論文

• Takanori Mimura, Reijiro Shimura, Akinori Tateyama, Yoshiko Nakamura, Takahisa Shiraishi, Hiroshi Funakubo. No-Heating deposition of ferroelectric x%Y-doped (100–x%)(Hf1−yZry)O2 films, Phys. Status Solidi A, 2023, 2300100-1-6, May 2023.
• Takanori Mimura, Yuki Tashiro, Takao Shimizu, Hiroshi Funakubo. Systematic Investigation of Ferroelectric Properties in x%YO1.5-(100-x%)Hf1-yZryO2 Films, ACS Appl. Electron. Mater., 5, 3, 1600-1605, Feb. 2023.
• Takanori Mimura, Takao Shimizu, Hiroshi Funakubo. Preparation of orthorhombic Y-doped TaON film, J Ceram Soc. Jpn., Vol. 130, No. 7, pp. 432-435, July 2022.
• Yongtao Liu, Kyle P. Kelley, Rama K. Vasudevan, Hiroshi Funakubo, Shelby S. Fields, Takanori Mimura, Susan Trolier-McKinstry, Jon F. Ihlefeld, Maxim Ziatdinov, Sergei V. Kalinin. Machine Learning-Driven Automated Scanning Probe Microscopy for Ferroelectrics, Microsc. Microanal., Vol. 28, 2924, July 2022.
• Yoshiomi Hiranaga, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho. Nanoscale Mapping Concerning Asymmetry of Local C-V Curves in Ferroelectric Materials, Jpn. J. Appl. Phy., Vol. 61, pp. SN1014-1-8, July 2022.
• Reijiro Shimura, Takanori Mimura, Akinori Tateyama, Takahisa Shiraishi, Takao Shimizu, Tomoaki Yamada, Yoshitomo Tanaka, Yukari Inoue, Hiroshi Funakubo. No-Heating Deposition of 1-μm-Thick Y-Doped HfO2 Ferroelectric Films with Good Ferroelectric and Piezoelectric Properties by Radio Frequency Magnetron Sputtering Method, Phys. Status Solidi RRL, Early View, Jan. 2022.
• Tomoya Sato, Masanori Kodera, Daichi Ichinose, Takanori Mimura, Takao Shimizu, Tomoaki Yamada, Hiroshi Funakubo. Domain structures induced by tensile thermal strain in epitaxial PbTiO3 films on silicon substrates, J. Appl. Phys., Vol. 131, pp. 035301-1-9, Jan. 2022.
• Pratyush Buragohain, Adam Erickson, Takanori Mimura, Hiroshi Funakubo, Alexei Gruverman. Effect of film microstructure on the polarization switching behavior in ferroelectric Y:HfO2 thin films, Adv Functional Material, No. 2108876, Nov. 2021.
• Takanori Mimura, Takao Shimizu, Yoshio Katsuya, Osami Sakata, Hiroshi Funakubo. Thickness dependence of phase stability in epitaxial (HfxZr1-x)O2 films, Physical review materials, Vol. 5, pp. 114407, Nov. 2021.
• Hiranaga Yoshiomi, Mimura Takanori, Shimizu Takao, Funakubo Hiroshi, Cho Yasuo. High-precision Local C-V Mapping for Ferroelectrics Using Principal Component Analysis, Jpn. J. Appl. Phys., Vol. 60, pp. SFFB09-1-8, Aug. 2021.
• Yuki Tashiro, Takao Shimizu, Takanori Mimura, Hiroshi Funakubo. Comprehensive study on the kinetic formation of the orthorhombic ferroelectric phase in epitaxial Y-doped ferroelectric HfO2 thin films, ACS Applied Electronic Materials 2021, Vol. 3, No. 7, pp. 3123-3130, June 2021.
• Yuki Tashiro, Takao Shimizu, Takanori Mimura, Hiroshi Funakubo. Comprehensive study on the kinetic formation of the orthorhombic ferroelectric phase in epitaxial Y-doped ferroelectric HfO2 thin films, ACS Applied Electronic Materials 2021, Vol. 3, No. 7, pp. 3123-3130, June 2021.
• Takanori Mimura, Takao Shimizu, Osami Sakata, Hiroshi Funakubo. Large Thermal hysteresis of ferroelectric transition in HfO2-based ferroelectric films, Appl. Phys. Let., vol. 118, pp. 112903, Mar. 2021.
• Reijiro Shimura, Takanori Mimura, Akinori Tateyama, Takao Shimizu, Tomoaki Yamada, Hiroshi Funakubo. Preparation of 1 μm-thick Y-doped HfO2 ferroelectric films on (111)Pt/TiOx/SiO2/(001)Si substrates by a sputtering method and their ferroelectric and piezoelectric properties, Jpn. J. Appl. Phys., vol. 60, pp. 031009, Mar. 2021.
• Takao Shimizu, Yuki Tashiro, Takanori Mimura, Takanori Kiguchi, Takahisa Shiraishi, Toyohiko J. Konnno, Osami Sakata, Hiroshi Funakubo. Electric-field-induced ferroelectricity in 5%Y-doped Hf0.5Zr0.5O2: Transformation from the paraelectric tetragonal phase to the ferroelectric orthorhombic phase, Physica Status Solidi, vol. 15, no. 5, pp. 2000589-1-7, Feb. 2021.
• Yoshiomi Hiranaga, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho. Local C-V mapping for ferroelectrics using scanning nonlinear dielectric microscopy, J. Appl. Phys., vol. 128, pp. 244105, Dec. 2020.
• Reijiro Shimura, Takanori Mimura, Takao Shimizu, Yoshitomo Tanaka, Yukari Inoue, Hiroshi Funakubo. Preparation of near-1-μm-thick {100}-oriented epitaxial Y-doped HfO2 ferroelectric films on (100)Si substrates by an RF magnetron sputtering method, J.Ceram. Soc. Jpn, vol. 128, no. 8, pp. 539-543, Aug. 2020.
• Takanori Mimura, Takao Shimizu, Yoshio Katsuya, Osami Sakata, Hiroshi Funakubo. Thickness- and orientation- dependences of Curie temperature in ferroelectric epitaxial Y doped HfO2 films, Jpn. J. Appl. Phys., Vol. 59, pp. SGGB04-1-6, Feb. 2020.
• Takanori Mimura, Takao Shimizu, Hiroshi Uchida, Hiroshi Funakubo. Room-temperature deposition of ferroelectric HfO2-based films by the sputtering metho, Appl. Phys. Lett., Vol. 116, pp. 062901-1-5, Feb. 2020.
• Tomoya Sato, Takanor Kiguchi, Toyohiko Konno, Junichi Kimura, Daichi Ichinose, Takanori Mimura, Hiroshi Funakubo, Kiyoshi Uchiyama. Growth of (110)-one-axis-oriented perovskite-type oxide thin films with local epitaxy on (111)SrTiO3 single crystal substrates, Jpn. J. Appl. Phys., Vol. 58, pp. SLLB01, Aug. 2019.
• Takanori Mimura, Takao Shimizu, Hiroshi Funakubo. Ferroelectricity in YO1.5-HfO2 films around 1 μm in thickness, Appl. Phys. Lett., Vol. 115, pp. 032901, July 2019.
• Takanori Mimura, Takao Shimizu, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Yoshio Katsuya, Osami Sakata, Hiroshi Funakubo. Effects of heat treatment and in-situ high temperature XRD study on the formation of ferroelectric epitaxial Y doped HfO2 film., Jpn. J. Appl. Phys., Vol. 58, pp. SBBB09-1-5, Feb. 2019.
• Takao Shimizu, Takanori Mimura, Takanori Kiguchi, Takahisa Shiraishi, Toyohiko Konno, Yoshio Katsuya, Osami Sakata, Hiroshi Funakubo. Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films, Appl. Phys. Lett., Vol. 113, pp. 212901-1-5, Nov. 2018.
• Taisei Suzuki, Takao Shimizu, Takanori Mimura, Hiroshi Uchida, Hiroshi Funakubo. Epitaxial ferroelectric Y-doped HfO2 film grown by the RF magnetron sputtering, Jpn. J. Appl. Phys., Vol. 57, pp. 11UF15-1-4, Oct. 2018.
• Takanori Mimura, Takao Shimizu, Hiroshi Uchida, Osami Sakata, Hiroshi Funakubo. Thickness-dependent crystal structure and electric properties of epitaxial ferroelectric Y2O3-HfO2 films, Appl. Phys. Lett., Vol. 113, pp. 102901-1-4, Sept. 2018.
• Tomoya Sato, Daichi Ichinose, Naoya Oshima, Takanori Mimura, Yuichi Nemoto, Takao Shimizu, Yasuhiko Imai, Hiroshi Uchida, Osami Sakata, Hiroshi Funakubo. Time response demonstration of in-situ lattice deformation under an applied electric field using synchrotron-based time-resolved XRD in polar-axis-oriented epitaxial Pb(Zr,Ti)O3 film, Jpn. J. Appl. Phys., Vol. 57, pp. 0902B8-1-5, June 2018.
• Yoshiomi Hiranaga, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho. Dynamic observation of ferroelectric domain switching using scanning nonlinear dielectric microscopy, Jpn. J. Appl. Phys., vol. 56, pp. 10PF16-1-7, Sept. 2017.
• Tomoya Sato, Daichi Ichinose, Junichi Kimura, Takaaki Inoue, Takanori Mimura, Hiroshi Funakubo, Kiyoshi Uchiyama. Fabrication of (110)-one-axis-oriented perovskite-type oxide thin films and their application to buffer layer, Jpn. J. Appl. Phys., vol. 55, pp. 10TA19-1-4, Sept. 2016.
• Takanori Mimura, Kiliha Katayama, Takao Shimizu, Hiroshi Uchida, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Osami Sakata, Hiroshi Funakubo. Formation of (111) orientation-controlled ferroelectric orthorhombic HfO2 thin films from solid phase via annealing, Appl. Phys. Lett., vol. 109, pp. 052903-1-4, Aug. 2016.

国際会議発表 (査読有り)

• Yoshiomi Hiranaga, Yuki Noguchi, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho. Research on Correlation Between Grain Boundaries and Ferroelectric Switching Behaviors Through Statistical Analysis of Local C-V Map Datasets, ISAF 2023 (IEEE International Symposium on Applications of Ferroelectrics), July 2023.
• Pratyush P. Buragohain, Sangita Dutta, Haidong Lu, Sebastjan Glinsek, Hugo Aramberri, Claudia Richter, Pamenas Kariuki, Terence Mittmann, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Uwe Schroeder, Emmanuel Defay, Jorge Iniguez, Alexei Gruverman. Observation of Negative Piezoelectricity in HfO2-Based Thin-Film Capacitors, 2022 MRS Spring Meeting & Exhibit, May 2022.
• Pratyush P. Buragohain, Adam Erickson, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Alexei Gruverman. Intrinsic Switching in Ferroelectric Y:HfO2 Thin Film Capacitors, 2022 MRS Spring Meeting & Exhibit, May 2022.
• Y. Hiranaga, T. Mimura, T. Shimizu, H. Funakubo, Y. Cho. Ferroelectric Probe Data Storage Using HfO2-Based Thin-Film Recording Media, 2017 Joint IEEE ISAF-IWATMD-PFM Conference, May 2017.
• Y. Hiranaga, T. Mimura, T. Shimizu, H. Funakubo, Y. Cho. Dynamic Observation of Nanoscale Domain Switching Behaviors in Ferroelectric HfO2 films Using Scanning Nonlinear Dielectric Microscopy, 2017 Joint IEEE ISAF-IWATMD-PFM Conference, May 2017.
• Takanori Mimura, Kiriha Katayama, Takao Shimizu, Takanori Kiguchi, Akihiko Akama, Toyohiko J. Konno, Osami Sakata, Hiroshi Funakubo. Stability of Ferroelectric Phase in Epitaxial HfO2-based Films, 2017 Joint IEEE ISAF-IWATMD-PFM Conference, May 2017.

国際会議発表 (査読なし・不明)

• Hiroshi Funakubo, Takao Shimizu, Takanori Mimura, Kazuki Okamoto. Ferroelectric and Piezoelectric Properties of Non-perovskite Simple Oxide, MRM2023/IUMRS-ICA2023, Dec. 2023.
• Hiroshi Funakubo, Yuma Takahashi, Takahisa Shiraishi, Kodera Masanori, Reijiro Shimura, Takanori Mimura, Keisuke Ishihama, Kazuki Okamoto, Hiroki Moriwake, Ayako Taguchi, Takao Shimizu, Yasuhiro Fujii, Akitoshi Koreeda. Stabilization and Identification of Ferroelectric HfO2 Thin Films, IWDTF2023 (2023 International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology), Oct. 2023.
• H. Funakubo, T. Shimizu, T. Mimura, T. Shiraishi, K. Okamoto. Impact of electric field on crystal structure and properties of HfO2-based ferroelectric films, E-MRS 2023 Fall Meeting, Sept. 2023.
• Takao Shimizu, Yuki Tashiro, Takanori Mimura, Hiroshi Funakubo. Kinetic formation and field induced phase transition in ferroelectric HfO2- based materials, KJC-FE13 (The 13th Korea-Japan Conference on Ferroelectrics), Sept. 2022.
• Pratyush Buragohain, Sangita Dutta, Haidong Lu, Sebastjan Glinšek, Hugo Aramberri, Claudia Richter, Terrence Mittmann, Pamenas Kariuki, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Uwe Schroeder, Emmanuel Defay. Observation of Negative Piezoelectricity in HfO2-Based Thin Film Capacitors, 2022 ISAF-PFM-ECAPD Joint Conference, June 2022.
• Takao Shimizu, Yuki Tashiro, Takanori Mimura, Hiroshi Funakubo. Ferroelectricity induced by the kinetic formation in Y-HfO2 epitaxial films, MRM 2021 (Materials Research Meeting 2021), Dec. 2021.
• Hiranaga Y., Mimura T., Shimizu T., Funakubo H., Cho Y.. Nanoscale Domain Dynamics Characterization Using Local C-V Mapping, ISyDMA’6 (Sixth International Symposium on Dielectric Materials and Applications), Dec. 2021.
• Funakubo, H., Shimura, R., Mimura, T., Tateyama, A., Nakamura, Y., Shimizu, T., Yamada, T., Tanaka, Y., Inoue, Y.. Low temperature preparation of thick Y-HfO2 ferroelectric films, E-MRS (2021 Fall Meeting of the European Materials Research Society), Sept. 2021.
• Shimizu, T., Tashiro Y., Takanori M., Shiraishi T., Kiguchi T., Konno T. J., Sakata O., Funakubo H.. Field-Induced Structural Change in HfO2-Based Ferroelectric Materials, E-MRS (2021 Fall Meeting of the European Materials Research Society), Sept. 2021.
• Hiroshi Funakubo, Yuki Tashiro, Takanori Mimura, Takao Shimizu. Phase stability of ferroelectric HfO2-based films, AWAD 2021 (2021 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices), Aug. 2021.
• Takao Shimizu, Takanori Mimura, Yuki Tashiro, Takanori Kiguchi, Takahisa Shiraishi, Toyohiko J. Konno, Osami Sakata, Hiroshi Funakubo. Field-induced structural change in HfO2-based ferroelectric materials, 2021 ISAF-ISIF-PFM Joint Conference, May 2021.
• Yoshiomi Hiranaga, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho. Local C-V Characterization for Ferroelectric Films, 2021 ISAF-ISIF-PFM Joint Conference, May 2021.
• Shimizu, T., Mimura, T., Tashiro, Y., Sakata, O., Funakubo, H. Phase transition in HfO2 ferroelectric materials investigated by XRD study, E-MRS (2021 Spring Meeting of the European Materials Research Society), May 2021.
• Hiroshi Funakubo, Takanori Mimura, Reijiro Shimura, Yoshiko Nakamura, Takao Shimizu. Stability and Room Temperature Deposition of Ferroelectric Phase in Y-Doped (Hf, Zr)O2 Films, 2021 Virtual MRS Spring Meeting & Exhibit, Apr. 2021.
• Takao Shimizu, Takanori Mimura, Yuki Tashiro, Takahisa Shiraishi, Takanori Kiguchi, Toyohiko J. Konno, Osami Sakata, Yoshio Katsuya, Hiroshi Funakubo. Structure Change in the HfO2 Ferroelectric Materials Induced by an Electric Field, ICC8 (8th International Congress on Ceramics), Apr. 2021.
• Takanori Mimura, Takao Shimizu, Hiroshi Funakubo. Thickness and composition dependences of epitaxial ferroelectric HfO2 based films, EMA2021 (Electronic Materials and Applications 2021), Jan. 2021.
• Hiroshi Funakubo, Takanori Mimura, Takao Shimizu. High stability of Ferroelectric phase in Y-doped HfO2 films, Electroceramics XVII, Aug. 2020.
• J. Molina, T. Mimura, Y. Nakamura, T. Shimizu, H. Funakubo, I. Fujiwara, T. Hoshii, S. Ohmi, A. Hori, H. Wakabayashi, K. Tsutsui, K. Kakushima. Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance, 2020 IMW (The 12th International Memory Workshop), May 2020.
• Hiroshi Funakubo, Takanori Mimura, Takao Shimizu. Phase stability and property control of ferroelectric HfO2 films, MRM2019 (Materials Resezrh Meeting 2019), Dec. 2019.
• Takao Shimizu, Yoshitaka Ehara, Takanori Mimura, Shintaro Yasui, Tomoaki Yamada, Yasuhiko Imai, Yoshio Katsuya, Osami Sakata, Hiroshi Funakubo. The Domain Switching in Rhombohedral PZT Observed by In Situ X-Ray Diffraction Study by Various Frequencies, 2019 MRS Fall Meeting & Exhibi, Dec. 2019.
• Yu-ki Tashiro, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo. Preparation and Characterization of Y, Zr-doped HfO2 Thin Film by PLD Method, 19th US-Japan Seminar on Dielectric and Piezoelectric Ceramics, Nov. 2019.
• Takanori Mimura, Takao Shimizu, Yoshio Katsuya, Osami Sakata, Hiroshi Funakubo. Stability of Ferroelectric Orthorhombic Phase in Epitaxial HfO2-based Films, 19th US-Japan Seminar on Dielectric and Piezoelectric Ceramics, Nov. 2019.
• Takao Shimizu, Takanori Mimura, Hiroshi Funakubo. Recent Progress on Ferroelectric HfO2 Epitaxial Films, 19th US-Japan Seminar on Dielectric and Piezoelectric Ceramics, Nov. 2019.
• Takao Shimizu, Takanori Mimura, Hiroshi Funakubo. The phase stability and epitaxial growth of HfO2-based ferroelectric materials, PACRIM13 (The 13th Pacific Rim Conference of Ceramic Societies), Oct. 2019.
• Takanori Kiguchi, Takahisa Shiraishi, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Toyohiko J. Konno. Nanodomain Structure of Ferroelectric HfO2-Based Epitaxial Thin Films, PACRIM13 (The 13th Pacific Rim Conference of Ceramic Societies), Oct. 2019.
• T. Mimura, T. Shimizu, Y. Katsuya, O. Sakata, H. Funakubo. Thickness- and orientationdependence of Curie temperature of ferroelectric epitaxial HfO2 based films, SSDM 2019 (2019 International Conference on Solid State Devices and Materials), Sept. 2019.
• Yu-ki Tashiro, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo. Preparation and characterization of Y, Zr-doped HfO2 thin films by PLD method, CJFMA11 (The 11th China and Japan Symposium on Ferroelectric Materials and TheirApplications), Sept. 2019.
• Takao Shimizu, Takanori Mimura, HIROSHI FUNAKUBO. Preparation of ferroelecttic HfO2 film with a nm-order thickness, CJFMA11 (The 11th China and Japan Symposium on Ferroelectric Materials and TheirApplications), Sept. 2019.
• Hiroshi Funakubo, Takanori Mimura, Takao Shimizu. Fundamental Characteristics of Ferroelectric HfO2 Using Epitaxial Films, Asia-Pacific PFM 2019, Aug. 2019.
• Takanori Mimura, Takao Shimizu, Hiroshi Funakubo. Thickness-dependent crystal structure of epitaxial ferroelectric 0.07YO1.5-0.93HfO2 and HZO films, ISIF 2019 (7th International Symposium on Intagrated Functionalities), Aug. 2019.
• Takanori Kiguchi, Takahisa Shiraishi, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Toyohiko J. Konno. Nanostructure Analyses of Hafnia-Based Ferroelectric Thin Films by Aberration-Corrected Electron Microscopy, PRICM 10 (The 10th International Conference Pacific Rim on Advanced Materials and Processing), Aug. 2019.
• Takao Shimizu, Takanori Mimura, Hiroshi Funakubo. Ferroelectricity in thick HfO2-based films, ISIF 2019 (7th International Symposium on Intagrated Functionalities), Aug. 2019.
• Takao Shimizu, Takanori Mimura, Hiroshi funakubo. Robust ferroelectricity in thick HfO2-based film, STAC-11 (The 11th International Conference on the Science and Technology for Advanced Ceramics), July 2019.
• Takao Shimizu, Takanori Mimura, Hiroshi Funakubo. Robust Ferroelectricity in Y-Doped HfO2 Films, F2cπ2 2019 (Joint ISAF-ICE-EMF-IWPM-PFM meeting 2019), July 2019.
• Hiroshi Funakubo, Takanori Mimura, Takao Shimizu. Property Control of Ferroelectric HfO2 Films, EM-NANO 2019 (The Seventh International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies), June 2019.
• Hiroshi Funakubo, Takao Shimizu, Takanori Mimura. Phase Stability of HfO2-based Ferroelectric Materials and Their Property Control, 2018 KPS Fall Meeting, Oct. 2018.
• Taisei Suzkuki, Takanori Mimura, Takao Shimizu, Hiroshi Uchida, Hiroshi Funakubo. Growth of epitaxial Y2O3-doped ferroelectric HfO2 films by sputtering method and their characterization, SSDM 2018 (2018 International Conference on Solid State Devices and Materials), Sept. 2018.
• Takanori Mimura, Takao Shimizu, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Yoshio Katsuya, Osami Sakata, Hiroshi Funakubo. Effects of heat treatment and in situ high temperature XRD study on the formation of ferroelectric epitaxial HfO2 based film, SSDM 2018 (2018 International Conference on Solid State Devices and Materials), Sept. 2018.
• T. Mimura, T. Shimizu, T. Kiguchi, A. Akama, T. J. Konno, Y. Katsuya, O. Sakata, H. Funakubo. Temperature Stability of Ferroelectric Phase of Epitaxial Y-doped HfO2 Films, IFAAP 2018 (2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference), May 2018.
• T. Kiguchi, T. Shiraishi, T. Shimizu, T. Mimura, H. Funakubo, T. J. Konn. Electron Microscopic Study on Domain Structure in HfO2, IFAAP 2018 (2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference), May 2018.
• T. Shimizu, T. Mimura, T. Kiguchi, T. Shiraishi, A. Akama, T. J. Konno, O. Sakata, K. Yoshio, H. Funakubo. Domain switching in epitaxial ferroelectric HfO2 films, 2018 Conference on Electronic and Advanced Materials, Jan. 2018.
• Takanori Mimura, Kiriha Katayama, Takao Shimizu, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Osami Sakata, Hiroshi Funakubo. Thickness-dependent phase stability of epitaxial ferroelectric HfO2-based films, STAC-10 (The Tenth International Conference on the Science and Technology for Advanced Ceramics), Aug. 2017.
• Tomoya Sato, Daichi Ichinose, Naoya Oshima, Takanori Mimura, Yuichi Nemoto, Takao Shimizu, Yasuhiko Imai, Hiroshi Uchida, Osami Sakata, Hiroshi Funakubo. Time Response of Crystal Structure in Tetragonal Pb(Zr,Ti)O3 Films Under an Applied Electric Field, STAC-10 (The Tenth International Conference on the Science and Technology for Advanced Ceramics), Aug. 2017.
• Hiroshi Funakubo, Takao Shimizu, Kiliha Katayama, Takanori Mimura, Takanori Kiguchi, Takahisa Shiraishi, Akihiro Akama, Toyohiko J. Konno, Osami Sakata. Phase stability and Property design in HfO2-based ferroelectric thin films, ICE 2017 (8th International Conference on Electroceramics), May 2017.
• Hiroshi Funakubo, Takanori Mimura, Takao Shimizu, Kiliha Katayama, Hiroshi Uchida, Takanori Kiguchi, Akihiro Akama, Toyohiko Konno, Osami Sakata. Orientation Controlled HfO2-Based Ferroelectric Films Prepared by Solid Phase Local Epitaxial Technique for High Density Memory Applications, 2016 MRS Fall Meeting & Exhibit, Nov. 2016.
• Takao Shimizu, Kiliha Katayama, Takanori Mimura, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Osami Sakata, Hiroshi Funakubo. Epitaxial Growth of Ferroelectric HfO2-based films, ICTAM-AFM10 (International Conference on Technologically Advanced Materials & Asian Meeting on Ferroelectricity), Nov. 2016.
• Z. Chen, Y. Hiranaga, T. Shimizu, K. Katayama, T. Mimura, H. Funakubo, Y. Cho. Ferroelectric nanodomain observation in yttrium-doped HfO2 using scanning nonlinear dielectric microscopy, ISAF/ECAPD/PFM 2016 (2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Applications of Polar Dielectrics & Workshop on Piezoresponse Force Microscopy), Aug. 2016.
• T. Sato, T. Kiguchi, T.J. Konno, J. Kimura, D. Ichinose, T. Mimura, H. Funakubo, K. Uchiyama. Growth of {110}-oriented Perovskite-type Proton Conductive Oxide Thin Films by RF Magnetron Sputtering Method, ICCGE-18 (The 18th International Conference on Crystal Growth and Epitaxy), Aug. 2016.
• Takao Shimizu, Kiliha Katayama, Takanori Mimura, Takanori Kiguchi, Takahisa Shiraishi, Akihiro Akama, Toyohiko J. Konno, Osami Sakata, Hiroshi Funakubo. Ferroelectricity in epitaxial and well-oriented texutured Y-doped HfO2 films, KJCFE 11th (11th Korea-Japan Conference on Ferroelectrics), Aug. 2016.
• Hiroshi Funakubo, Takanori Mimura, Kiriha Katayama, Takao Shimizu, Hiroshi Uchida, Takanori Kiguchi, Akihiro Akama, Toyohiko Konno, Osami Sakata. Growth of Orientation-Controlled Ferroelectric HfO2 Thin Films for Next Generation Ferroelectric Devices, ISCSI-Ⅶ/ISTDM 2016, June 2016.
• Takanori Mimura, Kiriha Katayama, Takao Shimizu, Hiroshi Uchida, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Osami Sakata, Hiroshi Funakubo. Growth of orientation-controlled ferroelectric HfO2 thin films by solid phase crystallization and their characterization, 2016 Joint RCBJSF-IWRF Conference, June 2016.

国内会議発表 (査読なし・不明)

• 野口雄貴, 三村和仙, 清水荘雄, 舟窪浩, 平永良臣. 局所C-Vマッピングと圧電応答顕微鏡の統合計測システムの開発, 第71回応用物理学会春季学術講演会, Mar. 2024.
• 平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄. 局所C-Vマップの画像処理に基づくナノスケール強誘電分極反転ダイナミクスの解析, 第71回応用物理学会春季学術講演会, Mar. 2024.
• 前川芳輝, 三村和仙, 稲熊宜之, 岡本一輝, 舟窪浩. Ta添加HfO2薄膜の合成と強誘電性評価, 第62回セラミックス基礎科学討論会, Jan. 2024.
• 平永良臣, 野口雄貴, 三村和仙, 清水荘雄, 舟窪浩, 長康雄. 局所C-V マッピング法を用いたグレイン境界と強誘電分極反転挙動の関係に関する解析, 第40回強誘電体会議（FMA40）, May 2023.
• 平永良臣, 野口雄貴, 三村和仙, 清水荘雄, 舟窪浩, 長康雄. 局所C-Vマップの機械学習解析に基づくグレイン境界と強誘電ドメイン挙動の相関に関する統計的評価, 第70回応用物理学会春季学術講演会, Mar. 2023.
• 平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄. 局所C-Vマッピング法による強誘電体薄膜のナノスケール分極反転ダイナミクスのクラスタ解析, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄. 局所C-V 曲線の非対称性に関するナノスケールマッピング, 第39回強誘電体応用会議（FMA39）, June 2022.
• 三村和仙, 清水荘雄, 坂田修身, 舟窪浩. HfO2基強誘電体の相転移における熱履歴, 日本物理学会第77回年次大会, Mar. 2022.
• 清水荘雄, 田代裕貴, 三村和仙, 舟窪浩. Y-置換HfO2基材料の強誘電性の発現, 日本セラミックス協会第34回秋季シンポジウム, Sept. 2021.
• 高橋雄真, 白石貴久, 小寺正徳, 志村礼司郎, 三村和仙, 森分博紀, 田口綾子, 舟窪浩. HfO2基強誘電体膜のラマン分光測定, 第82回応用物理学会秋季学術講演会, Sept. 2021.
• 平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄. 局所C-Vマッピングにおける主成分分析によるノイズ除去, 第82回応用物理学会秋季学術講演会, Sept. 2021.
• 平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄. 局所C-V曲線で観るナノスケール強誘電分極反転挙動, 第38回強誘電体会議（FMA 38）, June 2021.
• 志村礼司郎, 三村和仙, 舘山明紀, 清水荘雄, 白石貴久, 舟窪浩. スパッタリング法によるY-HZO強誘電体厚膜の室温製膜とその電気特性および圧電特性評価, 第68回応用物理学会春季学術講演会, Mar. 2021.
• 平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄. 強誘電体膜における分極反転挙動のナノスケールマッピング, 第68回応用物理学会春季学術講演会, Mar. 2021.
• 清水荘雄, 江原祥隆, 三村和仙, 安井伸太郎, 山田智明, 今井康彦, 坂田修身, 舟窪浩. 時間分解XRD測定による周期電界下における菱面体PZTの(111)/(-111)ドメイン構造の観察, 第14回物性科学領域横断研究会（領域合同研究会）, Dec. 2020.
• 清水荘雄, 田代裕貴, 三村和仙, 舟窪浩. HfO2基材料における強誘電相生成機構, 第40回電子材料研究討論会, Nov. 2020.
• 志村礼司郎, 三村和仙, 舘山明紀, 清水荘雄, 舟窪浩. スパッタリング法によるHfO2基強誘電体厚膜のシリコン基板上への室温製膜とその電気特性および圧電特性評価, 第81回応用物理学会秋季学術講演会, Sept. 2020.
• 志村礼司郎, 三村和仙, 舘山明紀, 清水荘雄, 舟窪浩. スパッタリング法によるHfO2基強誘電体厚膜の室温製膜とその電気特性評価, 第67回応用物理学会春季学術講演会, Mar. 2020.
• 三村和仙, 清水荘雄, 舟窪浩. エピタキシャルHfO2基膜を用いた直方晶相安定化の調査, 第67回応用物理学会春季学術講演会, Mar. 2020.
• 清水荘雄, 三村和仙, 舟窪浩. HfO2基強誘電体の相安定性と厚膜化, 第4回元素戦略シンポジウム―産学連携研究新展開―, Feb. 2020.
• 田代裕貴, 三村和仙, 清水荘雄, 勝矢良雄, 坂田修身, 木口賢紀, 白石貴久, 今野豊彦, 舟窪浩. HfO2基薄膜のZr, Yドープによる結晶相変化と強誘電相の安定性, 第58回セラミックス基礎科学討論会, Jan. 2020.
• 志村礼司郎, 三村和仙, 清水荘雄, 舟窪浩. スパッタリング法を用いたY:HfO2強誘電体厚膜の作製とその電気特性評価, 第39回電子材料研究討論会, Nov. 2019.
• 三村和仙, 清水荘雄, 舟窪浩. スパッタリング法を用いたY: HfO2強誘電体膜の室温成膜, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 田代裕貴, 三村和仙, 清水荘雄, 勝矢良雄, 坂田修身, 木口賢紀, 白石貴久, 今野豊彦, 舟窪浩. HfO2基薄膜の電界誘起相転移, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 木口賢紀, 白石貴久, 三村和仙, 清水荘雄, 舟窪浩, 今野豊彦. STEM-EELS法によるHfO2薄膜の結晶相・配向性の評価, 日本顕微鏡学会第75回学術講演会, June 2019.
• 木口賢紀, 白石貴久, 三村和仙, 清水荘雄, 舟窪浩, 今野豊彦. 直方晶相ハフニア薄膜におけるドメイン構造, 日本セラミックス協会2019年年会, Mar. 2019.
• 志村礼司郎, 三村和仙, 清水荘雄, 舟窪浩. スパッタリング法により配向制御したHfO2基強誘電体厚膜の作製およびその電気特性評価, 第66回応用物理学会春季学術講演会, Mar. 2019.
• 田代裕貴, 三村和仙, 清水荘雄, 舟窪浩. PLD法を用いたY, ZrドープHfO2薄膜の作製と評価, 第66回応用物理学会春季学術講演会, Mar. 2019.
• 田代裕貴, 三村和仙, 清水荘雄, 舟窪浩. PLD法を用いたY, ZrドープHfO2薄膜の作製と評価, 第57回セラミックス基礎科学討論会, Jan. 2019.
• 清水荘雄, 三村和仙, 舟窪浩. HfO2基薄膜の相安定性と機能発現, 第57回セラミックス基礎討論会, Jan. 2019.
• 清水荘雄, 三村和仙, 舟窪浩. HfO2基強誘電体厚膜の作製と電気特性制御, 2018年度セラミックス総合研究会, Nov. 2018.
• 木口賢紀, 白石貴久, 三村和仙, 清水荘雄, 舟窪浩, 今野豊彦. S T E M - E E L S 法による直方晶相ハフニア薄膜の結晶構造評価, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 志村礼司郎, 三村和仙, 清水荘雄, 舟窪浩. スパッタリング法によるHfO2基強誘電体の厚膜化とその電気特性評価, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 清水荘雄, 江原祥隆, 三村和仙, 安井伸太郎, 山田智明, 今井康彦, 勝矢良雄, 坂田修身, 舟窪浩. 時間分解放射光X線回折を用いた菱面体晶 PZTにおける非180˚ドメインスイッチングの周波数応答 特性の評価, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 木口賢紀, 崔瓍珍, 白石貴久, 三村和仙, 清水荘雄, 舟窪浩, 今野豊彦. 直方晶相ハフニア薄膜のドメイン構造の電子エネルギー損失分光, 日本セラミックス協会 第31回秋季シンポジウム, Sept. 2018.
• 舟窪浩, 清水荘雄, 三村和仙. HfO2基強誘電体の相安定性と特性制御, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• T. Shimizu, T. Mimura, T. Kiguchi, A. Akama, T. J. Konno, Y. Katsuya, O. Sakata, H. Funakubo. Domain Structure and Electric Field Induced Domain Switching in HfO2 Ferroelectrics, IFAAP 2018 (2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference), May 2018.
• 三村和仙, 清水荘雄, 勝矢良雄, 坂田修身, 舟窪浩. エピタキシャルHfO2基強誘電体における強誘電特性の膜厚依存性, 第65回応用物理学会春季学術講演会, Mar. 2018.
• 伊藤翔陽, 難波諒太郎, 三村和仙, 金子智, 舟窪浩, 松田晃史, 吉本護. 一軸加圧下熱処理によるBi₂VO_5+δ薄膜の配向性固相結晶化と特性評価, 2018年 第65回 応用物理学会春季学術講演会, Mar. 2018.  公式リンク  
  
• 三村和仙, 清水荘雄, 木口賢紀, 赤間章裕, 今野豊彦, 勝矢良雄, 坂田修身, 舟窪浩. エピタキシャル成長したHfO2 基強誘電体膜における結晶構造の膜厚依存性, 日本セラミックス協会 2018年年会, Mar. 2018.
• 清水荘雄, 三村和仙, 木口賢紀, 白石貴久, 赤間章裕, 今野豊彦, 坂田修身, 勝矢良雄, 舟窪浩. HfO2基強誘電体のドメイン構造と電場誘起スイッチング, 第37回エレクトロセラミックス研究討論会, Oct. 2017.
• 清水荘雄, 三村和仙, 木口賢紀, 赤間章裕, 今野豊彦, 坂田修身, 舟窪浩. HfO2基材料における強誘電相発現要因の検討, 日本セラミックス協会第30回秋季シンポジウム, Sept. 2017.
• 山田智明, 松尾翔吾, 加茂崇史, 三村和仙, 清水荘雄, 舟窪浩, 吉野正人, 長崎正雅. ペロブスカイト型および蛍石型強誘電体薄膜の電気熱量効果, 2017年強的秩序とその操作に関する第5回研究会, Sept. 2017.
• 三村和仙, 清水荘雄, 木口賢紀, 赤間章裕, 今野豊彦, 勝矢良雄, 坂田修身, 舟窪浩. Y2O3-HfO2強誘電体の温度安定性, 第78回応用物理学会秋季学術講演会, Sept. 2017.
• 鈴木大生, 三村和仙, 清水荘雄, 内田寛, 舟窪浩. スパッタリング法による{100}配向Y2O3-HfO2強誘電体エピタキシャル薄膜の作製とその評価, 第78回応用物理学会秋季学術講演会, Sept. 2017.
• 佐藤智也, 一ノ瀬大地, 三村和仙, 清水荘雄, 山田智明, 舟窪浩. エピタキシャルPZT膜におけるマルチドメイン構造と面内歪の緩和, 第78回応用物理学会秋季学術講演会, Sept. 2017.
• 松尾翔吾, 山田智明, 三村和仙, 清水荘雄, 舟窪浩, 吉野正人, 長崎正雅. Y添加HfO2エピタキシャル薄膜における負の電気熱量効果, 第78回応用物理学会秋季学術講演会, Sept. 2017.
• 平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄. 強誘電性HfO2薄膜におけるナノスケール分極反転ドット書き込み, 第78回応用物理学会秋季学術講演会, Sept. 2017.
• 舟窪浩, 清水荘雄, 三村和仙. HfO2基強誘電体の相安定性とその特性制御, 2017年度セラミックス総合研究会, Sept. 2017.
• 清水荘雄, 三村和仙, 舟窪浩. HfO2基強誘電体エピタキシャル薄膜研究の最近の進展, 第34回強誘電体応用会議（FMA34）, May 2017.
• 平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄. SNDMによる分極反転過程の動的観察, 第34回強誘電体応用会議（FMA34）, May 2017.
• 佐藤智也, 一ノ瀬大地, 三村和仙, 根本祐一, 清水荘雄, 今井康彦, 内田寛, 坂田修身, 舟窪浩. 電界印加下における正方晶Pb(Zr,Ti)O3膜の結晶構造の時間応答, 第64回応用物理学会春季学術講演会, Mar. 2017.
• 三村和仙, 片山きりは, 清水荘雄, 木口賢紀, 赤間章裕, 今野豊彦, 坂田修身, 舟窪浩. エピタキシャルHfO2基膜における強誘電相の安定性 -RE2O3-HfO2 vs ZrO2-HfO2-, 第64回応用物理学会春季学術講演会, Mar. 2017.
• 鈴木大生, 三村和仙, 清水荘雄, 内田寛, 舟窪浩. スパッタリング法によるY2O3-HfO2強誘電体エピタキシャル薄膜作製とその評価, 第64回応用物理学会春季学術講演会, Mar. 2017.
• 平永良臣, 三村和仙, 清水 荘雄, 舟窪浩, 長康雄. 走査型非線形誘電率顕微鏡を用いたナノスケール分極反転過程の動的観察, 第64回応用物理学会春季学術講演会, Mar. 2017.
• 鈴木大生, 三村和仙, 清水荘雄, 内田寛, 舟窪浩. Y2O3-HfO2エピタキシャル薄膜の構成相の決定因子, 第55回セラミックス協会基礎科学討論会, Jan. 2017.
• 平永良臣, 長康雄, 三村和仙, 清水荘雄, 舟窪浩. Y添加HfO2薄膜における強誘電ドメイン反転のSNDM観察, 電子情報通信学会 磁気記録・情報ストレージ研究会（MR）, Dec. 2016.
• 三村和仙, 清水荘雄, 内田寛, 木口賢紀, 赤間章裕, 今野豊彦, 坂田修身, 舟窪 浩. HfO2基強誘電体の結晶構造と特性の熱処理温度依存性, 第77回応用物理学会秋季学術講演会, Sept. 2016.
• 清水荘雄, 三村和仙, 片山きりは, 木口賢紀, 赤間章裕, 今野豊彦, 坂田修身, 舟窪浩. 電界印加によるYO1.5-HfO2基薄膜の結晶構造変化, 第77回応用物理学会秋季学術講演会, Sept. 2016.
• 清水荘雄, 片山きりは, 三村和仙, 木口賢紀, 白石貴久, 赤間章裕, 今野豊彦, 坂田修身, 舟窪浩. エピタキシャルおよび配向性YドープHfO₂薄膜の強誘電性, 日本セラミックス協会第29回秋季シンポジウム, Sept. 2016.
• 三村和仙, 舟窪浩. ポストアニール法による配向制御したHfO2基強誘電体の作成とその特性評価, 新学術領域研究「ナノ構造情報のフロンティア開拓―材料科学の新展開」第4回若手の会, July 2016.
• 舟窪 浩, 清水荘雄, 片山きりは, 三村和仙. 配向制御したHfO2基強誘電体薄膜の作製と特性評価, 応用物理学会シリコンテクノロジー分科会 第192回研究集会, June 2016.
• 内山潔, 佐藤智也, 一ノ瀬大地, 木村純一, 井上貴明, 三村和仙, 舟窪浩. Pt/Si基板上への{110}高配向ぺロブスカイト薄膜の直接成膜, 第33回強誘電体応用会議（FMA33）, May 2016.
• 舟窪浩, 清水荘雄, 片山きりは, 三村和仙, 木口賢紀, 赤間章裕, 今野豊彦, 内田寛. 配向制御したHfO2基強誘電体の作製とその強誘電特性評価, 日本セラミックス協会 2016年年会, Mar. 2016.
• 三村和仙, 片山きりは, 清水荘雄, 内田 寛, 木口賢紀, 赤間章裕, 今野豊彦, 坂田修身, 舟窪 浩. 固相成長による配向制御したHfO2基強誘電体薄膜の作製と特性評価, 第63回応用物理学会春季学術講演会, Mar. 2016.
• 佐藤智也, 木村純一, 一ノ瀬大地, 三村和仙, 舟窪 浩, 内山 潔. {110}一軸配向ペロブスカイト型酸化物薄膜の作製と結晶構造解析, 第63回応用物理学会春季学術講演会, Mar. 2016.
• 陳 舟, 平永良臣, 清水荘雄, 片山きりは, 三村和仙, 舟窪 浩, 長 康雄. 走査型非線形誘電率顕微鏡における強誘電性Y:HfO2薄膜のドメイン反転, 第63回応用物理学会春季学術講演会, Mar. 2016.
• 三村和仙, 片山きりは, 清水荘雄, 舟窪浩, 内田寛, 木口賢紀, 赤間章裕, 今野豊彦. 固相成長法を用いた強誘電体HfO2 基薄膜のエピタキシャル成長と特性評価, 第54回セラミックス基礎科学討論会, Jan. 2016.
• 陳舟, 平永良臣, 清水荘雄, 片山きりは, 三村和仙, 舟窪浩, 長康雄. 強誘電性Y:HfO2薄膜におけるナノスケールドメイン反転, 電子情報通信学会研究会, 2016.

その他の論文・著書など

• 清水 荘雄, 三村 和仙, 舟窪 浩. HfO2基材料における強誘電性の発現機構, セラミックス, Vol. 56, No. 7, pp. 455-458, July 2021.
• 三村和仙, 志村礼司郎, 舟窪浩, 清水荘雄. HfO2およびZrO2基強誘電体膜の厚膜化と室温合成, 超音波TECHNO, 2020年9-10号, 41-45, Sept. 2020.
• 三村和仙, 清水荘雄, 舟窪浩. 蛍石構造強誘電体薄膜の組成による結晶構造変化の観察, 文部科学省ナノテクノロジープラットフォーム事業 微細構造解析プラットフォーム 利用報告書 実施機関 国立大学法人 東北大学, 平成30年度, A-18-TU-0042, Sept. 2019.

特許など

• 舟窪浩, 清水荘雄, 三村和仙, 中村　美子, 志村　礼司郎, 田代裕貴. 強誘電性膜の製造方法、強誘電性膜、及びその用途. 特許. 公開. 国立大学法人東京工業大学. 2020/04/27. PCT/JP2020/018031. 2020/10/29. WO 2020/218617. 2020.
• 舟窪浩, 清水荘雄, 三村和仙, 志村　礼司郎, 井上　ゆか梨, 佐藤　祐介. 強誘電性薄膜、強誘電性薄膜素子、圧電アクチュエータ、圧電センサ、ヘッドアセンブリ、ヘッドスタックアセンブリ、ハードディスクドライブ、プリンタヘッド、及びインクジェットプリンタ装置. 特許. 登録. 国立大学法人東京工業大学, ＴＤＫ株式会社. 2018/08/31. 特願2018-163377. 2020/03/05. 特開2020-033629. 特許第7061752号. 2022/04/21 2022.
• 清水荘雄, 舟窪浩, 片山きりは, 三村和仙. 強誘電性薄膜、電子素子及び製造方法. 特許. 登録. 国立大学法人東京工業大学. 2015/08/28. 特願2016-545654. 2017/06/15. 再表2016/031986. 特許第6661197号. 2020/02/14 2020.

学位論文

• A study on stabilization of ferroelectric phase in epitaxial HfO2 - based films,  Exam Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2020/03/26,   
• A study on stabilization of ferroelectric phase in epitaxial HfO2 - based films,  Thesis,  Doctor (Engineering),  Tokyo Institute of Technology,  2020/03/26, 
• エピタキシャル成長したHfO2基薄膜を用いた強誘電相出現に関する研究,  要約,  博士(工学),  東京工業大学,  2020/03/26,   
• エピタキシャル成長したHfO2基薄膜を用いた強誘電相出現に関する研究,  論文要旨,  博士(工学),  東京工業大学,  2020/03/26,   

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