AlxSc1-xN Ferroelectric Film on W Bottom Electrodes, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.
• Sunglin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. Thickness Scaling on Ferroelectric Al0.8Sc0.2N Films, International Conference of Solid State Devices and Materials (SSDM) 2020, Sept. 2020.
• Jinhan Song, A. Ohta, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima. Electrical Characteristics of Atomic Layer Deposited Y-silicate Devices, Int. Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (IWDTF2019), Nov. 2019.
• T. Kinoshita, T. Matsushita, T. Muro, T. Ohkochi, H. Osawa, K. Hayashi, F. Matsui, K.Tsutsui, K. Natori, Y. Morikawa, T. Hoshii, K. Kakushima, H. Wakabayashi, A. Takeda, K. Terashima, W. Hosoda, T. Fukura, Y. Yano, H. Fujiwara, M. Sunagawa, H. Kato, T. Oguchi, T. Wakita, Y. Muraoka, T. Yokoya. Status of Photoelectron Holography at SPring-8: Experimental Setup for Time- and Space-Resolved Technique and Application to Individual Atomic Imaging of Multiple Dopant Sites, T. Kinoshita, T. Matsushita, T. Muro, T. Ohkochi, H. Osawa, K. Hayashi, F. Matsui, K.Tsutsui, K. Natori, Y. Morikawa, T. Hoshii, K. Kakushima, H. Wakabayashi, A. Takeda, K. Terashima, W. Hosoda, T. Fukura, Y. Yano, H. Fujiwara, M. Sunagawa, H. Kato, T. Oguchi, T. Wakita, Y. Muraoka and T. Yokoya, Nov. 2019.
• H. Tanigawa, K. Matsuura, I. Muneta, T. Hoshii, K. Kakushima, K. Tsutsui, H. Wakabayashi. Positive Threshold Voltage in Accumulation Capacitance of TiN-Top-Gate/High-k/Sputtered-MoS2 Stacks, Int. Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (IWDTF2019), Nov. 2019.
• Y. W. Lin, J. Song, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima. Pulse deposition of Y2O3 films by Y(iPrCp)3 assisted by Ar boost technology, Int. Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (IWDTF2019), Nov. 2019.
• Takuya Hoshii, Hiromasa Okita, Taihei Matsuhashi, Indraneel Sanyal, Yu-Chih Chen, Ying-Hao Ju, Akira Nakajima, Kuniyuki Kakushima, Hitoshi Wakabayashi, Jen-Inn Chyi, Kazuo Tsutsui. Evaluation of Interfacial Charges at GaN/AlGaN Interfaces Grown by MOVPE, The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), Nov. 2019.
• Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita. 3D Atomic Imaging of As Doped in Si by Spectro-Photoelectron Holography, 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8), Nov. 2019.
• T. Hiramoto, T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, H. Wakabayashi, K. Tsutsui, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohash. Switching of 3300V Scaled IGBT by 5V Gate Drive, ASICON (International Conference on ASIC), Oct. 2019.
• Joel Molina-Reyes, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. Endurance Improvement in Ferroelectric Y-doped HfO2 Thin Films on NiSi2 with Low-Thermal Budget Processing, Solid State Devices and Materials (SSDM2019), Sept. 2019.
• T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, S. Nshizawa, I. Omura, T. Hiramoto. Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs, Int. Conf. on Solide State Devices and Materials (SSDM2019), Sept. 2019.
• Takuya Hoshii, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui. Quantitative evaluation of interfacial charges at GaN/AlGaN interfaces, 13tu Int. Conf. on Nitride Semiconductor (ICNS), July 2019.
• M. Fukui, T. Saraya, K. Itou, T. Takakura, S. Suzuki, K. Takeuchi, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, S. Nishizawa, I. Omura, T. Hiramoto. Turn-Off Loss Improvement by IGBT Scaling, Int. Conf. on Solide State Devices and Materials (SSDM2019), May 2019.
• Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shin-Ichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramo. 3300V Scaled IGBTs Driven by 5V Gate Voltag, 31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019), May 2019.
• Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Toshihiro Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai. Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs, 31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019), May 2019.
• Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. High Hall-Effect Mobility of Atomic-Layered Polycrystalline-ZrS2 Film using Sputtering and Sulfur Annealing, 3rd Electron Devices Technology and Manufactureing Conference (EDTM2019), Mar. 2019.
• Takeya Inoue, Takuya Hoshii, Takuo Kikuchi, Hidehiko Yabuhara, Kazuyuki Ito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, Junichi Tonotani, Kazuo Tsutsui. Fundamental study on reducing on-resistance by introducing strain into silicon vertical power devices, 3rd Electron Devices Technology and Manufactureing Conference (EDTM2019), Mar. 2019.
• T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, K. Tsutsui, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto. Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss, International Electron Devices Meeting (IEDM2018), Dec. 2018.
• K. Sasaki, J. Song, T. Hoshii, H. Wakabayashi, K. Tsutsui, I. Mizushima, T. Yoda, K. Kakushima. Minority Carrier Lifetime Measurement for SiC Epitaxial Layer, The 5th Meeting on Advanced Power Semiconductors, Nov. 2018.
• Toyohiko Kinoshita, Tomohiro Matsushita, Takayuki Muro, Takuo Ohkochi, Hitoshi Osawa, Kouichi Hayashi, Fumihiko Matsui, Kazuo Tsutsui, Kotaro Natori, Yoshitada Morikawa, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Aya Taked, Kensei Terashim, Wataru Hosoda, Tetsuji Fukura, Yuukou Yano, Hirohkazu Fujiwara, Masanori Sunagawa, Hiromitsu Kato, Tamio Oguchi, Takanori Wakita, Yuuji Muraoka, Takayoshi Yokoya. Status of photoelectron holography at SPring-8:Experimental setup for time- and space-resolved technique and application to individual atomic imaging of multiple dopant sites, 14th Int. Conf. on Electron Spectroscopy and Structure (ICEESS-14), Oct. 2018.
• M. Hamada, K. Matsuura, T. Sakamoto, H. Tanigawa, T. Ohashi, I. Muneta, T. Hoshii, K. Kakushima, K. Tsutsui, H. Wakabayashi. Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film, 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct. 2018.
• Kazuya Hisatsune, Yoshihisa Takaku, Kohei Sasa, Takuya Hoshii, Iriya Muneta, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. Charge and Discharge Characteristics of On-chip CeOx Electric Double Layer Decoupling Capacitors, Int. Conf. on Sold State Devices and Materials (SSDM2018), Sept. 2018.
• Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Masahiro Watanabe, Naoyuki Shigyo, Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Sinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai. Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately, 44th European Solid-State Circuits Conference (ESSDERC2018), Sept. 2018.
• K. Kakushima, T. Hoshii, M. Watanabe, N. Shigyo, K. Furukawa, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Y. Numasawa, A. Ogura, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai. New methodology for evaluating minority carrier lifetime for process assessment, Symp. On VLSI Technology (VLSI2018), June 2018.
• Suguru Tatsunokuchi, I. Muneta, T. Hoshii, H. Wakabayashi, K. Tsutsui, HIROSHI IWAI, K. Kakushima. Photovoltaic Properties of Lateral Ultra-Thin Si p-i-n structure, China Semiconductor Technology International Conference (CSTIC2018), Mar. 2018.
• Yamashita, D., Watanabe, K., Fujino, M., Hoshii, T., Okada, Y., Nakano, Y., Suga, T., Sugiyama, M., Takuya Hoshii. Admittance spectroscopy analysis on the interfacial defect levels in the surface-activated bonding of GaAs, 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, pp. 1-3, 2018.  公式リンク  
  
• Tsutsui, K., Matsushita, T., Muro, T., Morikawa, Y., Natori, K., Hoshii, T., Kakushima, K., Wakabayashi, H., Hayashi, K., Matsui, F., Kinoshita, T., Takuya Hoshii. Analyses of 3D atomic arrangements of impurity atoms doped in silicon by spectro-photoelectron holography technique, 2018 18th International Workshop on Junction Technology, IWJT 2018, Vol. 2018-January, pp. 1-6, 2018.  公式リンク  
  
• Kaneko, T., Muneta, I., Hoshii, T., Wakabayashi, H., Tsutsui, K., Iwai, H., Kakushima, K., Takuya Hoshii. Characterization of β-Ga<inf>2</inf>O<inf>3</inf> Schottky barrier diodes, 2018 18th International Workshop on Junction Technology, IWJT 2018, Vol. 2018-January, pp. 1-3, 2018.  公式リンク  
  
• Su, C.Y., Hoshii, T., Muneta, I., Wakabayashi, H., Tsutsui, K., Iwai, H., Kakushima, K., Takuya Hoshii. Interface state density of atomic layer deposited AI2O3 on J3-Gai03, ECS Transactions, Vol. 85, No. 7, pp. 27-30, 2018.  公式リンク  
  
• Tatsunokuchi, S., Muneta, I., Hoshii, T., Wakabayashi, H., Tsutsui, K., Iwai, H., Kakushima, K., Takuya Hoshii. Photovoltaic properties of lateral ultra-thin Si p-i-n structure, China Semiconductor Technology International Conference 2018, CSTIC 2018, pp. 1-3, 2018.  公式リンク  
  
• Su, C.Y., Hoshii, T., Muneta, I., Wakabayashi, H., Tsutsui, K., Iwai, H., Kakushima, K., Takuya Hoshii. Interface state density of atomic layer deposited AI2O3 on J3-Gai03, ECS Transactions, Vol. 85, No. 7, pp. 27-30, 2018.  公式リンク  
  
• Kotaro Natori, Tatsuhiro Ogawa, Takuya Hoshii, Tomohiro Matsushia, Takayuki Muro, Toyohiko Kinoshita, Yoshitada Morikawa, Kuniyuki Kakushima, Fumihiko Matsui, Kouichi Hayashi, Hitoshi Wakabayashi, Kazuo Tsutsui. Atomic scale analyses of As doped in Si by soft X-ray photoelectron spectroscopy and spectro-photoelectron holography, 11th Int. Symp. on Atomic Level Characterization (ALC'17), Dec. 2017.
• Suguru Tatsunokuchi, Iriya Muneta, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima. Photovoltaic Properties of Lateral Si Nano Wall Solar Cells, 2017 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Tecnology (IWDTF 2017), Nov. 2017.
• Takuya Hoshii, Rumi Takayama, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui. Back-gate effect on p-channel GaN MOSFETs on Polarization-Junction Substrate, International Conference on Solid-State Devices and Materials (SSDM2017), Sept. 2017.
• K. Kakushima, Yuta Ikeuchi, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, T. Kikuchi, S. Ishikawa. Low Temperature Ohmic Contact for p-type GaN using Mg Electrodes, Int. Workshop on Junction Technology (IWJT2017), June 2017.
• K. Kakushima, T. Suzuki, T. Hoshii, I. Muneta, H. Wakabayashi, HIROSHI IWAI, Y. Aoki,H. Nohira Aoki, KAZUO TSUTSUI. Formation of Mo2C Electrodes using Stacked Sputtering Process for Thermally Stable SiC Schottky Barrier Diodes, Int. Workshop on Junction Technology (IWJT2017), June 2017.
• Kakushima, K., Ikeuchi, Y., Hoshii, T., Iriya Muneta, Wakabayashi, H., Tsutsui, K., Iwai, H., Kikuchi, T., Ishikawa, S., Takuya Hoshii. Low temperature ohmic contact for p-type GaN using Mg electrodes, 17th International Workshop on Junction Technology, IWJT 2017, pp. 85-86, 2017.  公式リンク  
  
• Kakushima, K., Suzuki, T., Hoshii, T., Iriya Muneta, Wakabayashi, H., Tsutsui, K., Iwai, H., Nohira, H., Takuya Hoshii. Formation of Mo<inf>2</inf>C electrodes using stacked sputtering process for thermally stable SiC Schottky barrier diodes, 17th International Workshop on Junction Technology, IWJT 2017, pp. 81-82, 2017.  公式リンク  
  
• Kakushima, K., Hoshii, T., Tsutsui, K., Nakajima, A., Nishizawa, S., Wakabayashi, H., Muneta, I., Sato, K., Matsudai, T., Saito, W., Saraya, T., Itou, K., Fukui, M., Suzuki, S., Kobayashi, M., Takakura, T., Hiramoto, T., Ogura, A., Numasawa, Y., Omura, I., Ohashi, H., Iwai, H., Takuya Hoshii. Experimental verification of a 3D scaling principle for low V<inf>ce(sat)</inf>IGBT, Technical Digest - International Electron Devices Meeting, IEDM, pp. 10.6.1-10.6.4, 2017.  公式リンク  
  
• K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai. Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT, 62th International Electron Devices Meeting (IEDM2016), p. 268, Dec. 2016.
• Y. Ikeuchi, T. Hoshii, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima, S.Ishikawa. Characteristics of Fe/pGaN Contact upon Annealing Process, 47th IEEE Semiconductor Interface Specialists Conference (SISC2016), Dec. 2016.
• Yamashita, D., Watanabe, K., Fujino, M., Hoshii, T., Okada, Y., Nakano, Y., Suga, T., Sugiyama, M., Takuya Hoshii. Admittance spectroscopy analysis on the interfacial defect levels in the surface-activated bonding of GaAs, Conference Record of the IEEE Photovoltaic Specialists Conference, Vol. 2016-November, pp. 2317-2319, 2016.  公式リンク  
  
• Tamayo, R.E.E., Watanabe, K., Sugiyama, M., Hoshii, T., Shoji, Y., Okada, Y., Miyano, K., Takuya Hoshii. Fabrication of broadband antireflection structures on glass substrates by Reactive Ion Etching for application on homogenizers in CPV systems, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 489-492, 2013.  公式リンク  
  
• Taoka, N., Yokoyama, M., Kim, S.H., Suzuki, R., Iida, R., Lee, S., Hoshii, T., Jevasuwan, W., Maeda, T., Yasuda, T., Ichikawa, O., Fukuhara, N., Hata, M., Takenaka, M., Takagi, S., Takuya Hoshii. Impact of Fermi level pinning inside conduction band on electron mobility of In <inf>x</inf>Ga <inf>1-x</inf>As MOSFETs and mobility enhancement by pinning modulation, Technical Digest - International Electron Devices Meeting, IEDM, 2011.  公式リンク  
  
• Yasuda, T., Miyata, N., Urabe, Y., Ishii, H., Itatani, T., Takagi, H., Yamada, H., Fukuhara, N., Hata, M., Ohtake, A., Yokoyama, M., Hoshii, T., Haimoto, T., Deura, M., Sugiyama, M., Takenaka, M., Takagi, S., Takuya Hoshii. Relationships between interface structures and electrical properties in the high-κ/III-V system, Materials Research Society Symposium Proceedings, Vol. 1194, pp. 53-64, 2010.  公式リンク  
  
• Yasuda, T., Miyata, N., Urabe, Y., Ishii, H., Itatani, T., Takagi, H., Yamada, H., Fukuhara, N., Hata, M., Ohtake, A., Yokoyama, M., Hoshii, T., Haimoto, T., Deura, M., Sugiyama, M., Takenaka, M., Takagi, S., Takuya Hoshii. Relationships between interface structures and electrical properties in the high-κ/III-V system, Materials Research Society Symposium Proceedings, Vol. 1194, pp. 53-64, 2010.  公式リンク  
  
• Deura, M., Kondo, Y., Hoshii, T., Takenaka, M., Takagi, S., Nakano, Y., Sugiyama, M., Takuya Hoshii. In Situ monitoring of the initial nucleation for the formation of uniform InGaAs micro-discs on Si, ECS Transactions, Vol. 25, No. 8 PART 1, pp. 521-524, 2009.  公式リンク  
  
• Takenaka, M., Takeda, K., Hoshii, T., Tanemura, T., Sugiyama, M., Nakano, Y., Takagi, S., Takuya Hoshii. Source/drain formation by using epitaxial regrowth of N+InP for III-V nmosfets, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 111-114, 2009.  公式リンク  
  
• Deura, M., Hoshii, T., Takenaka, M., Takagi, S., Nakano, Y., Sugiyama, M., Takuya Hoshii. Uniform InGaAs micro-discs on Si by micro-channel selective-area movpe, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 48-51, 2009.  公式リンク  
  

国内会議発表 (査読有り)

• Hoshii Takuya, SATOSHI SUGAHARA, Takagi Shin-ichi. Effect of tensile strain on gate current of strained-Si n-channel metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials), Japanese journal of applied physics Pt. 1 Regular papers, brief communications & review papers, Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics, Vol. 46, No. 4, pp. 2122-2126, Apr. 2007.

国際会議発表 (査読なし・不明)

• Y.-W. Lin, K. Mizutani, T. Hoshii, H. Wakabayashi, K. Tsutsui, Y.-F. Tsao, T.-J. Huang, H.-T. Hsu, K. Kakushima. Ferroelectric HfO2 Capacitors for Varctor Application in GHz, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.
• A. Miyata, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima. Photocurrent measurements of AlGaN/GaN HEMT under X-ray irradiation, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.
• "Atsuhiro Ohta, J. Song, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima". Electrical Characteristics of Atomic Layer Deposited Y-silicate Dielectrics, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.
• "Kazuto Mizutani, Yu-Wei Lin, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima". Observation of wake-up effect on ferroelectric Y:HfO2 thickness scaling, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.
• H. Nishida, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima. A simulation study on the transient leakage current analysis of a GaN epitaxial layer, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.
• Kazuto Mizutani, Yu Wei Lin, Takuya Hoshii, Hiroshi Funakubo, Hitoshi Wakabayashi, Kazuto Tsutsui, Kuniyuki Kakushima. Formation of Ferroelectric Y-doped HfO2 though Atomic Layer Deposition and Low Temperature Post Annealing, 2020 VLSI-TSA Symposium (The 2020 International Symposium on VLSI Technology, System and Applications), Aug. 2020.
• J. Molina, T. Mimura, Y. Nakamura, T. Shimizu, H. Funakubo, I. Fujiwara, T. Hoshii, S. Ohmi, A. Hori, H. Wakabayashi, K. Tsutsui, K. Kakushima. Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance, 2020 IMW (The 12th International Memory Workshop), May 2020.
• K. Tsutsui, K. Natori, T. Ogawa, T. Muro, T. Matsuishita, Y. Morikawa, T. Hoshii, K. Kakushima, H. Wakabayashi, K. Hayashi, F. Matsui, T. Kinoshita. Analyses of 3D Atomic Arrangements of Dopants in Si Crystal Using Spectro-photoelectron Holography, Material Resarch Meeing 2019 (MRM2019), Dec. 2019.
• K. Sasaki, J. Song, T. Hoshii, H. Wakabayashi, K. Tsutsui, I. Mizushima, T. Yoda, K. Kakushima. Minority Carrier Lifetime Extraction Methodology of SiC Epitaxial Layer, 235th ECS Meeting, May 2019.
• K. Hisatsune, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, K. Kakushima. Thickness Effects on Charge and Discharge Characteristics of CeOx MIM Capacitors, 235th ECS Meeting, May 2019.
• J. Molina, H. Iwatsuka, T. Hoshii, S. Ohmi, H. Funakubo, A. Hori, I. Fujiwara, H. Wakabayashi, K. Tsutsui, K. Kakushima. Ferroelectric Properties of Si doped HfO2 Thin Films with NiSi2 as Bottom Electrode, 235th ECS Meeting, May 2019.
• Takuya Hoshii, Shuma Tsuruta, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui. Performance Prediction of Scaled p-channel GaN MOSFET on Polarization Junction Platform, International Workshop on Nitride Semiconductors (IWN2018), Nov. 2018.
• Takuya Hamada, Hayato Mukai, Tokio Takahashi, Toshihide Ide, Mitsuaki Shimizu, Hiroki Kuroiwa, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, Kazuo Tsutsui. Electrical properties of selectively grown GaN channel for FinFETs, International Workshop on Nitride Semiconductors (IWN2018), Nov. 2018.
• Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita. Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography, International Conference on Solid-State Devices and Materials (SSDM2018), Sept. 2018.
• C. Y. Su, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima. Interface State Density of Atomic Layer Deposited Al2O3 on Beta-Ga2O3, ECS Meeting, May 2018.
• D. Saito, I. Muneta, T. Hoshii, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima. Reliability of SiC Schottky Diodes with Mo2C Electrode, ECS Meeting, May 2018.
• H. Kataoka, H. Iwai, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima. A Defect Density Profile Extraction Method for GaN Epi-Wafers, ECS Meeting, Apr. 2018.
• Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita. Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique, Intnational Workshop on Junction Technology (IWJT2018), Mar. 2018.
• K. Tsutsui, K. Kakushima, T. Hoshii, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai. 3D Scaling for Insulated Gate Bipolar Transistors (IGBTs) with Low Vce(sat), ASICON2017, Proceedings of International Conference on ASIC, Vol. 2017-October, pp. 1137-1140, Oct. 2017.  公式リンク  
  

国内会議発表 (査読なし・不明)

• 梶川 亮介, 川那子 高暢, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. トップゲートに自己整合したWOx S/Dを用いた30-50 nm膜厚WSe2バックチャネルpFET, 第84回応用物理学会秋季学術講演会, Sept. 2023.
• 水谷 一翔, 星井 拓也, 川那子 高暢, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. 希土類酸化物キャッピングによるY:HfO2キャパシタの信頼性改善, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 川那子 高暢, 梶川 亮介, 水谷 一翔, Tsai Sung Lin, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 阿野 響太郎, 星井 拓也, 若林 整, 筒井 一生, 依田 孝, 角嶋 邦之. ゲート付きSiC pnダイオードの電気特性評価, 第83回応用物理学会秋季学術講演会, Aug. 2022.
• 小森 勇太, 星井 拓也, 宮野 清孝, 津久井 雅之, 水島 一郎, 依田 孝, 角嶋 邦之, 若林 整, 筒井 一生. InAlN/AlN/GaN構造中2DEGにおける移動度のキャリア濃度依存性, 第69回応用物理学会春季学術講演会, Sept. 2021.
• 小森 勇太, 木村 安希, 星井 拓也, 宮野 清孝, 津久井 雅之, 水島 一郎, 依田 孝, 角嶋 邦之, 若林 整, 筒井 一生. InAlN/AlN/GaN構造におけるキャリア散乱要因のAlN層厚依存性, 第82回応用物理学会秋季学術講演会, Sept. 2021.
• 筒井一生, 濱田拓也, 高山 研, 金 相佑, 星井拓也, 角嶋邦之, 若林 整, 高橋言緒, 井手利英, 清水三聡. 選択成長法を用いたGaN 系FinFET, 電気学会電子デバイス研究会, Mar. 2021.
• 竹内走一郎, 古賀峻丞, 田中晶貴, 孫澤旭, 橋本由介, 星井拓也, 筒井一生, 松下智裕. AsおよびBを共ドープしたSi結晶中に存在するドーパントの構造解析, 日本物理学会第76回年次大会, Mar. 2021.
• 高山 研, 太田 貴士, 佐々木 満孝, 向井 勇人, 濱田 拓也, 高橋 言雄, 井出 利英, 清水 三聡, 星井 拓也, 角嶋 邦之, 若林 整, 筒井 一生. 選択成長法を用いたGaN FinFETの作製:リーク電流抑制の改良, 第81回応用物理学会秋季学術講演会, Sept. 2020.
• 筒井 一生, 松橋 泰平, 星井 拓也, 角嶋 邦之, 若林 整, 永山 勉, 樋口 隆弘, 加藤 慎一, 谷村 英昭, 室 隆桂之, 松下 智裕, 森川 良忠. AsおよびBの共ドープによるSi中Asクラスターの特性制御, 第81回応用物理学会秋季学術講演会, Sept. 2020.
• 木村 安希, 星井 拓也, 宮野 清孝, 津久井 雅之, 水島 一郎, 依田 孝, 角嶋 邦之, 若林 整, 筒井 一生. InAlN/(AlN)/GaN構造におけるキャリア移動度の温度依存性, 第81回応用物理学会秋季学術講演会, Sept. 2020.
• 久恒 悠介, 金 相佑, 星井 拓也, 角嶋 邦之, 若林 整, 筒井 一生. 横型GaN FinFETの構造最適化についての検討, 第81回応用物理学会秋季学術講演会, Sept. 2020.
• 木村 安希, 星井 拓也, 宮野 清孝, 布上 真也, 名古 肇, 水島 一郎, 依田 孝, 角嶋 邦之, 若林 整, 筒井 一生. InAlN/GaNヘテロ構造におけるキャリア輸送特性のAlNスペーサ層膜厚依存性, 第67回応用物理学会春期学術講演会, Mar. 2020.
• 松橋 泰平, 星井 拓也, 沖田 寛昌, 中島 昭, 角嶋 邦之, 若林 整, 筒井 一生. 分極接合基板における2DEG枯渇電圧の解析的導出, 第67回応用物理学会春期学術講演会, Mar. 2020.
• 渡辺正裕, 執行直之, 星井拓也, 古川和由, 角嶋邦之, 佐藤克己, 末代知子, 更屋拓哉, 高倉俊彦, 伊藤一夫, 福井宗利, 鈴木慎一, 竹内 潔, 宗田伊里也, 若林 整, 中島 昭, 西澤伸一, 筒井一生, 平本俊郎, 大橋弘通, 岩井洋. トレンチゲート型Si-IGBTの3次元精密TCADシミュレーション, 電子情報通信学会 SDM(シリコン材料・デバイス)研究会, 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 電子情報通信学会, Vol. 119, No. 273, pp. 45-48, Nov. 2019.
• 濱田 昌也, 松浦 賢太朗, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタ法と硫黄雰囲気アニールで成膜した高いホール効果移動度を持つ層状ZrS2膜, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 草深 一樹, Sunglin Tsai, 星井 拓也, 若林 整, 筒井 一生, 角嶋 邦之. スパッタリングによって形成したAlScN膜のリーク電流の評価, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 宋 ジンハン, 太田 惇丈, 星井 拓也, 若林 整, 筒井 一生, 角嶋 邦之. Y2O3/SiO2積層構造の絶縁膜を用いたMOS capacitorの特性評価, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 井上 毅哉, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の研究, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 沖田 寛昌, 星井 拓也, 松橋 泰平, Sanyal Indraneel, Chen Yu-Chih, Ju Ying-Hao, 中島 昭, 西澤 伸一, 大橋 弘通, 角嶋 邦之, 若林 整, Chyi Jen-Inn, 筒井 一生. TEGを用いたAlGaN/GaNヘテロ成長の2DEG側界面電荷への影響, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 木村 安希, 久永 真之佑, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. 部分的に薄層化したAlGaN 層によるAlGaN/GaN コンタクト抵抗低減効果の薄層領域パターン依存性, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 谷川 晴紀, 松浦 賢太朗, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. 正の閾値電圧のMetal-Top-Gate/High-k/スパッタMoS2の蓄積容量特性, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 堀口 大河, 濱田 拓也, 辰巳 哲也, 冨谷 茂隆, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタMoS2膜のSF6プラズマ処理によるシート抵抗低減, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 濱田 拓也, 堀口 大河, 辰巳 哲也, 冨谷 茂隆, 濱田 昌也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタMoS2膜のCl2プラズマ処理によるシート抵抗低減, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 蔡 松霖, 草深 一樹, 星井 拓也, 若林 整, 筒井 一生, 角嶋 邦之. スパッタリングを用いたAlScN膜の形成, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 神林 郁哉, 星井 拓也, 角嶋 邦之, 若林 整, 筒井 一生. Si(111)基板上GaNのためのMgF2バッファの検討, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 宮田 篤希, 齋藤 大樹, 星井 拓也, 若林 整, 筒井 一生, 角嶋 邦之. 4H-SiCエピタキシャル層によるX線検出に関する検討, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 西田 宗史, 星井 拓也, 片岡 寛明, 筒井 一生, 角嶋 邦之, 若林 整. ステップ電圧印加時の過渡電流測定によるGaN中のトラップ密度評価, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 太田 惇丈, 宋 禛漢, 星井 拓也, 若林 整, 筒井 一生, 角嶋 邦之. 原子層堆積法を用いたイットリウムシリケート薄膜の形成, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 向井 勇人, 髙山 研, 濱田 拓也, 高橋 言緒, 井手 利英, 清水 三聡, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. 選択成長法を用いたGaN FinFETの作製, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 高山 研, 向井 勇人, 濱田 拓也, 高橋 言緒, 井手 利英, 清水 三総, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. GaN Fin構造選択成長における低抵抗領域の発生原因の検討, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 松橋 泰平, 星井 拓也, 沖田 寛昌, Indraneel Sanyal, Yu-Chih Chen, Ying-Hao Ju, 中島 昭, 角嶋 邦之, 若林 整, Jen-Inn Chyi, 筒井 一生. TEGを用いたGaN/AlGaNヘテロ成長の2DHG側界面電荷への影響, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 平本 俊郎, 更屋 拓哉, 伊藤 一夫, 高倉 俊彦, 福井 宗利, 鈴木 慎一, 竹内 潔, 附田 正則, 沼沢 陽一郎, 佐藤 克己, 末代 知子, 齋藤 渉, 角嶋 邦之, 星井 拓也, 古川 和由, 渡辺 正裕, 執行 直之, 若林 整, 筒井 一生, 岩井 洋, 小椋 厚志, 西澤 伸一, 大村 一郎, 大橋 弘通. 依頼講演 5Vゲート駆動による3300VスケーリングIGBTのスイッチング動作 (情報センシング), 映像情報メディア学会技術報告 = ITE technical report, 映像情報メディア学会, Vol. 43, No. 25, pp. 31-34, Aug. 2019.
• 更屋 拓哉, 伊藤 一夫, 高倉 俊彦, 福井 宗利, 鈴木 慎一, 竹内 潔, 附田 正則, 沼沢 陽一郎, 佐藤 克己, 末代 知子, 齋藤 渉, 角嶋邦之, 星井 拓也, 古川 和由, 渡辺正裕, 執行 直之, 筒井一生, 岩井洋, 小椋 厚志, 西澤 伸一, 大村 一郎, 大橋 弘通, 平本 俊郎. 5Vゲート駆動1200V級スケーリングIGBTの動作実証とスイッチング損失の低減 (シリコン材料・デバイス), 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 電子情報通信学会, Vol. 118, No. 429, pp. 39-44, Aug. 2019.
• 平本 俊郎, 更屋 拓哉, 伊藤 一夫, 高倉 俊彦, 福井 宗利, 鈴木 慎一, 竹内 潔, 附田 正則, 沼沢 陽一郎, 佐藤 克己, 末代 知子, 齋藤 渉, 角嶋 邦之, 星井 拓也, 古川 和由, 渡辺 正裕, 執行 直之, 若林 整, 筒井 一生, 岩井 洋, 小椋 厚志, 西澤 伸一, 大村 一郎, 大橋 弘通. 5Vゲート駆動による3300VスケーリングIGBTのスイッチング動作 (シリコン材料・デバイス), 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 電子情報通信学会, Vol. 119, No. 161, pp. 31-34, July 2019.
• 平本 俊郎, 更屋 拓哉, 伊藤 一夫, 高倉 俊彦, 福井 宗利, 鈴木 慎一, 竹内 潔, 附田 正則, 沼沢 陽一郎, 佐藤 克己, 末代 知子, 齋藤 渉, 角嶋 邦之, 星井 拓也, 古川 和由, 渡辺 正裕, 執行 直之, 若林 整, 筒井 一生, 岩井 洋, 小椋 厚志, 西澤 伸一, 大村 一郎, 大橋 弘通. 依頼講演 5Vゲート駆動による3300VスケーリングIGBTのスイッチング動作 (集積回路), 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 電子情報通信学会, Vol. 119, No. 162, pp. 31-34, July 2019.
• 星井 拓也, 中島 昭, 西澤 伸一, 大橋 弘通, 角嶋 邦之, 若林 整, 筒井 一生. 分極接合基板におけるAlGaN/GaNヘテロ界面の欠陥電荷評価, 日本結晶成長学会ナノエピ分科会 第11回ナノ構造・エピタキシャル成長講演会, June 2019.
• 筒井一生, 松下 智裕, 名取 鼓太郞, 小川 達博, 室 隆桂之, 森川 良忠, 星井 拓也, 角嶋邦之, 若林整, 林 好一, 松井 文彦, 木下 豊彦. 光電子ホログラフィー法によるシリコン中に高濃度ドープされた活性および不活性な不純物原子の三次元原子配列構造の観測, 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 電子情報通信学会, Vol. 119, No. 96, pp. 23-27, June 2019.
• 濱田 拓也, 向井 勇人, 高橋 言緒, 井手 利英, 清水 三聡, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. FinFET応用に向けた選択成長GaNチャネルの電気特性, 第66回応用物理学会春期学術講演会, Mar. 2019.
• 筒井 一生, 松下 智裕, 名取 鼓太郞, 小川 達博, 室 隆桂之, 森川 良忠, 星井 拓也, 角嶋 邦之, 若林 整, 林 好一, 松井 文彦, 木下 豊彦. 光電子ホログラフィーによる半導体中の不純物の3Ｄ原子イメージング, 第66回応用物理学会春期学術講演会, Mar. 2019.
• 筒井 一生, 松下 智裕, 名取 鼓太郞, 室 隆桂之, 森川 良忠, 星井 拓也, 角嶋 邦之, 若林 整, 林 好一, 松井 文彦, 木下 豊彦. 光電子分光ホログラフィーによるAsドープSi中のドーパント複数サイトの原子配列イメージング, 第66回応用物理学会春期学術講演会, Mar. 2019.
• 筒井一生, 松下智裕, 室隆桂之, 森川良忠, 名取鼓太郎, 小川達博, 星井拓也, 角嶋邦之, 若林整, 林好一, 松井文彦, 木下豊彦. 光電子ホログラフィー法によるシリコン中にドープされた不純物の三次元原子配列構造の解析, 応用物理学会シリコンテクノロジー分科会第216回研究集会, Feb. 2019.
• 鶴田 脩真, 星井 拓也, 中島 昭, 西澤 伸一, 大橋 弘通, 角嶋 邦之, 若林 整, 筒井 一生. AlGaN/GaN 界面準位が分極接合基板上 p-MOSFET の電流特性に与える影響, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 岩塚 春樹, 星井 拓也, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. Siを導入したHfO2のMIMキャパシタの容量特性, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 神林 郁哉, 星井 拓也, 角嶋 邦之, 若林 整, 筒井 一生. Si(111)基板上に成長したInAs極薄膜のラマン分光法による歪み評価, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 井上 毅哉, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の基礎的検討, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 佐々 康平, 久恒 和也, 星井 拓也, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. 酸化セリウムを挿入したMIMキャパシタの充放電特性, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 清水 孝, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. TMAHによる表面処理のp型GaN/金属コンタクト特性への影響, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 谷川 晴紀, 松浦 賢太朗, 濱田 昌也, 坂本 拓朗, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 向井 勇人, 濱田 拓也, 高橋 言緒, 井出 利英, 清水 三聡, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. 立体チャネルトランジスタ応用に向けた選択成長GaNの異方性エッチング, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 佐々木 杏民, 星井 拓也, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. n型SiCのエピタキシャル層の正孔ライフタイムがpnダイオード特性に与える影響, Sept. 2018.
• 久恒 和也, 星井 拓也, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. CeOxを挿入したMIMキャパシタの静電容量の過渡応答特性, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 久永 真之佑, 渡部 拓巳, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. 凹凸AlGaN層導入によるAlGaN/GaN HEMT構造のコンタクト抵抗低減手法におけるドットアレイ状平面パターンのサイズ効果, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 小川 達博, 名取 鼓太郎, 星井 拓也, 仲武 昌史, 渡辺 義夫, 永山 勉, 樋口 隆弘, 加藤 慎一, 谷村 英昭, 角嶋 邦之, 若林 整, 筒井 一生. フラッシュランプアニールおよびポストアニールで活性/不活性化したSi中Asの軟X線光電子分光による評価, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 濱田拓也, 向井勇人, 高橋言緒, 井手利英, 清水三聡, 星井拓也, 角嶋邦之, 若林整, 岩井洋, 筒井一生. FinFET応用に向けた選択成長GaNチャネルの電気特性, 第82回半導体・集積回路シンポジウム, Aug. 2018.
• Chen-Yi Su, Takuya Hoshii, Iriya Muneta, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima. Initial trap and hysteresis analysis of Atomic Layer Deposited Al2O3 on b-Ga2O3, 65th JSAP Spring meeting, Mar. 2018.
• 筒井一生, 角嶋邦之, 星井 拓也, 中島 昭, 西澤 伸一, 若林整, 宗田伊理也, 佐藤 克己, 末代 知子, 齋藤 渉, 更屋 拓哉, 伊藤 一夫, 福井 宗利, 鈴木 慎一, 小林 正治, 高倉 俊彦, 平本 俊郎, 小椋 厚志, 沼沢 陽一郎, 大村 一郎, 大橋 弘通, 岩井洋. 三次元スケーリングによるIGBTのV[CEsat]低減の実験的検証 (電子デバイス 半導体電力変換合同研究会 パワーデバイス・パワーエレクトロニクスとその実装技術), 電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan, 電気学会, Vol. 2017, No. 74, pp. 1-6, Nov. 2017.
• 筒井 一生, 角嶋 邦之, 星井 拓也, 中島 昭, 西澤 伸一, 若林 整, 宗田 伊理也, 佐藤 克己, 末代 知子, 齋藤 渉, 更屋 拓哉, 伊藤 一夫, 福井 宗利, 鈴木 慎一, 小林 正治, 高倉 俊彦, 平本 俊郎, 小椋 厚志, 沼沢 陽一郎, 大村 一郎, 大橋 弘通, 岩井 洋. 三次元スケーリングによるIGBTのV[CEsat]低減の実験的検証, 電気学会研究会資料. SPC = The papers of technical meeting on semiconductor power converter, IEE Japan, 電気学会, Vol. 2017, No. 173, pp. 1-6, Oct. 2017.
• 高山 留美, 星井 拓也, 中島 昭, 西澤 伸一, 大橋 弘通, 角嶋 邦之, 若林 整, 筒井 一生. 分極接合基板上pチャネルGaN MOS構造の容量特性についての検討 (シリコン材料・デバイス), 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 電子情報通信学会, Vol. 117, No. 101, pp. 31-34, May 2017.
• 龍口 傑, 星井 拓也, 宗田 伊理也, 若林 整, 筒井 一生, 岩井 洋, 角嶋 邦之. 横型Siナノウォール太陽電池の発電特性に関する検討, 第64回応用物理学会春季学術講演会, Mar. 2017.
• 安田 哲二, 宮田 典幸, 卜部 友二, 石井 裕之, 板谷 太郎, 前田 辰郎, 山田 永, 福原 昇, 秦 雅彦, 大竹 晃浩, 星井 拓也, 横山 正史, 竹中 充, 高木 信一. High-k/III-V 界面の組成・構造とMIS特性との関係, 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス, 一般社団法人電子情報通信学会, Vol. 110, No. 90, pp. 49-54, May 2010.
• 出浦 桃子, 近藤 佳幸, 星井 拓也, 竹中 充, 高木 信一, 中野 義昭, 杉山 正和. 微小領域選択MOVPEにおけるSi上InGaAsの原子構造と光学特性解析, 化学工学会 研究発表講演要旨集, 公益社団法人 化学工学会, Vol. 2009, No. 0, pp. 2-2, 2009.
• 出浦 桃子, 星井 拓也, 杉山 正和, 中根 了昌, 菅原 聡, 竹中 充, 高木 信一, 中野 義昭. 微小領域選択成長によるSi上III/V化合物半導体層の形成, 化学工学会 研究発表講演要旨集, 公益社団法人 化学工学会, Vol. 2008, No. 0, pp. 208-208, 2008.
• 出浦 桃子, 星井 拓也, 竹中 充, 高木 信一, 中野 義昭, 杉山 正和. Si上InGaAsの微小領域選択MOVPEにおける横方向成長促進と均一性向上, 化学工学会 研究発表講演要旨集, 公益社団法人 化学工学会, Vol. 2009, No. 0, pp. 8-8.

特許など

• 星井拓也, 筒井一生. ｐチャネルＧａＮＭＯＳデバイス及びその製造方法. 特許. 公開. 国立大学法人東京工業大学. 2021/08/25. 特願2021-137005. 2023/03/09. 特開2023-031488. 2023.

学位論文

• 高品質InGaAs MOS界面形成のためのInGaAs表面制御についての研究,  本文,  博士(工学),  東京大学,  2011/03/24, 

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